Submicron ambipolar nanocrystalline-silicon TFTs with high-K gate dielectrics

Thin-film transistors (TFTs) that use hydrogenated nanocrystalline-silicon (nc-Si) as the channel material are favorable for use in neuromorphic circuits [1] as well as in flat-panel displays. Nanocrystalline-Si can be deposited over large areas at low temperatures, thus enabling three-dimensional i...

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Bibliographische Detailangaben

Hauptverfasser:	Subramaniam, A., Cantley, K. D., Chapman, R. A., Stiegler, H. J., Vogel, E. M.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Charge carrier processes Dielectrics Hafnium compounds Inverters Logic gates Thin film transistors Threshold voltage
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