Variable Inductors in CMOS for Millimeter-Wave Applications

Transformer-based variable inductors usable up to ~77 GHz are demonstrated. Measured inductance of two variable inductors can be tuned from 56.5 to 67 pH and from 55.7 to 61.9 pH at 77 GHz. The bandwidth Q is greater than ten at 77 GHz. This is higher than that of typical Q of ~4 for MOS varactors w...

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Veröffentlicht in:	IEEE electron device letters 2012-07, Vol.33 (7), p.1081-1083
Hauptverfasser:	Yang-Hun Yun, Kao, Te-Yu J., Kenneth, K. O.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Circuit properties CMOS CMOS integrated circuits Design. Technologies. Operation analysis. Testing Diodes Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Frequency measurement Inductance Inductors Integrated circuits Magnetic devices Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits millimeter wave Resistance Resonant frequency Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Varactors variable inductor
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Beschreibung
Zusammenfassung:	Transformer-based variable inductors usable up to ~77 GHz are demonstrated. Measured inductance of two variable inductors can be tuned from 56.5 to 67 pH and from 55.7 to 61.9 pH at 77 GHz. The bandwidth Q is greater than ten at 77 GHz. This is higher than that of typical Q of ~4 for MOS varactors which is an alternate tunable element. This indicates that variable inductors with useful tuning range and sufficiently high Q can be realized in CMOS for use in millimeter-wave circuits.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2012.2196966