Precise comparison of two-dimensional dopant profiles measured by electron holography and scanning capacitance microscopy

Precise comparison of two-dimensional dopant profiles measured by electron holography and scanning capacitance microscopy

Detailed comparison of electron holography and scanning capacitance microscopy techniques for the 2D dopant profiling was carried out with using the same multilayered p-n junction specimen. The dopant profiles obtained from two methods are in good agreement with each other. It demonstrates that reli...

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Bibliographische Detailangaben
Hauptverfasser: Jun-Mo Yang, Shaislamov, U., Moon Seop Hyun, Jung Ho Yoo, Jeoung Woo Kim, Noh-Yeal Kwak, Won Kim, Joong Keun Park
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Argon
Atmospheric measurements
Image resolution
Junctions
Nanoscale devices
Particle measurements
Thickness measurement
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Beschreibung
Zusammenfassung:Detailed comparison of electron holography and scanning capacitance microscopy techniques for the 2D dopant profiling was carried out with using the same multilayered p-n junction specimen. The dopant profiles obtained from two methods are in good agreement with each other. It demonstrates that reliability of dopant profile measurement can be increased through precise comparison of 2D profiles obtained from various techniques.
DOI:10.1109/NMDC.2011.6155352