A high order temperature curvature compensated CMOS bandgap reference
This paper presents a second-order corrected bandgap reference (BGR) based on TSMC 0.35μm 2P3M CMOS process. This novel proposed CMOS bandgap reference take advantage of the high temperature coefficient (TC) of some resistors, to compensate the high-order temperature curvature of the base-emitter vo...
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| creator | Zhenyu Peng Changzhi Lv Shuojie She |
| description | This paper presents a second-order corrected bandgap reference (BGR) based on TSMC 0.35μm 2P3M CMOS process. This novel proposed CMOS bandgap reference take advantage of the high temperature coefficient (TC) of some resistors, to compensate the high-order temperature curvature of the base-emitter voltage (V BE ). This circuit can achieve temperature coefficient of 1.5ppm/°C for temperature from -40 to 120°C at 5 V power supply. The proposed circuit will find application in the high precision analog and digital circuits. |
| doi_str_mv | 10.1109/CECNet.2012.6201536 |
| format | Conference Proceeding |
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This novel proposed CMOS bandgap reference take advantage of the high temperature coefficient (TC) of some resistors, to compensate the high-order temperature curvature of the base-emitter voltage (V BE ). This circuit can achieve temperature coefficient of 1.5ppm/°C for temperature from -40 to 120°C at 5 V power supply. The proposed circuit will find application in the high precision analog and digital circuits.</description><identifier>ISBN: 9781457714146</identifier><identifier>ISBN: 1457714140</identifier><identifier>EISBN: 9781457714139</identifier><identifier>EISBN: 9781457714153</identifier><identifier>EISBN: 1457714132</identifier><identifier>EISBN: 1457714159</identifier><identifier>DOI: 10.1109/CECNet.2012.6201536</identifier><language>eng</language><publisher>IEEE</publisher><subject>Bandgap reference ; CMOS integrated circuits ; CMOS technology ; high-order temperature compensation ; Photonic band gap ; Resistors ; temperature coefficient ; Temperature dependence ; Temperature distribution</subject><ispartof>2012 2nd International Conference on Consumer Electronics, Communications and Networks (CECNet), 2012, p.2254-2257</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6201536$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2056,27916,54911</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6201536$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Zhenyu Peng</creatorcontrib><creatorcontrib>Changzhi Lv</creatorcontrib><creatorcontrib>Shuojie She</creatorcontrib><title>A high order temperature curvature compensated CMOS bandgap reference</title><title>2012 2nd International Conference on Consumer Electronics, Communications and Networks (CECNet)</title><addtitle>CECNet</addtitle><description>This paper presents a second-order corrected bandgap reference (BGR) based on TSMC 0.35μm 2P3M CMOS process. This novel proposed CMOS bandgap reference take advantage of the high temperature coefficient (TC) of some resistors, to compensate the high-order temperature curvature of the base-emitter voltage (V BE ). This circuit can achieve temperature coefficient of 1.5ppm/°C for temperature from -40 to 120°C at 5 V power supply. The proposed circuit will find application in the high precision analog and digital circuits.</description><subject>Bandgap reference</subject><subject>CMOS integrated circuits</subject><subject>CMOS technology</subject><subject>high-order temperature compensation</subject><subject>Photonic band gap</subject><subject>Resistors</subject><subject>temperature coefficient</subject><subject>Temperature dependence</subject><subject>Temperature distribution</subject><isbn>9781457714146</isbn><isbn>1457714140</isbn><isbn>9781457714139</isbn><isbn>9781457714153</isbn><isbn>1457714132</isbn><isbn>1457714159</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2012</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVT0tqwzAUVCmBlNQnyEYXsKsny5LeMhj3A2mzaPZBlp8Sl8YxslPo7WuoN5nF_BYDw9gaRAYg8Kmsyg8aMylAZnriItd3LEFjQRXGgIIc72-y0kuWDMOXmGCEtAofWLXhp_Z44pfYUOQjnXuKbrxG4v4af2Z3mdpucCM1vHzfffLadc3R9TxSoEidp0e2CO57oGTWFds_V_vyNd3uXt7KzTZtUYxp0NKBlIgukBLoCmutVkYWygvwQRF5G2oXMFBdow4mt9oL8qhMAAM6X7H1_2xLRIc-tmcXfw_z9_wPu6ZNog</recordid><startdate>201204</startdate><enddate>201204</enddate><creator>Zhenyu Peng</creator><creator>Changzhi Lv</creator><creator>Shuojie She</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201204</creationdate><title>A high order temperature curvature compensated CMOS bandgap reference</title><author>Zhenyu Peng ; Changzhi Lv ; Shuojie She</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-f62a12299afe409a5888647254c01cf4eec8fbaf9febb96f7386c0ec947f17163</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Bandgap reference</topic><topic>CMOS integrated circuits</topic><topic>CMOS technology</topic><topic>high-order temperature compensation</topic><topic>Photonic band gap</topic><topic>Resistors</topic><topic>temperature coefficient</topic><topic>Temperature dependence</topic><topic>Temperature distribution</topic><toplevel>online_resources</toplevel><creatorcontrib>Zhenyu Peng</creatorcontrib><creatorcontrib>Changzhi Lv</creatorcontrib><creatorcontrib>Shuojie She</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Zhenyu Peng</au><au>Changzhi Lv</au><au>Shuojie She</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A high order temperature curvature compensated CMOS bandgap reference</atitle><btitle>2012 2nd International Conference on Consumer Electronics, Communications and Networks (CECNet)</btitle><stitle>CECNet</stitle><date>2012-04</date><risdate>2012</risdate><spage>2254</spage><epage>2257</epage><pages>2254-2257</pages><isbn>9781457714146</isbn><isbn>1457714140</isbn><eisbn>9781457714139</eisbn><eisbn>9781457714153</eisbn><eisbn>1457714132</eisbn><eisbn>1457714159</eisbn><abstract>This paper presents a second-order corrected bandgap reference (BGR) based on TSMC 0.35μm 2P3M CMOS process. This novel proposed CMOS bandgap reference take advantage of the high temperature coefficient (TC) of some resistors, to compensate the high-order temperature curvature of the base-emitter voltage (V BE ). This circuit can achieve temperature coefficient of 1.5ppm/°C for temperature from -40 to 120°C at 5 V power supply. The proposed circuit will find application in the high precision analog and digital circuits.</abstract><pub>IEEE</pub><doi>10.1109/CECNet.2012.6201536</doi><tpages>4</tpages></addata></record> |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Bandgap reference CMOS integrated circuits CMOS technology high-order temperature compensation Photonic band gap Resistors temperature coefficient Temperature dependence Temperature distribution |
| title | A high order temperature curvature compensated CMOS bandgap reference |
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