Electromagnetic Interference and Ionizing Radiation Effects on CMOS Devices

Integrated circuits are inherently complicated and made more by increasing transistor quantity and density. This trend potentially enhances concomitant effects of high-energy ionizing radiation and local or impressed electromagnetic interference (EMI). The reduced margin for signal error may counter...

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Veröffentlicht in:	IEEE transactions on plasma science 2012-06, Vol.40 (6), p.1495-1501
Hauptverfasser:	Estep, N. A., Petrosky, J. C., McClory, J. W., Kim, Y., Terzuoli, A. J.
Format:	Artikel
Sprache:	eng
Schlagworte:	CMOS CMOS integrated circuits Electric noise electromagnetic compatibility electromagnetic coupling Electromagnetic interference gamma irradiation effects Gamma rays Integrated circuits Inverters Ionizing radiation Leakage current MOSFETs Radiation
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