Effect of field dependent mobility on the analytical modeling of emitter saturation current of a silicon solar cell

In this paper an analytical model of emitter saturation current of a silicon solar cell has been developed to show the effects of field dependent carrier mobility and of both doping dependent SRH and Auger recombination mechanisms in a non-uniformly doped emitter. In developing this model the doping...

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Bibliographische Detailangaben

Hauptverfasser:	Saha, S. K., Ferdaus, S. I., Farhan, A. M., Reba, S. I., Chowdhury, M. I. B.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Analytical models Auger Recombination Doping Emitter Saturation Current Field Dependent Mobility Mathematical model Photovoltaic cells Radiative recombination Semiconductor process modeling Silicon SRH Recombination
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