Effect of two types of surface sites on the characteristics of Si/sub 3/N/sub 4/-gate pH-ISFET's

Based on the site-binding model, the effects of two types of surface-sites (namely, silanol site and amine site) and their ratio on the characteristics of Si/sub 3/N/sub 4/-gate pH-ISFET are discussed. As the ratio /spl beta/ of silanol sites to amine sites is about 7/3, the maximum of the sensitivi...

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Hauptverfasser:	Meng-Nian Niu, Xin-Fang Ding, Qin-Yi Tong
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Boltzmann equation Chemical processes FETs Insulation Microelectronics Protons Sensor phenomena and characterization Silicon Stability Surface treatment
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creator	Meng-Nian Niu Xin-Fang Ding Qin-Yi Tong
description	Based on the site-binding model, the effects of two types of surface-sites (namely, silanol site and amine site) and their ratio on the characteristics of Si/sub 3/N/sub 4/-gate pH-ISFET are discussed. As the ratio /spl beta/ of silanol sites to amine sites is about 7/3, the maximum of the sensitivity of electrolyte-insulator (E-I) interfacial potential versus pH value, as well as of the range of linear response are theoretically obtained. The stability of pH-ISFET devices is partially determined by the total number of the two types of surface-sites and their ratio. The theoretical results are supported by experimental results.
doi_str_mv	10.1109/SMELEC.1996.616480
format	Conference Proceeding
fullrecord	<record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_616480</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>616480</ieee_id><sourcerecordid>616480</sourcerecordid><originalsourceid>FETCH-ieee_primary_6164803</originalsourceid><addsrcrecordid>eNp9jj0LwjAYhAMi-PkHOmVzapuQWtO5RBTUpe4awxsbUVvyRsR_7-fsLcc9d8MREnGWcM6KtFqrlSoTXhR5kvM8k6xDBmwmmRBCStkjY8QTeymb8hmXfbJX1oIJtLE03BsaHi3gO-DNW22AogtvcKWhBmpq7bUJ4B0GZz67yqV4O1CRbj6epfFRB6DtIl5Wc7Wd4Ih0rT4jjH8-JNGLl4vYAcCu9e6i_WP3_Sr-lk87gkH8</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Effect of two types of surface sites on the characteristics of Si/sub 3/N/sub 4/-gate pH-ISFET's</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Meng-Nian Niu ; Xin-Fang Ding ; Qin-Yi Tong</creator><creatorcontrib>Meng-Nian Niu ; Xin-Fang Ding ; Qin-Yi Tong</creatorcontrib><description>Based on the site-binding model, the effects of two types of surface-sites (namely, silanol site and amine site) and their ratio on the characteristics of Si/sub 3/N/sub 4/-gate pH-ISFET are discussed. As the ratio /spl beta/ of silanol sites to amine sites is about 7/3, the maximum of the sensitivity of electrolyte-insulator (E-I) interfacial potential versus pH value, as well as of the range of linear response are theoretically obtained. The stability of pH-ISFET devices is partially determined by the total number of the two types of surface-sites and their ratio. The theoretical results are supported by experimental results.</description><identifier>ISBN: 0780333888</identifier><identifier>ISBN: 9780780333888</identifier><identifier>DOI: 10.1109/SMELEC.1996.616480</identifier><language>eng</language><publisher>IEEE</publisher><subject>Boltzmann equation ; Chemical processes ; FETs ; Insulation ; Microelectronics ; Protons ; Sensor phenomena and characterization ; Silicon ; Stability ; Surface treatment</subject><ispartof>ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings, 1996, p.189-193</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/616480$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,4036,4037,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/616480$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Meng-Nian Niu</creatorcontrib><creatorcontrib>Xin-Fang Ding</creatorcontrib><creatorcontrib>Qin-Yi Tong</creatorcontrib><title>Effect of two types of surface sites on the characteristics of Si/sub 3/N/sub 4/-gate pH-ISFET's</title><title>ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings</title><addtitle>SMELEC</addtitle><description>Based on the site-binding model, the effects of two types of surface-sites (namely, silanol site and amine site) and their ratio on the characteristics of Si/sub 3/N/sub 4/-gate pH-ISFET are discussed. As the ratio /spl beta/ of silanol sites to amine sites is about 7/3, the maximum of the sensitivity of electrolyte-insulator (E-I) interfacial potential versus pH value, as well as of the range of linear response are theoretically obtained. The stability of pH-ISFET devices is partially determined by the total number of the two types of surface-sites and their ratio. The theoretical results are supported by experimental results.</description><subject>Boltzmann equation</subject><subject>Chemical processes</subject><subject>FETs</subject><subject>Insulation</subject><subject>Microelectronics</subject><subject>Protons</subject><subject>Sensor phenomena and characterization</subject><subject>Silicon</subject><subject>Stability</subject><subject>Surface treatment</subject><isbn>0780333888</isbn><isbn>9780780333888</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1996</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9jj0LwjAYhAMi-PkHOmVzapuQWtO5RBTUpe4awxsbUVvyRsR_7-fsLcc9d8MREnGWcM6KtFqrlSoTXhR5kvM8k6xDBmwmmRBCStkjY8QTeymb8hmXfbJX1oIJtLE03BsaHi3gO-DNW22AogtvcKWhBmpq7bUJ4B0GZz67yqV4O1CRbj6epfFRB6DtIl5Wc7Wd4Ih0rT4jjH8-JNGLl4vYAcCu9e6i_WP3_Sr-lk87gkH8</recordid><startdate>1996</startdate><enddate>1996</enddate><creator>Meng-Nian Niu</creator><creator>Xin-Fang Ding</creator><creator>Qin-Yi Tong</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1996</creationdate><title>Effect of two types of surface sites on the characteristics of Si/sub 3/N/sub 4/-gate pH-ISFET's</title><author>Meng-Nian Niu ; Xin-Fang Ding ; Qin-Yi Tong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_6164803</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1996</creationdate><topic>Boltzmann equation</topic><topic>Chemical processes</topic><topic>FETs</topic><topic>Insulation</topic><topic>Microelectronics</topic><topic>Protons</topic><topic>Sensor phenomena and characterization</topic><topic>Silicon</topic><topic>Stability</topic><topic>Surface treatment</topic><toplevel>online_resources</toplevel><creatorcontrib>Meng-Nian Niu</creatorcontrib><creatorcontrib>Xin-Fang Ding</creatorcontrib><creatorcontrib>Qin-Yi Tong</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Meng-Nian Niu</au><au>Xin-Fang Ding</au><au>Qin-Yi Tong</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Effect of two types of surface sites on the characteristics of Si/sub 3/N/sub 4/-gate pH-ISFET's</atitle><btitle>ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings</btitle><stitle>SMELEC</stitle><date>1996</date><risdate>1996</risdate><spage>189</spage><epage>193</epage><pages>189-193</pages><isbn>0780333888</isbn><isbn>9780780333888</isbn><abstract>Based on the site-binding model, the effects of two types of surface-sites (namely, silanol site and amine site) and their ratio on the characteristics of Si/sub 3/N/sub 4/-gate pH-ISFET are discussed. As the ratio /spl beta/ of silanol sites to amine sites is about 7/3, the maximum of the sensitivity of electrolyte-insulator (E-I) interfacial potential versus pH value, as well as of the range of linear response are theoretically obtained. The stability of pH-ISFET devices is partially determined by the total number of the two types of surface-sites and their ratio. The theoretical results are supported by experimental results.</abstract><pub>IEEE</pub><doi>10.1109/SMELEC.1996.616480</doi></addata></record>
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identifier	ISBN: 0780333888
ispartof	ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings, 1996, p.189-193
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language	eng
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source	IEEE Electronic Library (IEL) Conference Proceedings
subjects	Boltzmann equation Chemical processes FETs Insulation Microelectronics Protons Sensor phenomena and characterization Silicon Stability Surface treatment
title	Effect of two types of surface sites on the characteristics of Si/sub 3/N/sub 4/-gate pH-ISFET's
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-09T06%3A51%3A02IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Effect%20of%20two%20types%20of%20surface%20sites%20on%20the%20characteristics%20of%20Si/sub%203/N/sub%204/-gate%20pH-ISFET's&rft.btitle=ICSE%20'96.%201996%20IEEE%20International%20Conference%20on%20Semiconductor%20Electronics.%20Proceedings&rft.au=Meng-Nian%20Niu&rft.date=1996&rft.spage=189&rft.epage=193&rft.pages=189-193&rft.isbn=0780333888&rft.isbn_list=9780780333888&rft_id=info:doi/10.1109/SMELEC.1996.616480&rft_dat=%3Cieee_6IE%3E616480%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=616480&rfr_iscdi=true