Carbonized surface curing for etch-back process
For flash memory below the 63nm node, two step Undoped Silicon Glass (USG) deposition and one step etch-back processes are applied in manufacturing processes to get good gap fill properties for Shallow Trench Isolation (STI) structures. The characteristics of the silicon surface after an etch-back p...
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| creator | Sungjin Jang In-cheol Kim Kyu-yeol Lee Soo-cheol Lee In-soo Cho Byoung-deog Choi |
| description | For flash memory below the 63nm node, two step Undoped Silicon Glass (USG) deposition and one step etch-back processes are applied in manufacturing processes to get good gap fill properties for Shallow Trench Isolation (STI) structures. The characteristics of the silicon surface after an etch-back process influences the following second USG deposition thickness and variation because the USG deposition process has high under-layer dependency and surface sensitivity. It can be reduced by changing some parameters during the deposition process like O 3 -TEOS ratio or temperature or pressure, but these methods also change the gap fill property and deposition rate [1]. So, we should find another method. This paper presents the detail studies of surface characteristics during processes that have been carried out to optimize the USG etch-back process. |
| doi_str_mv | 10.1109/ASMC.2012.6212891 |
| format | Conference Proceeding |
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This paper presents the detail studies of surface characteristics during processes that have been carried out to optimize the USG etch-back process.</description><subject>Additives</subject><subject>Carbon</subject><subject>Etch-back</subject><subject>Sensitivity</subject><subject>Silicon</subject><subject>Silicon Substrate Pit failure</subject><subject>Stability analysis</subject><subject>Substrates</subject><subject>Surface sensitivity</subject><subject>Surface treatment</subject><subject>TEOS (Tetraethyl Orthosilicate)</subject><subject>Under-layer dependency</subject><subject>USG (Undoped Silicon Glass)</subject><issn>1078-8743</issn><issn>2376-6697</issn><isbn>146730350X</isbn><isbn>9781467303507</isbn><isbn>1467303518</isbn><isbn>9781467303514</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2012</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpFj8tKAzEYRuMNnFYfQNzMC2SaP7c_WZbBqlBxoYK7kmQSjZdOSdqFPr2CBVff4hwOfIRcAOsAmJ3NH-76jjPgnebAjYUDMgGpUTChwByShgvUVGuLR_-APR-TBhgaalCKUzKp9Y0xpq2Bhsx6V_y4zt9xaOuuJBdiG3Ylr1_aNJY2bsMr9S68t5syhljrGTlJ7qPG8_1OydPi6rG_ocv769t-vqQZUG1pTE5F77kcpE-My8Slg4jWBkSZlIgxcusNCkhepOAVUzyJhGDE4CRHMSWXf938q642JX-68rXavxY_GhxHHQ</recordid><startdate>201205</startdate><enddate>201205</enddate><creator>Sungjin Jang</creator><creator>In-cheol Kim</creator><creator>Kyu-yeol Lee</creator><creator>Soo-cheol Lee</creator><creator>In-soo Cho</creator><creator>Byoung-deog Choi</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201205</creationdate><title>Carbonized surface curing for etch-back process</title><author>Sungjin Jang ; In-cheol Kim ; Kyu-yeol Lee ; Soo-cheol Lee ; In-soo Cho ; Byoung-deog Choi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-efa5ebb24d4bf024f24a1e799c774f53eee29b8731fb3fcb5052f3f7183da4273</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Additives</topic><topic>Carbon</topic><topic>Etch-back</topic><topic>Sensitivity</topic><topic>Silicon</topic><topic>Silicon Substrate Pit failure</topic><topic>Stability analysis</topic><topic>Substrates</topic><topic>Surface sensitivity</topic><topic>Surface treatment</topic><topic>TEOS (Tetraethyl Orthosilicate)</topic><topic>Under-layer dependency</topic><topic>USG (Undoped Silicon Glass)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sungjin Jang</creatorcontrib><creatorcontrib>In-cheol Kim</creatorcontrib><creatorcontrib>Kyu-yeol Lee</creatorcontrib><creatorcontrib>Soo-cheol Lee</creatorcontrib><creatorcontrib>In-soo Cho</creatorcontrib><creatorcontrib>Byoung-deog Choi</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sungjin Jang</au><au>In-cheol Kim</au><au>Kyu-yeol Lee</au><au>Soo-cheol Lee</au><au>In-soo Cho</au><au>Byoung-deog Choi</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Carbonized surface curing for etch-back process</atitle><btitle>2012 SEMI Advanced Semiconductor Manufacturing Conference</btitle><stitle>ASMC</stitle><date>2012-05</date><risdate>2012</risdate><spage>214</spage><epage>215</epage><pages>214-215</pages><issn>1078-8743</issn><eissn>2376-6697</eissn><isbn>146730350X</isbn><isbn>9781467303507</isbn><eisbn>1467303518</eisbn><eisbn>9781467303514</eisbn><abstract>For flash memory below the 63nm node, two step Undoped Silicon Glass (USG) deposition and one step etch-back processes are applied in manufacturing processes to get good gap fill properties for Shallow Trench Isolation (STI) structures. The characteristics of the silicon surface after an etch-back process influences the following second USG deposition thickness and variation because the USG deposition process has high under-layer dependency and surface sensitivity. It can be reduced by changing some parameters during the deposition process like O 3 -TEOS ratio or temperature or pressure, but these methods also change the gap fill property and deposition rate [1]. So, we should find another method. This paper presents the detail studies of surface characteristics during processes that have been carried out to optimize the USG etch-back process.</abstract><pub>IEEE</pub><doi>10.1109/ASMC.2012.6212891</doi><tpages>2</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1078-8743 |
| ispartof | 2012 SEMI Advanced Semiconductor Manufacturing Conference, 2012, p.214-215 |
| issn | 1078-8743 2376-6697 |
| language | eng |
| recordid | cdi_ieee_primary_6212891 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Additives Carbon Etch-back Sensitivity Silicon Silicon Substrate Pit failure Stability analysis Substrates Surface sensitivity Surface treatment TEOS (Tetraethyl Orthosilicate) Under-layer dependency USG (Undoped Silicon Glass) |
| title | Carbonized surface curing for etch-back process |
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