Variable Inductors in CMOS for Millimeter-Wave Applications
Transformer-based variable inductors usable up to ~77 GHz are demonstrated. Measured inductance of two variable inductors can be tuned from 56.5 to 67 pH and from 55.7 to 61.9 pH at 77 GHz. The bandwidth Q is greater than ten at 77 GHz. This is higher than that of typical Q of ~4 for MOS varactors w...
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| Veröffentlicht in: | IEEE electron device letters 2012-07, Vol.33 (7), p.1081-1083 |
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| container_title | IEEE electron device letters |
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| creator | Yang-Hun Yun Kao, Te-Yu J. Kenneth, K. O. |
| description | Transformer-based variable inductors usable up to ~77 GHz are demonstrated. Measured inductance of two variable inductors can be tuned from 56.5 to 67 pH and from 55.7 to 61.9 pH at 77 GHz. The bandwidth Q is greater than ten at 77 GHz. This is higher than that of typical Q of ~4 for MOS varactors which is an alternate tunable element. This indicates that variable inductors with useful tuning range and sufficiently high Q can be realized in CMOS for use in millimeter-wave circuits. |
| doi_str_mv | 10.1109/LED.2012.2196966 |
| format | Article |
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O.</creator><creatorcontrib>Yang-Hun Yun ; Kao, Te-Yu J. ; Kenneth, K. O.</creatorcontrib><description>Transformer-based variable inductors usable up to ~77 GHz are demonstrated. Measured inductance of two variable inductors can be tuned from 56.5 to 67 pH and from 55.7 to 61.9 pH at 77 GHz. The bandwidth Q is greater than ten at 77 GHz. This is higher than that of typical Q of ~4 for MOS varactors which is an alternate tunable element. This indicates that variable inductors with useful tuning range and sufficiently high Q can be realized in CMOS for use in millimeter-wave circuits.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2012.2196966</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Circuit properties ; CMOS ; CMOS integrated circuits ; Design. Technologies. Operation analysis. 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Testing</subject><subject>Diodes</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Frequency measurement</subject><subject>Inductance</subject><subject>Inductors</subject><subject>Integrated circuits</subject><subject>Magnetic devices</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>millimeter wave</subject><subject>Resistance</subject><subject>Resonant frequency</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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O.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20120701</creationdate><title>Variable Inductors in CMOS for Millimeter-Wave Applications</title><author>Yang-Hun Yun ; Kao, Te-Yu J. ; Kenneth, K. O.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c293t-76ada6fe743b25f4c74a687a3cab458b0b3d07350e5ce64114e7293196b239343</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Applied sciences</topic><topic>Circuit properties</topic><topic>CMOS</topic><topic>CMOS integrated circuits</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Diodes</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Frequency measurement</topic><topic>Inductance</topic><topic>Inductors</topic><topic>Integrated circuits</topic><topic>Magnetic devices</topic><topic>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</topic><topic>millimeter wave</topic><topic>Resistance</topic><topic>Resonant frequency</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Varactors</topic><topic>variable inductor</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yang-Hun Yun</creatorcontrib><creatorcontrib>Kao, Te-Yu J.</creatorcontrib><creatorcontrib>Kenneth, K. 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O.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Variable Inductors in CMOS for Millimeter-Wave Applications</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2012-07-01</date><risdate>2012</risdate><volume>33</volume><issue>7</issue><spage>1081</spage><epage>1083</epage><pages>1081-1083</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Transformer-based variable inductors usable up to ~77 GHz are demonstrated. Measured inductance of two variable inductors can be tuned from 56.5 to 67 pH and from 55.7 to 61.9 pH at 77 GHz. The bandwidth Q is greater than ten at 77 GHz. This is higher than that of typical Q of ~4 for MOS varactors which is an alternate tunable element. 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| ispartof | IEEE electron device letters, 2012-07, Vol.33 (7), p.1081-1083 |
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| source | IEEE Xplore |
| subjects | Applied sciences Circuit properties CMOS CMOS integrated circuits Design. Technologies. Operation analysis. Testing Diodes Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Frequency measurement Inductance Inductors Integrated circuits Magnetic devices Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits millimeter wave Resistance Resonant frequency Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Varactors variable inductor |
| title | Variable Inductors in CMOS for Millimeter-Wave Applications |
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