High-Performance Solenoidal RF Transformers on High-Resistivity Silicon Substrates for 3D Integrated Circuits
Soleniod-like transformers based on a traveling-wave design and using advanced through silicon via process technology are reported for operation at frequencies from 1 to 14 GHz. The symmetrical 1:1 transformers are designed as compact slow-wave transmission-line structures with well-defined signal r...
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| Veröffentlicht in: | IEEE transactions on microwave theory and techniques 2012-07, Vol.60 (7), p.2066-2072 |
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| container_title | IEEE transactions on microwave theory and techniques |
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| creator | Zhiping Feng Lueck, M. R. Temple, D. S. Steer, M. B. |
| description | Soleniod-like transformers based on a traveling-wave design and using advanced through silicon via process technology are reported for operation at frequencies from 1 to 14 GHz. The symmetrical 1:1 transformers are designed as compact slow-wave transmission-line structures with well-defined signal return paths. One-, two-, three-, and four-turn transformers have 1-dB bandwidths ranging from 6 to 9.2 GHz, and midband insertion losses from 0.24 to 0.37 dB. The measured intrinsic loss is 0.46 dB or less up to 10 GHz, and 0.97 dB up to 14 GHz. Relatively simple and scalable physically based lumped-element circuit models accurately predict the performance of these low parasitic transformers. |
| doi_str_mv | 10.1109/TMTT.2012.2195026 |
| format | Article |
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R.</creatorcontrib><creatorcontrib>Temple, D. S.</creatorcontrib><creatorcontrib>Steer, M. B.</creatorcontrib><title>High-Performance Solenoidal RF Transformers on High-Resistivity Silicon Substrates for 3D Integrated Circuits</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>Soleniod-like transformers based on a traveling-wave design and using advanced through silicon via process technology are reported for operation at frequencies from 1 to 14 GHz. The symmetrical 1:1 transformers are designed as compact slow-wave transmission-line structures with well-defined signal return paths. One-, two-, three-, and four-turn transformers have 1-dB bandwidths ranging from 6 to 9.2 GHz, and midband insertion losses from 0.24 to 0.37 dB. The measured intrinsic loss is 0.46 dB or less up to 10 GHz, and 0.97 dB up to 14 GHz. Relatively simple and scalable physically based lumped-element circuit models accurately predict the performance of these low parasitic transformers.</description><subject>3D integrated circuit (3DIC)</subject><subject>Applied sciences</subject><subject>Circuit properties</subject><subject>Circuits</subject><subject>Conductivity</subject><subject>Copper</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic tubes, masers</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Heterogeneous integration</subject><subject>Integrated circuits</subject><subject>Mathematical models</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>Microwaves</subject><subject>Noise levels</subject><subject>Power transformer insulation</subject><subject>Radio frequency</subject><subject>RF transformer</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon</subject><subject>Silicon substrates</subject><subject>slow-wave structure</subject><subject>Substrates</subject><subject>Three dimensional</subject><subject>through silicon via (TSV)</subject><subject>Transformers</subject><subject>Transmission line measurements</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkU9v1DAQxS0EEkvhAyAulhASlywe_5nER7SltFIRqBvOkeNMiqtsUuwEqd8ep7vqoafRzPvN6GkeY-9BbAGE_VL_qOutFCC3EqwREl-wDRhTFhZL8ZJthICqsLoSr9mblO5yq42oNuxwGW7_FL8o9lM8uNET308DjVPo3MBvLngd3ZhWjWLi08gf8RtKIc3hX5gf-D4MwWdhv7Rpjm6mxDPO1Tm_Gme6XScd34XolzCnt-xV74ZE7071jP2--FbvLovrn9-vdl-vC68MzoXqBVrR6qrFsiupxezVeGyFrBSWHvOctG-lKqVtOyNao_veKqMdOpB9p87Y5-Pd-zj9XSjNzSEkT8PgRpqW1IACg0aDxYx-fIbeTUscs7sGhFQC0ECVKThSPk4pReqb-xgOLj5kqFkDaNYAmjWA5hRA3vl0uuySd0OfP-lDelqUCAqx0pn7cOQCET3JCLbSUKr_NbCOTg</recordid><startdate>20120701</startdate><enddate>20120701</enddate><creator>Zhiping Feng</creator><creator>Lueck, M. 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Testing</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic tubes, masers</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Heterogeneous integration</topic><topic>Integrated circuits</topic><topic>Mathematical models</topic><topic>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</topic><topic>Microwaves</topic><topic>Noise levels</topic><topic>Power transformer insulation</topic><topic>Radio frequency</topic><topic>RF transformer</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicon</topic><topic>Silicon substrates</topic><topic>slow-wave structure</topic><topic>Substrates</topic><topic>Three dimensional</topic><topic>through silicon via (TSV)</topic><topic>Transformers</topic><topic>Transmission line measurements</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhiping Feng</creatorcontrib><creatorcontrib>Lueck, M. R.</creatorcontrib><creatorcontrib>Temple, D. S.</creatorcontrib><creatorcontrib>Steer, M. 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B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-Performance Solenoidal RF Transformers on High-Resistivity Silicon Substrates for 3D Integrated Circuits</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>2012-07-01</date><risdate>2012</risdate><volume>60</volume><issue>7</issue><spage>2066</spage><epage>2072</epage><pages>2066-2072</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>Soleniod-like transformers based on a traveling-wave design and using advanced through silicon via process technology are reported for operation at frequencies from 1 to 14 GHz. The symmetrical 1:1 transformers are designed as compact slow-wave transmission-line structures with well-defined signal return paths. One-, two-, three-, and four-turn transformers have 1-dB bandwidths ranging from 6 to 9.2 GHz, and midband insertion losses from 0.24 to 0.37 dB. The measured intrinsic loss is 0.46 dB or less up to 10 GHz, and 0.97 dB up to 14 GHz. Relatively simple and scalable physically based lumped-element circuit models accurately predict the performance of these low parasitic transformers.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TMTT.2012.2195026</doi><tpages>7</tpages></addata></record> |
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| ispartof | IEEE transactions on microwave theory and techniques, 2012-07, Vol.60 (7), p.2066-2072 |
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| source | IEEE Electronic Library (IEL) |
| subjects | 3D integrated circuit (3DIC) Applied sciences Circuit properties Circuits Conductivity Copper Design. Technologies. Operation analysis. Testing Electric, optical and optoelectronic circuits Electronic tubes, masers Electronics Exact sciences and technology Heterogeneous integration Integrated circuits Mathematical models Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwaves Noise levels Power transformer insulation Radio frequency RF transformer Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Silicon substrates slow-wave structure Substrates Three dimensional through silicon via (TSV) Transformers Transmission line measurements |
| title | High-Performance Solenoidal RF Transformers on High-Resistivity Silicon Substrates for 3D Integrated Circuits |
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