Thermo-mechanical characterization and modeling of TSV annealing behavior
This paper focuses on the characterization and Finite Element (FE) simulation of thermo-mechanical loads in Through Silicon Vias (TSVs), which emerge due to the annealing process after electro chemical deposition (ECD) of copper. For this purpose a FE-model has been implemented, which calculates the...
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| creator | Saettler, P. Kovalenko, D. Meier, K. Roellig, M. Boettcher, M. Wolter, K. J. |
| description | This paper focuses on the characterization and Finite Element (FE) simulation of thermo-mechanical loads in Through Silicon Vias (TSVs), which emerge due to the annealing process after electro chemical deposition (ECD) of copper. For this purpose a FE-model has been implemented, which calculates the stress state of TSV structures after annealing. To validate the model, measurements using μ-Raman spectroscopy (μRS) were carried out. Results from Finite Element Modeling (FEM) were converted into their corresponding Raman-Shifts to make it comparable to μRS measurements. Additionally warpage and copper protrusion were measured to receive a complete picture of the occurring mechanisms and boundary conditions. |
| doi_str_mv | 10.1109/ESimE.2012.6191745 |
| format | Conference Proceeding |
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Additionally warpage and copper protrusion were measured to receive a complete picture of the occurring mechanisms and boundary conditions.</description><subject>Annealing</subject><subject>Gain measurement</subject><subject>ISO standards</subject><subject>Materials</subject><subject>Strain</subject><subject>Stress measurement</subject><subject>Through-silicon vias</subject><isbn>1467315125</isbn><isbn>9781467315128</isbn><isbn>9781467315135</isbn><isbn>1467315117</isbn><isbn>9781467315111</isbn><isbn>1467315133</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2012</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1j8tKxDAYhSMiqGNfQDd9gdb8uWcpQ9WBARctboc0_WMjvUhaBH16Bx1X5zvf4sAh5BZoCUDtfVXHsSoZBVYqsKCFPCOZ1QaE0hwkcHlOrv8Lk5ckW5Z3SilopYSWV2TX9JjGuRjR926K3g35EZLzK6b47dY4T7mbunycOxzi9JbPIW_q16Ob0P2KFnv3Ged0Qy6CGxbMTrkh9WPVbJ-L_cvTbvuwL6Kla2EE15ZyhqxjIoTOdCEYbRRiywNQb1rPhXSd4Vo75bVHD62RSGVrHWd8Q-7-ViMiHj5SHF36Opy-8x8dpk5j</recordid><startdate>201204</startdate><enddate>201204</enddate><creator>Saettler, P.</creator><creator>Kovalenko, D.</creator><creator>Meier, K.</creator><creator>Roellig, M.</creator><creator>Boettcher, M.</creator><creator>Wolter, K. 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J.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Thermo-mechanical characterization and modeling of TSV annealing behavior</atitle><btitle>2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems</btitle><stitle>ESimE</stitle><date>2012-04</date><risdate>2012</risdate><spage>1/6</spage><epage>6/6</epage><pages>1/6-6/6</pages><isbn>1467315125</isbn><isbn>9781467315128</isbn><eisbn>9781467315135</eisbn><eisbn>1467315117</eisbn><eisbn>9781467315111</eisbn><eisbn>1467315133</eisbn><abstract>This paper focuses on the characterization and Finite Element (FE) simulation of thermo-mechanical loads in Through Silicon Vias (TSVs), which emerge due to the annealing process after electro chemical deposition (ECD) of copper. For this purpose a FE-model has been implemented, which calculates the stress state of TSV structures after annealing. To validate the model, measurements using μ-Raman spectroscopy (μRS) were carried out. Results from Finite Element Modeling (FEM) were converted into their corresponding Raman-Shifts to make it comparable to μRS measurements. Additionally warpage and copper protrusion were measured to receive a complete picture of the occurring mechanisms and boundary conditions.</abstract><pub>IEEE</pub><doi>10.1109/ESimE.2012.6191745</doi></addata></record> |
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| identifier | ISBN: 1467315125 |
| ispartof | 2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, 2012, p.1/6-6/6 |
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| language | eng |
| recordid | cdi_ieee_primary_6191745 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Annealing Gain measurement ISO standards Materials Strain Stress measurement Through-silicon vias |
| title | Thermo-mechanical characterization and modeling of TSV annealing behavior |
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