Enhancement of Doping Concentration in P-Type SiGe Thermoelectric Alloy with the Addition of CrSi2

We report enhancement in doping concentration of p- type SiGe by small addition of CrSi 2 into the matrix. P-type SiGe thermoelectric alloy was synthesized by melting the elemental powders with and without addition of CrSi 2 . The transport properties of both ingots were measured in temperature rang...

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Hauptverfasser:	Rouhani, P., Zamanipour, Z., Krasinski, J. S., Vashaee, D., Tayebi, L.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Conductivity Germanium Silicon germanium Temperature measurement Thermal conductivity
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creator	Rouhani, P. Zamanipour, Z. Krasinski, J. S. Vashaee, D. Tayebi, L.
description	We report enhancement in doping concentration of p- type SiGe by small addition of CrSi 2 into the matrix. P-type SiGe thermoelectric alloy was synthesized by melting the elemental powders with and without addition of CrSi 2 . The transport properties of both ingots were measured in temperature range of 25- 850 ̊C. The results showed that the addition of CrSi 2 to SiGe enhances its electrical conductivity which is explained by enhancement in carrier concentration. Power factor of the composite sample was improved. Consequently, its figure-of-merit, ZT, increased compared with that of SiGe. In this study, the effect of nanostructuring on the SiGe : CrSi 2 composite was further studied and its transport property were compared with those of crystalline composite sample. The DTA thermograph of SiGe : CrSi 2 suggested the possibility of reaction between Cr and Si during sample synthesis which may resulted in formation of small amount of Cr 1-x Ge x (x=0.02- 0.03) alloy in the matrix.
doi_str_mv	10.1109/GREEN.2012.6200979
format	Conference Proceeding
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S.</au><au>Vashaee, D.</au><au>Tayebi, L.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Enhancement of Doping Concentration in P-Type SiGe Thermoelectric Alloy with the Addition of CrSi2</atitle><btitle>2012 IEEE Green Technologies Conference</btitle><stitle>GREEN</stitle><date>2012-04</date><risdate>2012</risdate><spage>1</spage><epage>4</epage><pages>1-4</pages><issn>2166-546X</issn><eissn>2166-5478</eissn><isbn>1467309680</isbn><isbn>9781467309684</isbn><eisbn>9781467309677</eisbn><eisbn>1467309672</eisbn><eisbn>9781467309660</eisbn><eisbn>1467309664</eisbn><abstract>We report enhancement in doping concentration of p- type SiGe by small addition of CrSi 2 into the matrix. P-type SiGe thermoelectric alloy was synthesized by melting the elemental powders with and without addition of CrSi 2 . The transport properties of both ingots were measured in temperature range of 25- 850 ̊C. The results showed that the addition of CrSi 2 to SiGe enhances its electrical conductivity which is explained by enhancement in carrier concentration. Power factor of the composite sample was improved. Consequently, its figure-of-merit, ZT, increased compared with that of SiGe. In this study, the effect of nanostructuring on the SiGe : CrSi 2 composite was further studied and its transport property were compared with those of crystalline composite sample. The DTA thermograph of SiGe : CrSi 2 suggested the possibility of reaction between Cr and Si during sample synthesis which may resulted in formation of small amount of Cr 1-x Ge x (x=0.02- 0.03) alloy in the matrix.</abstract><pub>IEEE</pub><doi>10.1109/GREEN.2012.6200979</doi></addata></record>
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subjects	Conductivity Germanium Silicon germanium Temperature measurement Thermal conductivity
title	Enhancement of Doping Concentration in P-Type SiGe Thermoelectric Alloy with the Addition of CrSi2
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