Improved high-k/metal gate lifetime via improved SILC understanding and mitigation

For the first time, we identify key factors impacting SILC through a comprehensive reliability study for high-k/metal gate nMOSFET with several mitigating process changes. SILC is increasingly important because higher SILC can distort time-dependent dielectric breakdown (TDDB) lifetime extraction. W...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Minseok Jo, Chang Young Kang, Huang, Jeff, Bersuker, G., Young, C., Kirsch, P., Jammy, R.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Electric breakdown Hafnium oxide High K dielectric materials Logic gates Stress
Online-Zugang:	Volltext bestellen
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