Study of the ion-implanted back-surface fields in front-contact front-junction solar cells

We have studied low energy ion-implanted P+ and N+ back surface field (BSF) layers with shallow junctions in front-contact front-junction solar cells for the first time as far as we know. With N+ BSF layer, V oc and the efficiency of the solar cells increased on average by 30 mV and 1.3%, respective...

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Hauptverfasser:	Deok-kee Kim, Youngmoon Choi, Eun Cheol Do, Jinsoo Mun, Jin Wook Lee, Ihngee Baik, Dongkyun Kim, Yun Gi Kim
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Charge carrier processes Doping Photovoltaic cells Radiative recombination Silicon Surface treatment
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creator	Deok-kee Kim Youngmoon Choi Eun Cheol Do Jinsoo Mun Jin Wook Lee Ihngee Baik Dongkyun Kim Yun Gi Kim
description	We have studied low energy ion-implanted P+ and N+ back surface field (BSF) layers with shallow junctions in front-contact front-junction solar cells for the first time as far as we know. With N+ BSF layer, V oc and the efficiency of the solar cells increased on average by 30 mV and 1.3%, respectively. N+ BSF layer reduced recombination at the back surface significantly while P+ layer increased it. The higher V oc due to the reduced recombination for the N+ BSF and the lower V oc due to the increased recombination for the P+ BSF were attributed to the asymmetry in the capture cross-sections of the minority carriers (σ n ~ 100*σ p ).
doi_str_mv	10.1109/PVSC.2011.6186331
format	Conference Proceeding
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subjects	Charge carrier processes Doping Photovoltaic cells Radiative recombination Silicon Surface treatment
title	Study of the ion-implanted back-surface fields in front-contact front-junction solar cells
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