Improved high-k/metal gate lifetime via improved SILC understanding and mitigation
For the first time, we identify key factors impacting SILC through a comprehensive reliability study for high-k/metal gate nMOSFET with several mitigating process changes. SILC is increasingly important because higher SILC can distort time-dependent dielectric breakdown (TDDB) lifetime extraction. W...
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| creator | Minseok Jo Chang Young Kang Huang, Jeff Bersuker, G. Young, C. Kirsch, P. Jammy, R. |
| description | For the first time, we identify key factors impacting SILC through a comprehensive reliability study for high-k/metal gate nMOSFET with several mitigating process changes. SILC is increasingly important because higher SILC can distort time-dependent dielectric breakdown (TDDB) lifetime extraction. We find that high-k bulk layer and interfacial layer both contribute to SILC characteristics. We propose a direction to SILC reduction, thereby improving device lifetime. |
| doi_str_mv | 10.1109/IEDM.2011.6131578 |
| format | Conference Proceeding |
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| identifier | ISSN: 0163-1918 |
| ispartof | 2011 International Electron Devices Meeting, 2011, p.18.3.1-18.3.4 |
| issn | 0163-1918 2156-017X |
| language | eng |
| recordid | cdi_ieee_primary_6131578 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Electric breakdown Hafnium oxide High K dielectric materials Logic gates Stress |
| title | Improved high-k/metal gate lifetime via improved SILC understanding and mitigation |
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