Electrically switchable graphene photo-sensor using phase-change gate filter for non-volatile data storage application with high-speed data writing and access

An electrically switchable graphene photo-sensor (SGPS) is proposed for multiple functional applications. SGPS is a dual-gate thin-film transistor with a graphene channel and a phase-change chalcogenide (GeSbTe) gate filter. This gate filter is switchable between the amorphous (optically transparent...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Gang Zhang, Tian-Zi Shen, Hua-Min Li, Dae-Yeong Lee, Chang-Ho Ra, Won Jong Yoo
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 2.5.4
container_issue
container_start_page 2.5.1
container_title
container_volume
creator Gang Zhang
Tian-Zi Shen
Hua-Min Li
Dae-Yeong Lee
Chang-Ho Ra
Won Jong Yoo
description An electrically switchable graphene photo-sensor (SGPS) is proposed for multiple functional applications. SGPS is a dual-gate thin-film transistor with a graphene channel and a phase-change chalcogenide (GeSbTe) gate filter. This gate filter is switchable between the amorphous (optically transparent) and crystalline (optically non-transparent) phases by applying the gate biases. When the gate filter is switched to the amorphous/crystalline (a/c) phases, the SGPS will/not yield photo-current (I pc ) under a constant light source. By detecting the presence of I pc , two data states can be read out so as to accomplish non-volatile data storage. SGPS can present a switching speed of ~50 ns between the a/c phases of GeSbTe and a data access speed as fast as 10 ns. SGPS shows very good 10-year data retention at 85°C and good endurance of >;10 6 switching cycles between the a/c phases of the GeSbTe gate filter.
doi_str_mv 10.1109/IEDM.2011.6131476
format Conference Proceeding
fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_6131476</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6131476</ieee_id><sourcerecordid>6131476</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-7fad54efc2e438414dc1c20d6ade3fad830ec77c95ffd24c46cc6b6a2cc82b493</originalsourceid><addsrcrecordid>eNo1kMtOwzAQRc1Loi39AMTGP-BiO34kS1QKVCpiAxK7aupMGqOQRLGh6s_wrRi1rEa69-hcaQi5FnwmBC9ul4v755nkQsyMyISy5oRMC5sLpa3lmmt5SkZSaMO4sO9nZPxfGH5ORlyYjIlC5JdkHMIH59LqQo_Iz6JBFwfvoGn2NOx8dDVsGqTbAfoaW6R93cWOBWxDN9Cv4NttiiAgS2C7TSBEpJVvIg60Skjbtey7ayD6ZCkhAg2xGyCR0PdNGoq-a2kaqmnttzULPWJ5AHeDj39-aEsKzmEIV-Sigibg9Hgn5O1h8Tp_YquXx-X8bsW8sDoyW0GpFVZOospyJVTphJO8NFBilro84-isdYWuqlIqp4xzZmNAOpfLjSqyCbk5eD0irvvBf8KwXx__nP0CidVyog</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Electrically switchable graphene photo-sensor using phase-change gate filter for non-volatile data storage application with high-speed data writing and access</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Gang Zhang ; Tian-Zi Shen ; Hua-Min Li ; Dae-Yeong Lee ; Chang-Ho Ra ; Won Jong Yoo</creator><creatorcontrib>Gang Zhang ; Tian-Zi Shen ; Hua-Min Li ; Dae-Yeong Lee ; Chang-Ho Ra ; Won Jong Yoo</creatorcontrib><description>An electrically switchable graphene photo-sensor (SGPS) is proposed for multiple functional applications. SGPS is a dual-gate thin-film transistor with a graphene channel and a phase-change chalcogenide (GeSbTe) gate filter. This gate filter is switchable between the amorphous (optically transparent) and crystalline (optically non-transparent) phases by applying the gate biases. When the gate filter is switched to the amorphous/crystalline (a/c) phases, the SGPS will/not yield photo-current (I pc ) under a constant light source. By detecting the presence of I pc , two data states can be read out so as to accomplish non-volatile data storage. SGPS can present a switching speed of ~50 ns between the a/c phases of GeSbTe and a data access speed as fast as 10 ns. SGPS shows very good 10-year data retention at 85°C and good endurance of &gt;;10 6 switching cycles between the a/c phases of the GeSbTe gate filter.</description><identifier>ISSN: 0163-1918</identifier><identifier>ISBN: 1457705060</identifier><identifier>ISBN: 9781457705069</identifier><identifier>EISSN: 2156-017X</identifier><identifier>EISBN: 9781457705052</identifier><identifier>EISBN: 1457705044</identifier><identifier>EISBN: 9781457705045</identifier><identifier>EISBN: 1457705052</identifier><identifier>DOI: 10.1109/IEDM.2011.6131476</identifier><language>eng</language><publisher>IEEE</publisher><subject>Indium tin oxide ; Logic gates ; Memory ; Optical filters ; Optical switches</subject><ispartof>2011 International Electron Devices Meeting, 2011, p.2.5.1-2.5.4</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6131476$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6131476$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Gang Zhang</creatorcontrib><creatorcontrib>Tian-Zi Shen</creatorcontrib><creatorcontrib>Hua-Min Li</creatorcontrib><creatorcontrib>Dae-Yeong Lee</creatorcontrib><creatorcontrib>Chang-Ho Ra</creatorcontrib><creatorcontrib>Won Jong Yoo</creatorcontrib><title>Electrically switchable graphene photo-sensor using phase-change gate filter for non-volatile data storage application with high-speed data writing and access</title><title>2011 International Electron Devices Meeting</title><addtitle>IEDM</addtitle><description>An electrically switchable graphene photo-sensor (SGPS) is proposed for multiple functional applications. SGPS is a dual-gate thin-film transistor with a graphene channel and a phase-change chalcogenide (GeSbTe) gate filter. This gate filter is switchable between the amorphous (optically transparent) and crystalline (optically non-transparent) phases by applying the gate biases. When the gate filter is switched to the amorphous/crystalline (a/c) phases, the SGPS will/not yield photo-current (I pc ) under a constant light source. By detecting the presence of I pc , two data states can be read out so as to accomplish non-volatile data storage. SGPS can present a switching speed of ~50 ns between the a/c phases of GeSbTe and a data access speed as fast as 10 ns. SGPS shows very good 10-year data retention at 85°C and good endurance of &gt;;10 6 switching cycles between the a/c phases of the GeSbTe gate filter.</description><subject>Indium tin oxide</subject><subject>Logic gates</subject><subject>Memory</subject><subject>Optical filters</subject><subject>Optical switches</subject><issn>0163-1918</issn><issn>2156-017X</issn><isbn>1457705060</isbn><isbn>9781457705069</isbn><isbn>9781457705052</isbn><isbn>1457705044</isbn><isbn>9781457705045</isbn><isbn>1457705052</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2011</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1kMtOwzAQRc1Loi39AMTGP-BiO34kS1QKVCpiAxK7aupMGqOQRLGh6s_wrRi1rEa69-hcaQi5FnwmBC9ul4v755nkQsyMyISy5oRMC5sLpa3lmmt5SkZSaMO4sO9nZPxfGH5ORlyYjIlC5JdkHMIH59LqQo_Iz6JBFwfvoGn2NOx8dDVsGqTbAfoaW6R93cWOBWxDN9Cv4NttiiAgS2C7TSBEpJVvIg60Skjbtey7ayD6ZCkhAg2xGyCR0PdNGoq-a2kaqmnttzULPWJ5AHeDj39-aEsKzmEIV-Sigibg9Hgn5O1h8Tp_YquXx-X8bsW8sDoyW0GpFVZOospyJVTphJO8NFBilro84-isdYWuqlIqp4xzZmNAOpfLjSqyCbk5eD0irvvBf8KwXx__nP0CidVyog</recordid><startdate>201112</startdate><enddate>201112</enddate><creator>Gang Zhang</creator><creator>Tian-Zi Shen</creator><creator>Hua-Min Li</creator><creator>Dae-Yeong Lee</creator><creator>Chang-Ho Ra</creator><creator>Won Jong Yoo</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201112</creationdate><title>Electrically switchable graphene photo-sensor using phase-change gate filter for non-volatile data storage application with high-speed data writing and access</title><author>Gang Zhang ; Tian-Zi Shen ; Hua-Min Li ; Dae-Yeong Lee ; Chang-Ho Ra ; Won Jong Yoo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-7fad54efc2e438414dc1c20d6ade3fad830ec77c95ffd24c46cc6b6a2cc82b493</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Indium tin oxide</topic><topic>Logic gates</topic><topic>Memory</topic><topic>Optical filters</topic><topic>Optical switches</topic><toplevel>online_resources</toplevel><creatorcontrib>Gang Zhang</creatorcontrib><creatorcontrib>Tian-Zi Shen</creatorcontrib><creatorcontrib>Hua-Min Li</creatorcontrib><creatorcontrib>Dae-Yeong Lee</creatorcontrib><creatorcontrib>Chang-Ho Ra</creatorcontrib><creatorcontrib>Won Jong Yoo</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Gang Zhang</au><au>Tian-Zi Shen</au><au>Hua-Min Li</au><au>Dae-Yeong Lee</au><au>Chang-Ho Ra</au><au>Won Jong Yoo</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Electrically switchable graphene photo-sensor using phase-change gate filter for non-volatile data storage application with high-speed data writing and access</atitle><btitle>2011 International Electron Devices Meeting</btitle><stitle>IEDM</stitle><date>2011-12</date><risdate>2011</risdate><spage>2.5.1</spage><epage>2.5.4</epage><pages>2.5.1-2.5.4</pages><issn>0163-1918</issn><eissn>2156-017X</eissn><isbn>1457705060</isbn><isbn>9781457705069</isbn><eisbn>9781457705052</eisbn><eisbn>1457705044</eisbn><eisbn>9781457705045</eisbn><eisbn>1457705052</eisbn><abstract>An electrically switchable graphene photo-sensor (SGPS) is proposed for multiple functional applications. SGPS is a dual-gate thin-film transistor with a graphene channel and a phase-change chalcogenide (GeSbTe) gate filter. This gate filter is switchable between the amorphous (optically transparent) and crystalline (optically non-transparent) phases by applying the gate biases. When the gate filter is switched to the amorphous/crystalline (a/c) phases, the SGPS will/not yield photo-current (I pc ) under a constant light source. By detecting the presence of I pc , two data states can be read out so as to accomplish non-volatile data storage. SGPS can present a switching speed of ~50 ns between the a/c phases of GeSbTe and a data access speed as fast as 10 ns. SGPS shows very good 10-year data retention at 85°C and good endurance of &gt;;10 6 switching cycles between the a/c phases of the GeSbTe gate filter.</abstract><pub>IEEE</pub><doi>10.1109/IEDM.2011.6131476</doi></addata></record>
fulltext fulltext_linktorsrc
identifier ISSN: 0163-1918
ispartof 2011 International Electron Devices Meeting, 2011, p.2.5.1-2.5.4
issn 0163-1918
2156-017X
language eng
recordid cdi_ieee_primary_6131476
source IEEE Electronic Library (IEL) Conference Proceedings
subjects Indium tin oxide
Logic gates
Memory
Optical filters
Optical switches
title Electrically switchable graphene photo-sensor using phase-change gate filter for non-volatile data storage application with high-speed data writing and access
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T20%3A13%3A26IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Electrically%20switchable%20graphene%20photo-sensor%20using%20phase-change%20gate%20filter%20for%20non-volatile%20data%20storage%20application%20with%20high-speed%20data%20writing%20and%20access&rft.btitle=2011%20International%20Electron%20Devices%20Meeting&rft.au=Gang%20Zhang&rft.date=2011-12&rft.spage=2.5.1&rft.epage=2.5.4&rft.pages=2.5.1-2.5.4&rft.issn=0163-1918&rft.eissn=2156-017X&rft.isbn=1457705060&rft.isbn_list=9781457705069&rft_id=info:doi/10.1109/IEDM.2011.6131476&rft_dat=%3Cieee_6IE%3E6131476%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=9781457705052&rft.eisbn_list=1457705044&rft.eisbn_list=9781457705045&rft.eisbn_list=1457705052&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=6131476&rfr_iscdi=true