MOCVD GST for high speed and low current Phase Change Memory

MOCVD (Metal-organic Chemical Vapor Deposition) has been investigated extensively to achieve smooth and conformal deposition of GST (GeSbTe) films. The studies are focused on filling confined cells as well as improving material properties for high performance PCM (Phase Change Memory) applications....

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Zheng, J. F., Chen, P., Hunks, W., Li, W., Cleary, J., Reed, J., Ricker, J., Czubatyj, W., Schell, C., Sandoval, R., Hudgens, S., Dennison, C., Lowrey, T.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	DRAM GST Metals MOCVD Nonvolatile PCM Performance evaluation Phase change materials Resistance Temperature distribution
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