Amorphous-crystalline silicon heterojunction solar cells formed by the DC saddle field PECVD system: A deposition parameter optimization

Amorphous-crystalline silicon heterojunction solar cells formed by the DC saddle field PECVD system: A deposition parameter optimization

The DC Saddle Field PECVD system was used to deposit hydrogenated amorphous silicon (a-Si:H) layers for high efficiency amorphous-crystalline silicon heterojunction (ACSHJ) solar cells. The plasma controlling parameters; including the chamber pressure, gas phase dopant concentration for the p-type a...

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Hauptverfasser: Leong, K. R., Gougam, A. B., Bahardoust, B., Wing Yin Kwong, Kosteski, T., Yeghikyan, D., Zukotynski, S., Kherani, N. P.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Anodes
Cathodes
Epitaxial growth
Metals
Photovoltaic cells
Substrates
Temperature measurement
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creator Leong, K. R.
Gougam, A. B.
Bahardoust, B.
Wing Yin Kwong
Kosteski, T.
Yeghikyan, D.
Zukotynski, S.
Kherani, N. P.
description The DC Saddle Field PECVD system was used to deposit hydrogenated amorphous silicon (a-Si:H) layers for high efficiency amorphous-crystalline silicon heterojunction (ACSHJ) solar cells. The plasma controlling parameters; including the chamber pressure, gas phase dopant concentration for the p-type a-Si:H (a-Si:H(p + )) emitter, and substrate temperature were varied. The substrate temperature was found to be a critical parameter for the deposition of intrinsic a-Si:H as epitaxial formation can occur with just a temperature increase of 10°C. The processing capabilities have been developed to construct ACSHJ solar cells with 15.5% conversion efficiency for a 4.2 cm 2 area.
doi_str_mv 10.1109/PVSC.2011.6186238
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subjects Anodes
Cathodes
Epitaxial growth
Metals
Photovoltaic cells
Substrates
Temperature measurement
title Amorphous-crystalline silicon heterojunction solar cells formed by the DC saddle field PECVD system: A deposition parameter optimization
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