Base transit time of a heterojunction bipolar transistor (HBT) with Gaussian doped base under high-level of injection

Base transit time for an npn SiGe HBT has been analysed assuming Gaussian doped base considering doping dependent mobility. Band-gap narrowing (BGN) effects due to heavy doping, due to presence of Germanium and due to change in the density of states (DOS) have also been considered. The presence of G...

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Bibliographische Detailangaben

Hauptverfasser:	Islam, S. M. Moududul, Chowdhury, M. I. B., Arafat, Y., Khan, M. Z. R.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Band gap narrowing Base transit time Density of states Gaussian doping HBT
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