Exploration of device-circuit interactions in FinFET-based memories for sub-15nm technologies using a mixed mode quantum simulation framework: Atoms to systems

Exploration of device-circuit interactions in FinFET-based memories for sub-15nm technologies using a mixed mode quantum simulation framework: Atoms to systems

We compare independent gate FinFETs, FinFETs with different fin orientations and asymmetric drain spacer extension FinFETs to analyze the implications of each for memory design in sub-15nm technologies. A mixed mode simulation framework based on ballistic NEGF models for FinFETs and circuit simulati...

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Hauptverfasser: Gupta, S. K., Choday, S. H., Roy, K.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Analytical models
Degradation
FinFETs
Integrated circuit modeling
Logic gates
Mathematical model
Random access memory
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creator Gupta, S. K.
Choday, S. H.
Roy, K.
description We compare independent gate FinFETs, FinFETs with different fin orientations and asymmetric drain spacer extension FinFETs to analyze the implications of each for memory design in sub-15nm technologies. A mixed mode simulation framework based on ballistic NEGF models for FinFETs and circuit simulations in SPICE is developed for the analysis.
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Analytical models
Degradation
FinFETs
Integrated circuit modeling
Logic gates
Mathematical model
Random access memory
title Exploration of device-circuit interactions in FinFET-based memories for sub-15nm technologies using a mixed mode quantum simulation framework: Atoms to systems
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