A new method for rapid measurement of orientations and sizes of grains in multicrystalline silicon wafers
We describe a new technique for rapid measurement of orientations and sizes of various grains in a multicrystalline silicon (mc-Si) wafer. The wafer is texture etched to expose (111) faces nearest to each surface. Because grains of different orientations result in uniquely different texture shapes,...
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| creator | Sopori, Bhushan Guhabiswas, D. Rupnowski, P. Shet, S. Devayajanam, S. Moutinho, H. |
| description | We describe a new technique for rapid measurement of orientations and sizes of various grains in a multicrystalline silicon (mc-Si) wafer. The wafer is texture etched to expose (111) faces nearest to each surface. Because grains of different orientations result in uniquely different texture shapes, they also have well-defined reflectance values. Hence, the process of determining the grain orientations is brought down to making reflectance maps. Reflectance maps are produced by PVSCAN or reflectometer (GT FabScan), and then transformed into orientation maps. Because the grain boundaries are very well delineated in the reflectance maps, they are also excellent for making measurements of size and distribution of grains. We will compare the results of this technique with other standard techniques. |
| doi_str_mv | 10.1109/PVSC.2011.6186278 |
| format | Conference Proceeding |
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(NREL), Golden, CO (United States)</creatorcontrib><description>We describe a new technique for rapid measurement of orientations and sizes of various grains in a multicrystalline silicon (mc-Si) wafer. The wafer is texture etched to expose (111) faces nearest to each surface. Because grains of different orientations result in uniquely different texture shapes, they also have well-defined reflectance values. Hence, the process of determining the grain orientations is brought down to making reflectance maps. Reflectance maps are produced by PVSCAN or reflectometer (GT FabScan), and then transformed into orientation maps. Because the grain boundaries are very well delineated in the reflectance maps, they are also excellent for making measurements of size and distribution of grains. We will compare the results of this technique with other standard techniques.</description><identifier>ISSN: 0160-8371</identifier><identifier>ISBN: 9781424499663</identifier><identifier>ISBN: 1424499666</identifier><identifier>EISBN: 9781424499649</identifier><identifier>EISBN: 142449964X</identifier><identifier>EISBN: 9781424499656</identifier><identifier>EISBN: 1424499658</identifier><identifier>DOI: 10.1109/PVSC.2011.6186278</identifier><language>eng</language><publisher>United States: IEEE</publisher><subject>Crystals ; DISTRIBUTION ; GRAIN BOUNDARIES ; GRAIN ORIENTATION ; grain orientations ; MATERIALS SCIENCE ; ORIENTATION ; rapid measurement ; Reflection ; Reflectivity ; Shape ; SILICON ; silicon wafers ; SOLAR ENERGY ; Surface texture ; Surface treatment ; TEXTURE</subject><ispartof>2011 37th IEEE Photovoltaic Specialists Conference, 2011, p.001680-001685</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6186278$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,885,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6186278$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttps://www.osti.gov/biblio/1045069$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Sopori, Bhushan</creatorcontrib><creatorcontrib>Guhabiswas, D.</creatorcontrib><creatorcontrib>Rupnowski, P.</creatorcontrib><creatorcontrib>Shet, S.</creatorcontrib><creatorcontrib>Devayajanam, S.</creatorcontrib><creatorcontrib>Moutinho, H.</creatorcontrib><creatorcontrib>National Renewable Energy Lab. (NREL), Golden, CO (United States)</creatorcontrib><title>A new method for rapid measurement of orientations and sizes of grains in multicrystalline silicon wafers</title><title>2011 37th IEEE Photovoltaic Specialists Conference</title><addtitle>PVSC</addtitle><description>We describe a new technique for rapid measurement of orientations and sizes of various grains in a multicrystalline silicon (mc-Si) wafer. The wafer is texture etched to expose (111) faces nearest to each surface. Because grains of different orientations result in uniquely different texture shapes, they also have well-defined reflectance values. Hence, the process of determining the grain orientations is brought down to making reflectance maps. Reflectance maps are produced by PVSCAN or reflectometer (GT FabScan), and then transformed into orientation maps. Because the grain boundaries are very well delineated in the reflectance maps, they are also excellent for making measurements of size and distribution of grains. We will compare the results of this technique with other standard techniques.</description><subject>Crystals</subject><subject>DISTRIBUTION</subject><subject>GRAIN BOUNDARIES</subject><subject>GRAIN ORIENTATION</subject><subject>grain orientations</subject><subject>MATERIALS SCIENCE</subject><subject>ORIENTATION</subject><subject>rapid measurement</subject><subject>Reflection</subject><subject>Reflectivity</subject><subject>Shape</subject><subject>SILICON</subject><subject>silicon wafers</subject><subject>SOLAR ENERGY</subject><subject>Surface texture</subject><subject>Surface treatment</subject><subject>TEXTURE</subject><issn>0160-8371</issn><isbn>9781424499663</isbn><isbn>1424499666</isbn><isbn>9781424499649</isbn><isbn>142449964X</isbn><isbn>9781424499656</isbn><isbn>1424499658</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2011</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVkE1rwzAMhj22wUrXHzB2Mbuns5zETo6l7AsKG6zsGlRHWT0Sp9gupfv18-gu00XS875IQozdgJgDiPr-7eN9OZcCYK6gUlJXZ2xW6woKWRR1rYr6_F-v8gs2EaBEVuUartgshC-RQos8aRNmF9zRgQ8Ut2PLu9FzjzvbJoBh72kgF_nY8dHbVGG0owscXcuD_abwq3x6tIlZx4d9H63xxxCx762j5OmtGR0_YEc-XLPLDvtAs788ZevHh_XyOVu9Pr0sF6vMQpXHjIyhkkoUcgO4wU2lCtIJ6RJ0BwiqEtTmWEuB0nRojNayk1IbhWmNzqfs7jR2DNE2wdhIZpuucGRiA6IohaqT6fZkskTU7Lwd0B-bv4fmPzz6aYs</recordid><startdate>201106</startdate><enddate>201106</enddate><creator>Sopori, Bhushan</creator><creator>Guhabiswas, D.</creator><creator>Rupnowski, P.</creator><creator>Shet, S.</creator><creator>Devayajanam, S.</creator><creator>Moutinho, H.</creator><general>IEEE</general><general>Piscataway, NJ: Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope><scope>OTOTI</scope></search><sort><creationdate>201106</creationdate><title>A new method for rapid measurement of orientations and sizes of grains in multicrystalline silicon wafers</title><author>Sopori, Bhushan ; Guhabiswas, D. ; Rupnowski, P. ; Shet, S. ; Devayajanam, S. ; Moutinho, H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i183t-ecce5e5a02b1abab864e7ce57517f1a1680ed3a920a2cfacc772f227c6aafe73</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Crystals</topic><topic>DISTRIBUTION</topic><topic>GRAIN BOUNDARIES</topic><topic>GRAIN ORIENTATION</topic><topic>grain orientations</topic><topic>MATERIALS SCIENCE</topic><topic>ORIENTATION</topic><topic>rapid measurement</topic><topic>Reflection</topic><topic>Reflectivity</topic><topic>Shape</topic><topic>SILICON</topic><topic>silicon wafers</topic><topic>SOLAR ENERGY</topic><topic>Surface texture</topic><topic>Surface treatment</topic><topic>TEXTURE</topic><toplevel>online_resources</toplevel><creatorcontrib>Sopori, Bhushan</creatorcontrib><creatorcontrib>Guhabiswas, D.</creatorcontrib><creatorcontrib>Rupnowski, P.</creatorcontrib><creatorcontrib>Shet, S.</creatorcontrib><creatorcontrib>Devayajanam, S.</creatorcontrib><creatorcontrib>Moutinho, H.</creatorcontrib><creatorcontrib>National Renewable Energy Lab. (NREL), Golden, CO (United States)</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection><collection>OSTI.GOV</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sopori, Bhushan</au><au>Guhabiswas, D.</au><au>Rupnowski, P.</au><au>Shet, S.</au><au>Devayajanam, S.</au><au>Moutinho, H.</au><aucorp>National Renewable Energy Lab. (NREL), Golden, CO (United States)</aucorp><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A new method for rapid measurement of orientations and sizes of grains in multicrystalline silicon wafers</atitle><btitle>2011 37th IEEE Photovoltaic Specialists Conference</btitle><stitle>PVSC</stitle><date>2011-06</date><risdate>2011</risdate><spage>001680</spage><epage>001685</epage><pages>001680-001685</pages><issn>0160-8371</issn><isbn>9781424499663</isbn><isbn>1424499666</isbn><eisbn>9781424499649</eisbn><eisbn>142449964X</eisbn><eisbn>9781424499656</eisbn><eisbn>1424499658</eisbn><abstract>We describe a new technique for rapid measurement of orientations and sizes of various grains in a multicrystalline silicon (mc-Si) wafer. The wafer is texture etched to expose (111) faces nearest to each surface. Because grains of different orientations result in uniquely different texture shapes, they also have well-defined reflectance values. Hence, the process of determining the grain orientations is brought down to making reflectance maps. Reflectance maps are produced by PVSCAN or reflectometer (GT FabScan), and then transformed into orientation maps. Because the grain boundaries are very well delineated in the reflectance maps, they are also excellent for making measurements of size and distribution of grains. We will compare the results of this technique with other standard techniques.</abstract><cop>United States</cop><pub>IEEE</pub><doi>10.1109/PVSC.2011.6186278</doi><tpages>6</tpages></addata></record> |
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| identifier | ISSN: 0160-8371 |
| ispartof | 2011 37th IEEE Photovoltaic Specialists Conference, 2011, p.001680-001685 |
| issn | 0160-8371 |
| language | eng |
| recordid | cdi_ieee_primary_6186278 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Crystals DISTRIBUTION GRAIN BOUNDARIES GRAIN ORIENTATION grain orientations MATERIALS SCIENCE ORIENTATION rapid measurement Reflection Reflectivity Shape SILICON silicon wafers SOLAR ENERGY Surface texture Surface treatment TEXTURE |
| title | A new method for rapid measurement of orientations and sizes of grains in multicrystalline silicon wafers |
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