Characterization and comparison of silicon nitride films deposited using two novel processes
Hydrogenated silicon nitride films (SiN x :H) deposited using a PECVD process enhance the performance of crystalline silicon solar cells by functioning as an efficient anti-reflection coating and passivating layer. In this paper, we compared two novel SiN x :H deposition processes using two differen...
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| creator | Sharma, V. Bailey, A. Dauksher, B. Tracy, C. Bowden, S. O'Brien, B. |
| description | Hydrogenated silicon nitride films (SiN x :H) deposited using a PECVD process enhance the performance of crystalline silicon solar cells by functioning as an efficient anti-reflection coating and passivating layer. In this paper, we compared two novel SiN x :H deposition processes using two different PECVD tools - one non-traditional in process regime, and the other non-traditional in type, to determine their suitability to solar cell fabrication. The parameter space was explored by employing a design of experiment methodology followed by material characterization using VASE, reflectance, FTIR and RBS/ERD. The thickness and reflectance of Si-rich films changed dramatically after annealing. Further, FTIR results showed that the Si-H bond peak present at 2160 cm -1 in such films disappeared after a typical Al firing step. Therefore, the optimized films were deposited with a lower SiH 4 /NH 3 ratio to minimize the changes in the film properties after annealing. |
| doi_str_mv | 10.1109/PVSC.2011.6186395 |
| format | Conference Proceeding |
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| ispartof | 2011 37th IEEE Photovoltaic Specialists Conference, 2011, p.002206-002211 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Firing Photovoltaic cells Plasma temperature Reflectivity Refractive index Silicon |
| title | Characterization and comparison of silicon nitride films deposited using two novel processes |
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