Enabling the use of ion implantation for ultra-thin FDSOI n-MOSFETs

Enabling the use of ion implantation for ultra-thin FDSOI n-MOSFETs

For the first time, we extensively review to which extent ion implantation is viable for the design of n-FET transistors with gate length down to 20nm in a FDSOI technology. Three implantation schemes are covered and their potential and limitations are presented in terms of technological challenges...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Vinet, M., Kumar, A., Grenouillet, L., Ponoth, S., Posseme, N., Destefanis, V., Mehta, S., Loubet, N., Le Tiec, Y., Monsieur, F., Liu, Q., Daval, N., Doris, B., Faynot, O., Poiroux, T.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Doping
Ion implantation
Junctions
Logic gates
Performance evaluation
Silicon
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:For the first time, we extensively review to which extent ion implantation is viable for the design of n-FET transistors with gate length down to 20nm in a FDSOI technology. Three implantation schemes are covered and their potential and limitations are presented in terms of technological challenges and electrical performance.
ISSN:1524-766X
2690-8174
DOI:10.1109/VLSI-TSA.2012.6210170