Carbonized surface curing for etch-back process

For flash memory below the 63nm node, two step Undoped Silicon Glass (USG) deposition and one step etch-back processes are applied in manufacturing processes to get good gap fill properties for Shallow Trench Isolation (STI) structures. The characteristics of the silicon surface after an etch-back p...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Sungjin Jang, In-cheol Kim, Kyu-yeol Lee, Soo-cheol Lee, In-soo Cho, Byoung-deog Choi
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Additives Carbon Etch-back Sensitivity Silicon Silicon Substrate Pit failure Stability analysis Substrates Surface sensitivity Surface treatment TEOS (Tetraethyl Orthosilicate) Under-layer dependency USG (Undoped Silicon Glass)
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