Metamorphic GaAsP and InGaP Solar Cells on GaAs

We have investigated wide-bandgap, metamorphic GaAs 1- x P x and In y Ga 1- y P solar cells on GaAs as potential subcell materials for future 4-6 junction devices. We identified and characterized morphological defects in tensile GaAs 1- x P x graded buffers that lead to a local reduction in carrier...

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Veröffentlicht in:	IEEE journal of photovoltaics 2012-01, Vol.2 (1), p.56-61
Hauptverfasser:	Tomasulo, S., Yaung, K. N., Lee, M. L.
Format:	Artikel
Sprache:	eng
Schlagworte:	Epitaxy GaAsP Gallium arsenide InGaP metamorphic Molecular beam epitaxial growth Photonic band gap Photovoltaic cells Photovoltaic systems
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