Self-consistent electro-thermo-mechanical analysis of AlN passivation effect on AlGaN/GaN HEMTs

In this article, the effect of AlN materials as passivation over AlGaN layer on AlGaN/GaN HEMTs performance was investigated firstly using electro-thermo-mechanical coupled methodology by both TCAD simulation and analytic calculation. It suggested that AlN passivation layer over AlGaN layer effectiv...

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Bibliographische Detailangaben

Hauptverfasser:	Prabowo, B. A., Anumeha, Prakash, A., Kumar, R., Sheu, G., Jung-Ruey Tsai, Shao-Ming Yang
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	AlGaN/GaN AlN passivation Aluminum gallium nitride electro-thermo-mechanical Gallium nitride HEMT HEMTs Lattices MODFETs Passivation reliability Stress
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