Applications of site-specific scanning spreading resistance microscopy (SSRM) to failure analysis of production lines
Much attention has been paid to the site-specific scanning spreading resistance microscopy (SSRM) for visualizing impurity-diffusion layers because of its capability of failure analysis as well as analyzing scaled LSI devices. We report applications of the site-specific SSRM to failure analysis in L...
Gespeichert in:
| Hauptverfasser: | , , , , , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 149 |
|---|---|
| container_issue | |
| container_start_page | 146 |
| container_title | |
| container_volume | |
| creator | Hayase, Y. Hara, K. Ogata, S. Li Zhang Akutsu, H. Kurihara, M. Norimatsu, K. Nagamine, S. |
| description | Much attention has been paid to the site-specific scanning spreading resistance microscopy (SSRM) for visualizing impurity-diffusion layers because of its capability of failure analysis as well as analyzing scaled LSI devices. We report applications of the site-specific SSRM to failure analysis in LSI production lines for the first time. SSRM is shown to be capable of observing no implantation areas with high spatial resolution by combining with defect localization techniques. The combination of the site-specific SSRM with multiple failure analysis techniques in addition to design and process information has been demonstrated to be a powerful tool to find root causes in a short period. |
| doi_str_mv | 10.1109/IWJT.2012.6212830 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_6212830</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6212830</ieee_id><sourcerecordid>6212830</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-6c15d6d5c56753dc6e7128b21d623233eed370235757c116dd274591ab29c9a73</originalsourceid><addsrcrecordid>eNo1UE1LAzEUjIig1v0B4iVHPWzNxyZpjqX4UakItuCxpMlbebLNhmR76L-3xfouMwPDDPMIueVszDmzj_Ovt9VYMC7GWnAxkeyMVNZMeKON5EJpfk6u_8WkuSRVKT_scIZJY9UV2U1T6tC7AftYaN_SggPUJYHHFj0t3sWI8ZuWlMGFI8tQsAwueqBb9Lkvvk97er9cfr4_0KGnrcNul4G66Lr9wXoMTbkPO3_soB1GKDfkonVdgeqEI7J6flrNXuvFx8t8Nl3UaNlQa89V0EF5pY2SwWswh4kbwYMWUkgJEKRhQiqjjOdchyBMoyx3G2G9dUaOyN1fLALAOmXcurxfnx4lfwHnX11j</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Applications of site-specific scanning spreading resistance microscopy (SSRM) to failure analysis of production lines</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Hayase, Y. ; Hara, K. ; Ogata, S. ; Li Zhang ; Akutsu, H. ; Kurihara, M. ; Norimatsu, K. ; Nagamine, S.</creator><creatorcontrib>Hayase, Y. ; Hara, K. ; Ogata, S. ; Li Zhang ; Akutsu, H. ; Kurihara, M. ; Norimatsu, K. ; Nagamine, S.</creatorcontrib><description>Much attention has been paid to the site-specific scanning spreading resistance microscopy (SSRM) for visualizing impurity-diffusion layers because of its capability of failure analysis as well as analyzing scaled LSI devices. We report applications of the site-specific SSRM to failure analysis in LSI production lines for the first time. SSRM is shown to be capable of observing no implantation areas with high spatial resolution by combining with defect localization techniques. The combination of the site-specific SSRM with multiple failure analysis techniques in addition to design and process information has been demonstrated to be a powerful tool to find root causes in a short period.</description><identifier>ISBN: 1467312584</identifier><identifier>ISBN: 9781467312585</identifier><identifier>EISBN: 9781467312561</identifier><identifier>EISBN: 1467312576</identifier><identifier>EISBN: 9781467312578</identifier><identifier>EISBN: 1467312568</identifier><identifier>DOI: 10.1109/IWJT.2012.6212830</identifier><language>eng</language><publisher>IEEE</publisher><subject>Abstracts ; carrier ; Companies ; Diffusion-layer visualization ; dopant ; Electrodes ; failure analysis ; impurity analysis ; LSI ; Metals ; Nanoscale devices ; PN junction ; SCM ; site-specific ; SSRM</subject><ispartof>2012 12th International Workshop on Junction Technology, 2012, p.146-149</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6212830$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6212830$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Hayase, Y.</creatorcontrib><creatorcontrib>Hara, K.</creatorcontrib><creatorcontrib>Ogata, S.</creatorcontrib><creatorcontrib>Li Zhang</creatorcontrib><creatorcontrib>Akutsu, H.</creatorcontrib><creatorcontrib>Kurihara, M.</creatorcontrib><creatorcontrib>Norimatsu, K.</creatorcontrib><creatorcontrib>Nagamine, S.</creatorcontrib><title>Applications of site-specific scanning spreading resistance microscopy (SSRM) to failure analysis of production lines</title><title>2012 12th International Workshop on Junction Technology</title><addtitle>IWJT</addtitle><description>Much attention has been paid to the site-specific scanning spreading resistance microscopy (SSRM) for visualizing impurity-diffusion layers because of its capability of failure analysis as well as analyzing scaled LSI devices. We report applications of the site-specific SSRM to failure analysis in LSI production lines for the first time. SSRM is shown to be capable of observing no implantation areas with high spatial resolution by combining with defect localization techniques. The combination of the site-specific SSRM with multiple failure analysis techniques in addition to design and process information has been demonstrated to be a powerful tool to find root causes in a short period.</description><subject>Abstracts</subject><subject>carrier</subject><subject>Companies</subject><subject>Diffusion-layer visualization</subject><subject>dopant</subject><subject>Electrodes</subject><subject>failure analysis</subject><subject>impurity analysis</subject><subject>LSI</subject><subject>Metals</subject><subject>Nanoscale devices</subject><subject>PN junction</subject><subject>SCM</subject><subject>site-specific</subject><subject>SSRM</subject><isbn>1467312584</isbn><isbn>9781467312585</isbn><isbn>9781467312561</isbn><isbn>1467312576</isbn><isbn>9781467312578</isbn><isbn>1467312568</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2012</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1UE1LAzEUjIig1v0B4iVHPWzNxyZpjqX4UakItuCxpMlbebLNhmR76L-3xfouMwPDDPMIueVszDmzj_Ovt9VYMC7GWnAxkeyMVNZMeKON5EJpfk6u_8WkuSRVKT_scIZJY9UV2U1T6tC7AftYaN_SggPUJYHHFj0t3sWI8ZuWlMGFI8tQsAwueqBb9Lkvvk97er9cfr4_0KGnrcNul4G66Lr9wXoMTbkPO3_soB1GKDfkonVdgeqEI7J6flrNXuvFx8t8Nl3UaNlQa89V0EF5pY2SwWswh4kbwYMWUkgJEKRhQiqjjOdchyBMoyx3G2G9dUaOyN1fLALAOmXcurxfnx4lfwHnX11j</recordid><startdate>201205</startdate><enddate>201205</enddate><creator>Hayase, Y.</creator><creator>Hara, K.</creator><creator>Ogata, S.</creator><creator>Li Zhang</creator><creator>Akutsu, H.</creator><creator>Kurihara, M.</creator><creator>Norimatsu, K.</creator><creator>Nagamine, S.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201205</creationdate><title>Applications of site-specific scanning spreading resistance microscopy (SSRM) to failure analysis of production lines</title><author>Hayase, Y. ; Hara, K. ; Ogata, S. ; Li Zhang ; Akutsu, H. ; Kurihara, M. ; Norimatsu, K. ; Nagamine, S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-6c15d6d5c56753dc6e7128b21d623233eed370235757c116dd274591ab29c9a73</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Abstracts</topic><topic>carrier</topic><topic>Companies</topic><topic>Diffusion-layer visualization</topic><topic>dopant</topic><topic>Electrodes</topic><topic>failure analysis</topic><topic>impurity analysis</topic><topic>LSI</topic><topic>Metals</topic><topic>Nanoscale devices</topic><topic>PN junction</topic><topic>SCM</topic><topic>site-specific</topic><topic>SSRM</topic><toplevel>online_resources</toplevel><creatorcontrib>Hayase, Y.</creatorcontrib><creatorcontrib>Hara, K.</creatorcontrib><creatorcontrib>Ogata, S.</creatorcontrib><creatorcontrib>Li Zhang</creatorcontrib><creatorcontrib>Akutsu, H.</creatorcontrib><creatorcontrib>Kurihara, M.</creatorcontrib><creatorcontrib>Norimatsu, K.</creatorcontrib><creatorcontrib>Nagamine, S.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hayase, Y.</au><au>Hara, K.</au><au>Ogata, S.</au><au>Li Zhang</au><au>Akutsu, H.</au><au>Kurihara, M.</au><au>Norimatsu, K.</au><au>Nagamine, S.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Applications of site-specific scanning spreading resistance microscopy (SSRM) to failure analysis of production lines</atitle><btitle>2012 12th International Workshop on Junction Technology</btitle><stitle>IWJT</stitle><date>2012-05</date><risdate>2012</risdate><spage>146</spage><epage>149</epage><pages>146-149</pages><isbn>1467312584</isbn><isbn>9781467312585</isbn><eisbn>9781467312561</eisbn><eisbn>1467312576</eisbn><eisbn>9781467312578</eisbn><eisbn>1467312568</eisbn><abstract>Much attention has been paid to the site-specific scanning spreading resistance microscopy (SSRM) for visualizing impurity-diffusion layers because of its capability of failure analysis as well as analyzing scaled LSI devices. We report applications of the site-specific SSRM to failure analysis in LSI production lines for the first time. SSRM is shown to be capable of observing no implantation areas with high spatial resolution by combining with defect localization techniques. The combination of the site-specific SSRM with multiple failure analysis techniques in addition to design and process information has been demonstrated to be a powerful tool to find root causes in a short period.</abstract><pub>IEEE</pub><doi>10.1109/IWJT.2012.6212830</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISBN: 1467312584 |
| ispartof | 2012 12th International Workshop on Junction Technology, 2012, p.146-149 |
| issn | |
| language | eng |
| recordid | cdi_ieee_primary_6212830 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Abstracts carrier Companies Diffusion-layer visualization dopant Electrodes failure analysis impurity analysis LSI Metals Nanoscale devices PN junction SCM site-specific SSRM |
| title | Applications of site-specific scanning spreading resistance microscopy (SSRM) to failure analysis of production lines |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-08T13%3A11%3A51IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Applications%20of%20site-specific%20scanning%20spreading%20resistance%20microscopy%20(SSRM)%20to%20failure%20analysis%20of%20production%20lines&rft.btitle=2012%2012th%20International%20Workshop%20on%20Junction%20Technology&rft.au=Hayase,%20Y.&rft.date=2012-05&rft.spage=146&rft.epage=149&rft.pages=146-149&rft.isbn=1467312584&rft.isbn_list=9781467312585&rft_id=info:doi/10.1109/IWJT.2012.6212830&rft_dat=%3Cieee_6IE%3E6212830%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=9781467312561&rft.eisbn_list=1467312576&rft.eisbn_list=9781467312578&rft.eisbn_list=1467312568&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=6212830&rfr_iscdi=true |