Embedded interconnect and electrical isolation for high-aspect-ratio, SOI inertial instruments
A new technique for providing both electrical isolation and embedded interconnect to SOI-based, single crystal silicon, inertial sensors is described. This technology allows fabrication of high-aspect-ratio, in-plane, capacitive sensors with improved sensitivity suitable for integration with on-chip...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 640 vol.1 |
|---|---|
| container_issue | |
| container_start_page | 637 |
| container_title | |
| container_volume | 1 |
| creator | Brosnihan, T.J. Bustillo, J.M. Pisano, A.P. Howe, R.T. |
| description | A new technique for providing both electrical isolation and embedded interconnect to SOI-based, single crystal silicon, inertial sensors is described. This technology allows fabrication of high-aspect-ratio, in-plane, capacitive sensors with improved sensitivity suitable for integration with on-chip electronics. Various 45 /spl mu/m-tall MEMS devices with electrical isolation from the silicon substrate and embedded interconnect have been fabricated and tested. The embedded interconnect and electrical isolation enable truly integrated high-aspect-ratio MEMS sensors, and alternatively simplifies packaging in monolithic two-chip approaches. By extending the demonstrated technique to aluminum interconnect, only two additional masks are required to convert a CMOS process into a fully integrated MEMS technology at the incremental cost of an SOI starting material. |
| doi_str_mv | 10.1109/SENSOR.1997.613732 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_613732</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>613732</ieee_id><sourcerecordid>613732</sourcerecordid><originalsourceid>FETCH-LOGICAL-i104t-fe27430b60b987f1249f78bf4d5c1524211a5d73508338ae68e309933df998e53</originalsourceid><addsrcrecordid>eNotUF1LxDAQDIignP0D95QfYM98NE3yKEfVg8OC1VePtNl4kTY9kvjgv7fHuSzMsDMMzCK0pmRDKdEPXfPatW8bqrXc1JRLzq5QoaUiy3KumK5vUJHSN1mmEoJKcos-m6kHa8FiHzLEYQ4BhoxNsBjGhUU_mBH7NI8m-zlgN0d89F_H0qTTIpfxfL7HXbtbAiBmf3aHlOPPBCGnO3TtzJig-McV-nhq3rcv5b593m0f96WnpMqlAyYrTvqa9FpJR1mlnVS9q6wYqGAVo9QIK7kgailioFbAidacW6e1AsFXaH3J9QBwOEU_mfh7uDyB_wGDFVMK</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Embedded interconnect and electrical isolation for high-aspect-ratio, SOI inertial instruments</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Brosnihan, T.J. ; Bustillo, J.M. ; Pisano, A.P. ; Howe, R.T.</creator><creatorcontrib>Brosnihan, T.J. ; Bustillo, J.M. ; Pisano, A.P. ; Howe, R.T.</creatorcontrib><description>A new technique for providing both electrical isolation and embedded interconnect to SOI-based, single crystal silicon, inertial sensors is described. This technology allows fabrication of high-aspect-ratio, in-plane, capacitive sensors with improved sensitivity suitable for integration with on-chip electronics. Various 45 /spl mu/m-tall MEMS devices with electrical isolation from the silicon substrate and embedded interconnect have been fabricated and tested. The embedded interconnect and electrical isolation enable truly integrated high-aspect-ratio MEMS sensors, and alternatively simplifies packaging in monolithic two-chip approaches. By extending the demonstrated technique to aluminum interconnect, only two additional masks are required to convert a CMOS process into a fully integrated MEMS technology at the incremental cost of an SOI starting material.</description><identifier>ISBN: 9780780338296</identifier><identifier>ISBN: 0780338294</identifier><identifier>DOI: 10.1109/SENSOR.1997.613732</identifier><language>eng</language><publisher>IEEE</publisher><subject>Aluminum ; Capacitive sensors ; Electronics packaging ; Fabrication ; Isolation technology ; Microelectromechanical devices ; Micromechanical devices ; Sensor phenomena and characterization ; Silicon ; Testing</subject><ispartof>Proceedings of International Solid State Sensors and Actuators Conference (Transducers '97), 1997, Vol.1, p.637-640 vol.1</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/613732$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/613732$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Brosnihan, T.J.</creatorcontrib><creatorcontrib>Bustillo, J.M.</creatorcontrib><creatorcontrib>Pisano, A.P.</creatorcontrib><creatorcontrib>Howe, R.T.</creatorcontrib><title>Embedded interconnect and electrical isolation for high-aspect-ratio, SOI inertial instruments</title><title>Proceedings of International Solid State Sensors and Actuators Conference (Transducers '97)</title><addtitle>SENSOR</addtitle><description>A new technique for providing both electrical isolation and embedded interconnect to SOI-based, single crystal silicon, inertial sensors is described. This technology allows fabrication of high-aspect-ratio, in-plane, capacitive sensors with improved sensitivity suitable for integration with on-chip electronics. Various 45 /spl mu/m-tall MEMS devices with electrical isolation from the silicon substrate and embedded interconnect have been fabricated and tested. The embedded interconnect and electrical isolation enable truly integrated high-aspect-ratio MEMS sensors, and alternatively simplifies packaging in monolithic two-chip approaches. By extending the demonstrated technique to aluminum interconnect, only two additional masks are required to convert a CMOS process into a fully integrated MEMS technology at the incremental cost of an SOI starting material.</description><subject>Aluminum</subject><subject>Capacitive sensors</subject><subject>Electronics packaging</subject><subject>Fabrication</subject><subject>Isolation technology</subject><subject>Microelectromechanical devices</subject><subject>Micromechanical devices</subject><subject>Sensor phenomena and characterization</subject><subject>Silicon</subject><subject>Testing</subject><isbn>9780780338296</isbn><isbn>0780338294</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1997</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotUF1LxDAQDIignP0D95QfYM98NE3yKEfVg8OC1VePtNl4kTY9kvjgv7fHuSzMsDMMzCK0pmRDKdEPXfPatW8bqrXc1JRLzq5QoaUiy3KumK5vUJHSN1mmEoJKcos-m6kHa8FiHzLEYQ4BhoxNsBjGhUU_mBH7NI8m-zlgN0d89F_H0qTTIpfxfL7HXbtbAiBmf3aHlOPPBCGnO3TtzJig-McV-nhq3rcv5b593m0f96WnpMqlAyYrTvqa9FpJR1mlnVS9q6wYqGAVo9QIK7kgailioFbAidacW6e1AsFXaH3J9QBwOEU_mfh7uDyB_wGDFVMK</recordid><startdate>1997</startdate><enddate>1997</enddate><creator>Brosnihan, T.J.</creator><creator>Bustillo, J.M.</creator><creator>Pisano, A.P.</creator><creator>Howe, R.T.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1997</creationdate><title>Embedded interconnect and electrical isolation for high-aspect-ratio, SOI inertial instruments</title><author>Brosnihan, T.J. ; Bustillo, J.M. ; Pisano, A.P. ; Howe, R.T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i104t-fe27430b60b987f1249f78bf4d5c1524211a5d73508338ae68e309933df998e53</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1997</creationdate><topic>Aluminum</topic><topic>Capacitive sensors</topic><topic>Electronics packaging</topic><topic>Fabrication</topic><topic>Isolation technology</topic><topic>Microelectromechanical devices</topic><topic>Micromechanical devices</topic><topic>Sensor phenomena and characterization</topic><topic>Silicon</topic><topic>Testing</topic><toplevel>online_resources</toplevel><creatorcontrib>Brosnihan, T.J.</creatorcontrib><creatorcontrib>Bustillo, J.M.</creatorcontrib><creatorcontrib>Pisano, A.P.</creatorcontrib><creatorcontrib>Howe, R.T.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library Online</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Brosnihan, T.J.</au><au>Bustillo, J.M.</au><au>Pisano, A.P.</au><au>Howe, R.T.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Embedded interconnect and electrical isolation for high-aspect-ratio, SOI inertial instruments</atitle><btitle>Proceedings of International Solid State Sensors and Actuators Conference (Transducers '97)</btitle><stitle>SENSOR</stitle><date>1997</date><risdate>1997</risdate><volume>1</volume><spage>637</spage><epage>640 vol.1</epage><pages>637-640 vol.1</pages><isbn>9780780338296</isbn><isbn>0780338294</isbn><abstract>A new technique for providing both electrical isolation and embedded interconnect to SOI-based, single crystal silicon, inertial sensors is described. This technology allows fabrication of high-aspect-ratio, in-plane, capacitive sensors with improved sensitivity suitable for integration with on-chip electronics. Various 45 /spl mu/m-tall MEMS devices with electrical isolation from the silicon substrate and embedded interconnect have been fabricated and tested. The embedded interconnect and electrical isolation enable truly integrated high-aspect-ratio MEMS sensors, and alternatively simplifies packaging in monolithic two-chip approaches. By extending the demonstrated technique to aluminum interconnect, only two additional masks are required to convert a CMOS process into a fully integrated MEMS technology at the incremental cost of an SOI starting material.</abstract><pub>IEEE</pub><doi>10.1109/SENSOR.1997.613732</doi></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISBN: 9780780338296 |
| ispartof | Proceedings of International Solid State Sensors and Actuators Conference (Transducers '97), 1997, Vol.1, p.637-640 vol.1 |
| issn | |
| language | eng |
| recordid | cdi_ieee_primary_613732 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Aluminum Capacitive sensors Electronics packaging Fabrication Isolation technology Microelectromechanical devices Micromechanical devices Sensor phenomena and characterization Silicon Testing |
| title | Embedded interconnect and electrical isolation for high-aspect-ratio, SOI inertial instruments |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-20T21%3A06%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Embedded%20interconnect%20and%20electrical%20isolation%20for%20high-aspect-ratio,%20SOI%20inertial%20instruments&rft.btitle=Proceedings%20of%20International%20Solid%20State%20Sensors%20and%20Actuators%20Conference%20(Transducers%20'97)&rft.au=Brosnihan,%20T.J.&rft.date=1997&rft.volume=1&rft.spage=637&rft.epage=640%20vol.1&rft.pages=637-640%20vol.1&rft.isbn=9780780338296&rft.isbn_list=0780338294&rft_id=info:doi/10.1109/SENSOR.1997.613732&rft_dat=%3Cieee_6IE%3E613732%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=613732&rfr_iscdi=true |