Experimental investigation and manufacturing solution of the rapid thermal process induced overlay residue

Experimental investigation for rapid thermal process (RTP) induced overlay residue was conducted. Silicon wafer substrate played a critical part in the RTP induced overlay residue. Substrates with epitaxial layers showed better overlay performance. High device densities tended to show worse overlay...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Weihua Tong, Kim, R., Krishnan, B., Sung Kim, Vatel, O., Xuli Liu, Lei Huang, Suresh, K., Miowchin Tan, Srinivasan, V., Benyon, P.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	aspect ratio overlay Oxidation pattern density Probes rapid thermal process shallow trench isolation Silicon Stress substrate Substrates Temperature control Temperature measurement
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