Defect generation and propagation in mc-Si ingots: Influence on cell-to-cell performance variation
This paper describes results of our study aimed at understanding mechanism(s) of dislocation generation and propagation in multicrystalline silicon (mc-Si) ingots, and evaluating their influence on the solar cell performance. This work was done in two parts: (i) Measurement of dislocation distributi...
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| creator | Sopori, B. Rupnowski, P. Shet, S. Mehta, V. Seacrist, M. Shi, G. Chen, J. Deshpande, A. |
| description | This paper describes results of our study aimed at understanding mechanism(s) of dislocation generation and propagation in multicrystalline silicon (mc-Si) ingots, and evaluating their influence on the solar cell performance. This work was done in two parts: (i) Measurement of dislocation distributions along various bricks, selected from strategic locations within several ingots; and (ii) Theoretical modeling of the cell performance corresponding to the measured dislocation distributions. Solar cells were fabricated on wafers of known dislocation distribution, and the results were compared with the theory. These results show that cell performance can be accurately predicted from the dislocation distribution, and the changes in the dislocation distribution are the primary cause for variations in the cell-to-cell performance. The dislocation generation and propagation mechanisms, suggested by our results, are described in this paper. |
| doi_str_mv | 10.1109/PVSC.2011.6186686 |
| format | Conference Proceeding |
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(NREL), Golden, CO (United States)</creatorcontrib><description>This paper describes results of our study aimed at understanding mechanism(s) of dislocation generation and propagation in multicrystalline silicon (mc-Si) ingots, and evaluating their influence on the solar cell performance. This work was done in two parts: (i) Measurement of dislocation distributions along various bricks, selected from strategic locations within several ingots; and (ii) Theoretical modeling of the cell performance corresponding to the measured dislocation distributions. Solar cells were fabricated on wafers of known dislocation distribution, and the results were compared with the theory. These results show that cell performance can be accurately predicted from the dislocation distribution, and the changes in the dislocation distribution are the primary cause for variations in the cell-to-cell performance. 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(NREL), Golden, CO (United States)</creatorcontrib><title>Defect generation and propagation in mc-Si ingots: Influence on cell-to-cell performance variation</title><title>2011 37th IEEE Photovoltaic Specialists Conference</title><addtitle>PVSC</addtitle><description>This paper describes results of our study aimed at understanding mechanism(s) of dislocation generation and propagation in multicrystalline silicon (mc-Si) ingots, and evaluating their influence on the solar cell performance. This work was done in two parts: (i) Measurement of dislocation distributions along various bricks, selected from strategic locations within several ingots; and (ii) Theoretical modeling of the cell performance corresponding to the measured dislocation distributions. Solar cells were fabricated on wafers of known dislocation distribution, and the results were compared with the theory. These results show that cell performance can be accurately predicted from the dislocation distribution, and the changes in the dislocation distribution are the primary cause for variations in the cell-to-cell performance. The dislocation generation and propagation mechanisms, suggested by our results, are described in this paper.</description><subject>BRICKS</subject><subject>Correlation</subject><subject>DEFECTS</subject><subject>dislocation generation</subject><subject>DISLOCATIONS</subject><subject>DISTRIBUTION</subject><subject>Gettering</subject><subject>Grain boundaries</subject><subject>MATERIALS SCIENCE</subject><subject>multicrystalline silicon</subject><subject>Photovoltaic cells</subject><subject>Semiconductor device modeling</subject><subject>SILICON</subject><subject>SIMULATION</subject><subject>solar cell performance</subject><subject>SOLAR CELLS</subject><subject>SOLAR ENERGY</subject><subject>Stress</subject><subject>Thermal stresses</subject><issn>0160-8371</issn><isbn>9781424499663</isbn><isbn>1424499666</isbn><isbn>9781424499649</isbn><isbn>142449964X</isbn><isbn>9781424499656</isbn><isbn>1424499658</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2011</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVUE1Lw0AUXFHBUvsDxMviPXVf9iO73qR-FQoKVa9hs3mpK-kmbFbBf29qe_Fd5g0zDMwQcgFsDsDM9cv7ejHPGcBcgVZKqyMyM4UGkQthjBLm-B9X_IRMGCiWaV7AGZkNwycbr2B81CakusMGXaIbDBht8l2gNtS0j11vN3vuA926bO3HZ9Ol4YYuQ9N-YXBIR9Vh22apy3ZIe4xNF7d2p33b6P8CzslpY9sBZweckreH-9fFU7Z6flwubleZByhSBrqouHGFk06CqyuBBmoFcuwhbCWZraXlmskqV6ZQDsA1wqDTOq-bWpmaT8nVPrcbki8H5xO6D9eFMPYrgQnJlB5Nl3uTR8Syj35r4095mJL_AkM0ZSs</recordid><startdate>201106</startdate><enddate>201106</enddate><creator>Sopori, B.</creator><creator>Rupnowski, P.</creator><creator>Shet, S.</creator><creator>Mehta, V.</creator><creator>Seacrist, M.</creator><creator>Shi, G.</creator><creator>Chen, J.</creator><creator>Deshpande, A.</creator><general>IEEE</general><general>Piscataway, NJ: Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope><scope>OTOTI</scope></search><sort><creationdate>201106</creationdate><title>Defect generation and propagation in mc-Si ingots: Influence on cell-to-cell performance variation</title><author>Sopori, B. ; Rupnowski, P. ; Shet, S. ; Mehta, V. ; Seacrist, M. ; Shi, G. ; Chen, J. ; Deshpande, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i117t-187b39c7c5c51cdb4e91d6152444ab50ad5a3805b26976c11cf49ec882dfd69d3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2011</creationdate><topic>BRICKS</topic><topic>Correlation</topic><topic>DEFECTS</topic><topic>dislocation generation</topic><topic>DISLOCATIONS</topic><topic>DISTRIBUTION</topic><topic>Gettering</topic><topic>Grain boundaries</topic><topic>MATERIALS SCIENCE</topic><topic>multicrystalline silicon</topic><topic>Photovoltaic cells</topic><topic>Semiconductor device modeling</topic><topic>SILICON</topic><topic>SIMULATION</topic><topic>solar cell performance</topic><topic>SOLAR CELLS</topic><topic>SOLAR ENERGY</topic><topic>Stress</topic><topic>Thermal stresses</topic><toplevel>online_resources</toplevel><creatorcontrib>Sopori, B.</creatorcontrib><creatorcontrib>Rupnowski, P.</creatorcontrib><creatorcontrib>Shet, S.</creatorcontrib><creatorcontrib>Mehta, V.</creatorcontrib><creatorcontrib>Seacrist, M.</creatorcontrib><creatorcontrib>Shi, G.</creatorcontrib><creatorcontrib>Chen, J.</creatorcontrib><creatorcontrib>Deshpande, A.</creatorcontrib><creatorcontrib>National Renewable Energy Lab. (NREL), Golden, CO (United States)</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection><collection>OSTI.GOV</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sopori, B.</au><au>Rupnowski, P.</au><au>Shet, S.</au><au>Mehta, V.</au><au>Seacrist, M.</au><au>Shi, G.</au><au>Chen, J.</au><au>Deshpande, A.</au><aucorp>National Renewable Energy Lab. (NREL), Golden, CO (United States)</aucorp><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Defect generation and propagation in mc-Si ingots: Influence on cell-to-cell performance variation</atitle><btitle>2011 37th IEEE Photovoltaic Specialists Conference</btitle><stitle>PVSC</stitle><date>2011-06</date><risdate>2011</risdate><spage>003440</spage><epage>003445</epage><pages>003440-003445</pages><issn>0160-8371</issn><isbn>9781424499663</isbn><isbn>1424499666</isbn><eisbn>9781424499649</eisbn><eisbn>142449964X</eisbn><eisbn>9781424499656</eisbn><eisbn>1424499658</eisbn><abstract>This paper describes results of our study aimed at understanding mechanism(s) of dislocation generation and propagation in multicrystalline silicon (mc-Si) ingots, and evaluating their influence on the solar cell performance. This work was done in two parts: (i) Measurement of dislocation distributions along various bricks, selected from strategic locations within several ingots; and (ii) Theoretical modeling of the cell performance corresponding to the measured dislocation distributions. Solar cells were fabricated on wafers of known dislocation distribution, and the results were compared with the theory. These results show that cell performance can be accurately predicted from the dislocation distribution, and the changes in the dislocation distribution are the primary cause for variations in the cell-to-cell performance. The dislocation generation and propagation mechanisms, suggested by our results, are described in this paper.</abstract><cop>United States</cop><pub>IEEE</pub><doi>10.1109/PVSC.2011.6186686</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0160-8371 |
| ispartof | 2011 37th IEEE Photovoltaic Specialists Conference, 2011, p.003440-003445 |
| issn | 0160-8371 |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | BRICKS Correlation DEFECTS dislocation generation DISLOCATIONS DISTRIBUTION Gettering Grain boundaries MATERIALS SCIENCE multicrystalline silicon Photovoltaic cells Semiconductor device modeling SILICON SIMULATION solar cell performance SOLAR CELLS SOLAR ENERGY Stress Thermal stresses |
| title | Defect generation and propagation in mc-Si ingots: Influence on cell-to-cell performance variation |
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