Characteristics of a-SiGe:H Thin Film Transistor Infrared Photosensor for Touch Sensing Displays
Photo-generation properties in an amorphous SiGe:H thin film transistor (TFT) were characterized by analyzing the electrical performances under illumination. The a-SiGe:H TFT showed a higher photo sensitivity at the wavelength of IR regime, and as a-SiGe:H layer was thicker, the generated photo curr...
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| Veröffentlicht in: | IEEE journal of quantum electronics 2012-07, Vol.48 (7), p.952-959 |
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| container_title | IEEE journal of quantum electronics |
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| creator | Han, Sang Youn Jeon, Kyung Sook Cho, Byeonghoon Seo, Mi Seon Song, Junho Kong, Hyang-Shik |
| description | Photo-generation properties in an amorphous SiGe:H thin film transistor (TFT) were characterized by analyzing the electrical performances under illumination. The a-SiGe:H TFT showed a higher photo sensitivity at the wavelength of IR regime, and as a-SiGe:H layer was thicker, the generated photo currents proportionally increased due to the higher photon absorption. The increase of Ge composition led to the reduction of optical energy band gap. However, the photo sensitivity was not increased with lowering of energy band gap due to the creation of defects in the layer. The photo generation was dependent on the geometry of TFT, such as channel width and length. In particular, it was observed that regions under the source/drain electrode played a critical role in generating the photo currents which was demonstrated by technology computer-aided design simulation. Based on these, the generation of photo current and the photo field effect in a-SiGe:H TFT were interpreted using band diagrams. A-SiGe:H IR photosensor-embedded liquid crystal display panel was successfully demonstrated, indicating that these can be useful to broad use in the photo-type touch sensor, photo detector, and solar cell devices. |
| doi_str_mv | 10.1109/JQE.2012.2196411 |
| format | Article |
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The a-SiGe:H TFT showed a higher photo sensitivity at the wavelength of IR regime, and as a-SiGe:H layer was thicker, the generated photo currents proportionally increased due to the higher photon absorption. The increase of Ge composition led to the reduction of optical energy band gap. However, the photo sensitivity was not increased with lowering of energy band gap due to the creation of defects in the layer. The photo generation was dependent on the geometry of TFT, such as channel width and length. In particular, it was observed that regions under the source/drain electrode played a critical role in generating the photo currents which was demonstrated by technology computer-aided design simulation. Based on these, the generation of photo current and the photo field effect in a-SiGe:H TFT were interpreted using band diagrams. 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The a-SiGe:H TFT showed a higher photo sensitivity at the wavelength of IR regime, and as a-SiGe:H layer was thicker, the generated photo currents proportionally increased due to the higher photon absorption. The increase of Ge composition led to the reduction of optical energy band gap. However, the photo sensitivity was not increased with lowering of energy band gap due to the creation of defects in the layer. The photo generation was dependent on the geometry of TFT, such as channel width and length. In particular, it was observed that regions under the source/drain electrode played a critical role in generating the photo currents which was demonstrated by technology computer-aided design simulation. Based on these, the generation of photo current and the photo field effect in a-SiGe:H TFT were interpreted using band diagrams. A-SiGe:H IR photosensor-embedded liquid crystal display panel was successfully demonstrated, indicating that these can be useful to broad use in the photo-type touch sensor, photo detector, and solar cell devices.</description><subject>Absorption</subject><subject>Amorphous SiGe</subject><subject>infrared detector</subject><subject>Lighting</subject><subject>Logic gates</subject><subject>Optical sensors</subject><subject>Photonics</subject><subject>photosensor</subject><subject>Sensitivity</subject><subject>thin film transistor</subject><subject>Thin film transistors</subject><issn>0018-9197</issn><issn>1558-1713</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kMtOwzAQRS0EEqGwR2LjH0jw2I4f7FDpC1UC1LAOTuIQozap7LDo3-OqFYvRaI7uncVB6B5IBkD04-vHLKMEaEZBCw5wgRLIc5WCBHaJEkJApRq0vEY3IfzEk3NFEvQ17Yw39Wi9C6OrAx5abNKNW9inJS461-O52-5w4U0fYmLweNW33njb4PduGIdg-xBhG6cYfusObyJw_Td-cWG_NYdwi65asw327rwn6HM-K6bLdP22WE2f12lNBRtTUIJVrKmA60aCiMxw1ZiGS5M3QGvJgOVcCVVZapmglHKQKqdVRaWwQrMJIqe_tR9C8LYt997tjD-UQMqjoTIaKo-GyrOhWHk4VZy19j8uQGlJKfsDYv5hQA</recordid><startdate>20120701</startdate><enddate>20120701</enddate><creator>Han, Sang Youn</creator><creator>Jeon, Kyung Sook</creator><creator>Cho, Byeonghoon</creator><creator>Seo, Mi Seon</creator><creator>Song, Junho</creator><creator>Kong, Hyang-Shik</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20120701</creationdate><title>Characteristics of a-SiGe:H Thin Film Transistor Infrared Photosensor for Touch Sensing Displays</title><author>Han, Sang Youn ; Jeon, Kyung Sook ; Cho, Byeonghoon ; Seo, Mi Seon ; Song, Junho ; Kong, Hyang-Shik</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c263t-1863b3db149d716263a48dad47a5d12c731354868be2e36222417852bb276e693</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Absorption</topic><topic>Amorphous SiGe</topic><topic>infrared detector</topic><topic>Lighting</topic><topic>Logic gates</topic><topic>Optical sensors</topic><topic>Photonics</topic><topic>photosensor</topic><topic>Sensitivity</topic><topic>thin film transistor</topic><topic>Thin film transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Han, Sang Youn</creatorcontrib><creatorcontrib>Jeon, Kyung Sook</creatorcontrib><creatorcontrib>Cho, Byeonghoon</creatorcontrib><creatorcontrib>Seo, Mi Seon</creatorcontrib><creatorcontrib>Song, Junho</creatorcontrib><creatorcontrib>Kong, Hyang-Shik</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><jtitle>IEEE journal of quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Han, Sang Youn</au><au>Jeon, Kyung Sook</au><au>Cho, Byeonghoon</au><au>Seo, Mi Seon</au><au>Song, Junho</au><au>Kong, Hyang-Shik</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characteristics of a-SiGe:H Thin Film Transistor Infrared Photosensor for Touch Sensing Displays</atitle><jtitle>IEEE journal of quantum electronics</jtitle><stitle>JQE</stitle><date>2012-07-01</date><risdate>2012</risdate><volume>48</volume><issue>7</issue><spage>952</spage><epage>959</epage><pages>952-959</pages><issn>0018-9197</issn><eissn>1558-1713</eissn><coden>IEJQA7</coden><abstract>Photo-generation properties in an amorphous SiGe:H thin film transistor (TFT) were characterized by analyzing the electrical performances under illumination. The a-SiGe:H TFT showed a higher photo sensitivity at the wavelength of IR regime, and as a-SiGe:H layer was thicker, the generated photo currents proportionally increased due to the higher photon absorption. The increase of Ge composition led to the reduction of optical energy band gap. However, the photo sensitivity was not increased with lowering of energy band gap due to the creation of defects in the layer. The photo generation was dependent on the geometry of TFT, such as channel width and length. In particular, it was observed that regions under the source/drain electrode played a critical role in generating the photo currents which was demonstrated by technology computer-aided design simulation. Based on these, the generation of photo current and the photo field effect in a-SiGe:H TFT were interpreted using band diagrams. A-SiGe:H IR photosensor-embedded liquid crystal display panel was successfully demonstrated, indicating that these can be useful to broad use in the photo-type touch sensor, photo detector, and solar cell devices.</abstract><pub>IEEE</pub><doi>10.1109/JQE.2012.2196411</doi><tpages>8</tpages></addata></record> |
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| subjects | Absorption Amorphous SiGe infrared detector Lighting Logic gates Optical sensors Photonics photosensor Sensitivity thin film transistor Thin film transistors |
| title | Characteristics of a-SiGe:H Thin Film Transistor Infrared Photosensor for Touch Sensing Displays |
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