Investigation of self boosting disturbance induced by channel coupling in 3D stacked NAND flash memory

As the needs for high density NAND flash memory have been dramatically increasing, the memory density has also increased by scaling down the technology node. As the scaling of NAND flash memory is accelerated, the short channel effect is more severe and further scaling down is faced with process lim...

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Bibliographische Detailangaben

Hauptverfasser:	Wandong Kim, Yoon Kim, Se-Hwan Park, Joo Yun Seo, Do-Bin Kim, Seung-Hyun Kim, Byung-Gook Park
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Boosting Couplings Flash memory Logic gates Nanostructures Three dimensional displays Very large scale integration
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