A Three-Mask-Processed Coplanar a-IGZO TFT With Source and Drain Offsets

A Three-Mask-Processed Coplanar a-IGZO TFT With Source and Drain Offsets

We report a three-mask-processed coplanar amorphous-InGaZnO thin-hlm transistor (TFT) with equal offsets at the source and drain sides. TFTs with offset lengths ranging from 1.5 to 4.0 μm exhibit good switching characteristics with turn-on voltage around -1.6 V, gate swing of ~0.1 V/decade, and on/o...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE electron device letters 2012-06, Vol.33 (6), p.812-814
Hauptverfasser: Ung Gi Lee, Mativenga, M., Dong Han Kang, Jin Jang
Format: Artikel
Sprache:eng
Schlagworte:
Amorphous indium-gallium-zinc-oxide (a-IGZO)
Applied sciences
coplanar
Design. Technologies. Operation analysis. Testing
Drains
Electric potential
Electrodes
Electronics
Exact sciences and technology
Fabrication
Gates
Insulators
Integrated circuits
Leakage current
Logic gates
Offsets
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Swing
Thin film transistors
thin-film transistor (TFT)
top gate
Transistors
Voltage
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We report a three-mask-processed coplanar amorphous-InGaZnO thin-hlm transistor (TFT) with equal offsets at the source and drain sides. TFTs with offset lengths ranging from 1.5 to 4.0 μm exhibit good switching characteristics with turn-on voltage around -1.6 V, gate swing of ~0.1 V/decade, and on/off current ratio >;10 5 . While gate swing and turn-on voltage are independent of the offset length, the held-effect mobility decreases from 2.4 to 0.5 cm 2 /V · s as the offset length increases from 1.5 to 4 μm. This coplanar TFT is suitable for cost-effective active-matrix displays with minimal kickback/feedthrough voltage.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2012.2190260