IGBT module with user accessible on-chip current and temperature sensors
This paper describes the characteristics of a new power module having user accessible on-chip temperature and current sensing features. Temperature sensing is accomplished by measuring the forward voltage drop of a string of diodes fabricated on the IGBT chip's surface. Current sensing is accom...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 181 |
|---|---|
| container_issue | |
| container_start_page | 176 |
| container_title | |
| container_volume | |
| creator | Motto, E. R. Donlon, J. F. |
| description | This paper describes the characteristics of a new power module having user accessible on-chip temperature and current sensing features. Temperature sensing is accomplished by measuring the forward voltage drop of a string of diodes fabricated on the IGBT chip's surface. Current sensing is accomplished using a current mirror structure that diverts a small portion of the main emitter current to an auxiliary "sense" emitter. The on-chip sensing features are directly accessible to the end user enabling control and protection to be tailored to the specific needs of the intended application. The new module also features a unique transfer molded structure that is designed to function as a "known-good" building block for use in a wide range of power electronic assemblies. |
| doi_str_mv | 10.1109/APEC.2012.6165816 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_6165816</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6165816</ieee_id><sourcerecordid>6165816</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-f3c6cb19e5ad4dec18d532180d25018687c99e651154ab8d880c55240618c493</originalsourceid><addsrcrecordid>eNo1kMtqAjEYRtMbdLQ-QOkmLxCbP_csrVgVhHbhXmLyi1N0ZkhmKH37FrSrD86Bs_gIeQY-BeD-dfa5mE8FBzE1YLQDc0NGoLS1IMCoW1IJZTkzRtk7MvHW_Tvt70kFXDkmpFSPZFTKF-dCWjAVWa2Xb1t6btNwQvpd90c6FMw0xIil1Ps_2DYsHuuOxiFnbHoamkR7PHeYQz9kpAWb0ubyRB4O4VRwct0x2b4vtvMV23ws1_PZhtVgdc8OMpq4B486JJUwgktaCnA8Cc3BGWej92g0gFZh75JzPGotFDfgovJyTF4u2RoRd12uzyH_7K6HyF-OQU8w</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>IGBT module with user accessible on-chip current and temperature sensors</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Motto, E. R. ; Donlon, J. F.</creator><creatorcontrib>Motto, E. R. ; Donlon, J. F.</creatorcontrib><description>This paper describes the characteristics of a new power module having user accessible on-chip temperature and current sensing features. Temperature sensing is accomplished by measuring the forward voltage drop of a string of diodes fabricated on the IGBT chip's surface. Current sensing is accomplished using a current mirror structure that diverts a small portion of the main emitter current to an auxiliary "sense" emitter. The on-chip sensing features are directly accessible to the end user enabling control and protection to be tailored to the specific needs of the intended application. The new module also features a unique transfer molded structure that is designed to function as a "known-good" building block for use in a wide range of power electronic assemblies.</description><identifier>ISSN: 1048-2334</identifier><identifier>ISBN: 9781457712159</identifier><identifier>ISBN: 1457712156</identifier><identifier>EISSN: 2470-6647</identifier><identifier>EISBN: 1457712164</identifier><identifier>EISBN: 9781457712142</identifier><identifier>EISBN: 9781457712166</identifier><identifier>EISBN: 1457712148</identifier><identifier>DOI: 10.1109/APEC.2012.6165816</identifier><language>eng</language><publisher>IEEE</publisher><subject>Assembly ; Electric vehicle inverter ; Insulated gate bipolar transistors ; Temperature measurement ; Temperature sensors ; Thermal conductivity ; Transfer molded module ; Wires</subject><ispartof>2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and Exposition (APEC), 2012, p.176-181</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6165816$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,777,781,786,787,2052,27906,54901</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6165816$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Motto, E. R.</creatorcontrib><creatorcontrib>Donlon, J. F.</creatorcontrib><title>IGBT module with user accessible on-chip current and temperature sensors</title><title>2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and Exposition (APEC)</title><addtitle>APEC</addtitle><description>This paper describes the characteristics of a new power module having user accessible on-chip temperature and current sensing features. Temperature sensing is accomplished by measuring the forward voltage drop of a string of diodes fabricated on the IGBT chip's surface. Current sensing is accomplished using a current mirror structure that diverts a small portion of the main emitter current to an auxiliary "sense" emitter. The on-chip sensing features are directly accessible to the end user enabling control and protection to be tailored to the specific needs of the intended application. The new module also features a unique transfer molded structure that is designed to function as a "known-good" building block for use in a wide range of power electronic assemblies.</description><subject>Assembly</subject><subject>Electric vehicle inverter</subject><subject>Insulated gate bipolar transistors</subject><subject>Temperature measurement</subject><subject>Temperature sensors</subject><subject>Thermal conductivity</subject><subject>Transfer molded module</subject><subject>Wires</subject><issn>1048-2334</issn><issn>2470-6647</issn><isbn>9781457712159</isbn><isbn>1457712156</isbn><isbn>1457712164</isbn><isbn>9781457712142</isbn><isbn>9781457712166</isbn><isbn>1457712148</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2012</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1kMtqAjEYRtMbdLQ-QOkmLxCbP_csrVgVhHbhXmLyi1N0ZkhmKH37FrSrD86Bs_gIeQY-BeD-dfa5mE8FBzE1YLQDc0NGoLS1IMCoW1IJZTkzRtk7MvHW_Tvt70kFXDkmpFSPZFTKF-dCWjAVWa2Xb1t6btNwQvpd90c6FMw0xIil1Ps_2DYsHuuOxiFnbHoamkR7PHeYQz9kpAWb0ubyRB4O4VRwct0x2b4vtvMV23ws1_PZhtVgdc8OMpq4B486JJUwgktaCnA8Cc3BGWej92g0gFZh75JzPGotFDfgovJyTF4u2RoRd12uzyH_7K6HyF-OQU8w</recordid><startdate>201202</startdate><enddate>201202</enddate><creator>Motto, E. R.</creator><creator>Donlon, J. F.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201202</creationdate><title>IGBT module with user accessible on-chip current and temperature sensors</title><author>Motto, E. R. ; Donlon, J. F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-f3c6cb19e5ad4dec18d532180d25018687c99e651154ab8d880c55240618c493</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Assembly</topic><topic>Electric vehicle inverter</topic><topic>Insulated gate bipolar transistors</topic><topic>Temperature measurement</topic><topic>Temperature sensors</topic><topic>Thermal conductivity</topic><topic>Transfer molded module</topic><topic>Wires</topic><toplevel>online_resources</toplevel><creatorcontrib>Motto, E. R.</creatorcontrib><creatorcontrib>Donlon, J. F.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Motto, E. R.</au><au>Donlon, J. F.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>IGBT module with user accessible on-chip current and temperature sensors</atitle><btitle>2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and Exposition (APEC)</btitle><stitle>APEC</stitle><date>2012-02</date><risdate>2012</risdate><spage>176</spage><epage>181</epage><pages>176-181</pages><issn>1048-2334</issn><eissn>2470-6647</eissn><isbn>9781457712159</isbn><isbn>1457712156</isbn><eisbn>1457712164</eisbn><eisbn>9781457712142</eisbn><eisbn>9781457712166</eisbn><eisbn>1457712148</eisbn><abstract>This paper describes the characteristics of a new power module having user accessible on-chip temperature and current sensing features. Temperature sensing is accomplished by measuring the forward voltage drop of a string of diodes fabricated on the IGBT chip's surface. Current sensing is accomplished using a current mirror structure that diverts a small portion of the main emitter current to an auxiliary "sense" emitter. The on-chip sensing features are directly accessible to the end user enabling control and protection to be tailored to the specific needs of the intended application. The new module also features a unique transfer molded structure that is designed to function as a "known-good" building block for use in a wide range of power electronic assemblies.</abstract><pub>IEEE</pub><doi>10.1109/APEC.2012.6165816</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1048-2334 |
| ispartof | 2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and Exposition (APEC), 2012, p.176-181 |
| issn | 1048-2334 2470-6647 |
| language | eng |
| recordid | cdi_ieee_primary_6165816 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Assembly Electric vehicle inverter Insulated gate bipolar transistors Temperature measurement Temperature sensors Thermal conductivity Transfer molded module Wires |
| title | IGBT module with user accessible on-chip current and temperature sensors |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-18T14%3A59%3A14IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=IGBT%20module%20with%20user%20accessible%20on-chip%20current%20and%20temperature%20sensors&rft.btitle=2012%20Twenty-Seventh%20Annual%20IEEE%20Applied%20Power%20Electronics%20Conference%20and%20Exposition%20(APEC)&rft.au=Motto,%20E.%20R.&rft.date=2012-02&rft.spage=176&rft.epage=181&rft.pages=176-181&rft.issn=1048-2334&rft.eissn=2470-6647&rft.isbn=9781457712159&rft.isbn_list=1457712156&rft_id=info:doi/10.1109/APEC.2012.6165816&rft_dat=%3Cieee_6IE%3E6165816%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=1457712164&rft.eisbn_list=9781457712142&rft.eisbn_list=9781457712166&rft.eisbn_list=1457712148&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=6165816&rfr_iscdi=true |