Characterization and comparison of silicon nitride films deposited using two novel processes

Hydrogenated silicon nitride films (SiN x :H) deposited using a PECVD process enhance the performance of crystalline silicon solar cells by functioning as an efficient anti-reflection coating and passivating layer. In this paper, we compared two novel SiN x :H deposition processes using two differen...

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Bibliographische Detailangaben

Hauptverfasser:	Sharma, V., Bailey, A., Dauksher, B., Tracy, C., Bowden, S., O'Brien, B.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Firing Photovoltaic cells Plasma temperature Reflectivity Refractive index Silicon
Online-Zugang:	Volltext bestellen
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