Thin Film Solar Cells Fabricated Using Cross-Shaped Pattern Epilayer Lift-Off Technology for Substrate Recycling Applications
This study reports the use of cross-shaped pattern epitaxial lift-off (ELO) technology to release crack-free single crystal epilayers with a solar cell structure from a gallium arsenide (GaAs) substrate. A cross-shaped pattern array was used to define cell size and provide the etch path for the etch...
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| Veröffentlicht in: | IEEE transactions on electron devices 2012-03, Vol.59 (3), p.666-672 |
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| container_title | IEEE transactions on electron devices |
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| creator | HORNG, Ray-Hua TSENG, Ming-Chun WU, Fan-Lei LI, Chia-Hao WU, Chih-Hung YANG, Min-De |
| description | This study reports the use of cross-shaped pattern epitaxial lift-off (ELO) technology to release crack-free single crystal epilayers with a solar cell structure from a gallium arsenide (GaAs) substrate. A cross-shaped pattern array was used to define cell size and provide the etch path for the etchant solution. AlAs was used as a sacrificial layer and etched using a hydrofluoric acid etchant through the cross-shaped hole. Results indicate that the entire wafer can be etched simultaneously. The desired carrier, i.e., the electroplate nickel substrate, can directly contact the epilayer without wax or low-viscosity epoxy, and can also be applied to an external force through magnetic attraction to decrease the release time. After the cross-shaped pattern ELO process, the separated GaAs substrate can be recycled through chemical cleaning. The performance of solar cells grown on new and recycled GaAs substrates remained above 90% of the initial performance when the substrate was recycled less than three times. |
| doi_str_mv | 10.1109/TED.2011.2177986 |
| format | Article |
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A cross-shaped pattern array was used to define cell size and provide the etch path for the etchant solution. AlAs was used as a sacrificial layer and etched using a hydrofluoric acid etchant through the cross-shaped hole. Results indicate that the entire wafer can be etched simultaneously. The desired carrier, i.e., the electroplate nickel substrate, can directly contact the epilayer without wax or low-viscosity epoxy, and can also be applied to an external force through magnetic attraction to decrease the release time. After the cross-shaped pattern ELO process, the separated GaAs substrate can be recycled through chemical cleaning. The performance of solar cells grown on new and recycled GaAs substrates remained above 90% of the initial performance when the substrate was recycled less than three times.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2011.2177986</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Chemicals ; Electronics ; Energy ; Epitaxial lift-off (ELO) ; Etching ; Exact sciences and technology ; Gallium arsenide ; Natural energy ; Nickel ; Optoelectronic devices ; Photovoltaic cells ; Photovoltaic conversion ; recycled substrate ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Solar cells. Photoelectrochemical cells ; Solar energy ; Substrates ; thin film solar cell</subject><ispartof>IEEE transactions on electron devices, 2012-03, Vol.59 (3), p.666-672</ispartof><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c359t-427b1a38c93c83de1fbd0c87a5672938382de1289ffcc4c9115df9c646855193</citedby><cites>FETCH-LOGICAL-c359t-427b1a38c93c83de1fbd0c87a5672938382de1289ffcc4c9115df9c646855193</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6127910$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6127910$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=25594708$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>HORNG, Ray-Hua</creatorcontrib><creatorcontrib>TSENG, Ming-Chun</creatorcontrib><creatorcontrib>WU, Fan-Lei</creatorcontrib><creatorcontrib>LI, Chia-Hao</creatorcontrib><creatorcontrib>WU, Chih-Hung</creatorcontrib><creatorcontrib>YANG, Min-De</creatorcontrib><title>Thin Film Solar Cells Fabricated Using Cross-Shaped Pattern Epilayer Lift-Off Technology for Substrate Recycling Applications</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>This study reports the use of cross-shaped pattern epitaxial lift-off (ELO) technology to release crack-free single crystal epilayers with a solar cell structure from a gallium arsenide (GaAs) substrate. A cross-shaped pattern array was used to define cell size and provide the etch path for the etchant solution. AlAs was used as a sacrificial layer and etched using a hydrofluoric acid etchant through the cross-shaped hole. Results indicate that the entire wafer can be etched simultaneously. The desired carrier, i.e., the electroplate nickel substrate, can directly contact the epilayer without wax or low-viscosity epoxy, and can also be applied to an external force through magnetic attraction to decrease the release time. After the cross-shaped pattern ELO process, the separated GaAs substrate can be recycled through chemical cleaning. The performance of solar cells grown on new and recycled GaAs substrates remained above 90% of the initial performance when the substrate was recycled less than three times.</description><subject>Applied sciences</subject><subject>Chemicals</subject><subject>Electronics</subject><subject>Energy</subject><subject>Epitaxial lift-off (ELO)</subject><subject>Etching</subject><subject>Exact sciences and technology</subject><subject>Gallium arsenide</subject><subject>Natural energy</subject><subject>Nickel</subject><subject>Optoelectronic devices</subject><subject>Photovoltaic cells</subject><subject>Photovoltaic conversion</subject><subject>recycled substrate</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Solar cells. Photoelectrochemical cells</subject><subject>Solar energy</subject><subject>Substrates</subject><subject>thin film solar cell</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kL1PwzAQxS0EEqWwI7F4YUzxRxzbYxVaQKpURMMcOY7dGrlJZIchA_87iVp1Ot3dez_pPQAeMVpgjORLsXpdEITxgmDOpciuwAwzxhOZpdk1mCGERSKpoLfgLsafcc3SlMzAX3FwDVw7f4S71qsAc-N9hGtVBadVb2r4HV2zh3loY0x2B9WNp0_V9yY0cNU5rwYT4MbZPtlaCwujD03r2_0AbRvg7reKfRgx8MvoQfuJtOw6P6Fd28R7cGOVj-bhPOegWK-K_D3ZbN8-8uUm0ZTJPkkJr7CiQkuqBa0NtlWNtOCKZZxMoQQZj0RIa7VOtcSY1VbqMblgDEs6B-iE1VOKYGzZBXdUYSgxKqf2yrG9cmqvPLc3Wp5Plk5FrbwNqtEuXnyEMZlyJEbd00nnjDGXd4YJlxjRfzC7eWk</recordid><startdate>20120301</startdate><enddate>20120301</enddate><creator>HORNG, Ray-Hua</creator><creator>TSENG, Ming-Chun</creator><creator>WU, Fan-Lei</creator><creator>LI, Chia-Hao</creator><creator>WU, Chih-Hung</creator><creator>YANG, Min-De</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20120301</creationdate><title>Thin Film Solar Cells Fabricated Using Cross-Shaped Pattern Epilayer Lift-Off Technology for Substrate Recycling Applications</title><author>HORNG, Ray-Hua ; TSENG, Ming-Chun ; WU, Fan-Lei ; LI, Chia-Hao ; WU, Chih-Hung ; YANG, Min-De</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c359t-427b1a38c93c83de1fbd0c87a5672938382de1289ffcc4c9115df9c646855193</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Applied sciences</topic><topic>Chemicals</topic><topic>Electronics</topic><topic>Energy</topic><topic>Epitaxial lift-off (ELO)</topic><topic>Etching</topic><topic>Exact sciences and technology</topic><topic>Gallium arsenide</topic><topic>Natural energy</topic><topic>Nickel</topic><topic>Optoelectronic devices</topic><topic>Photovoltaic cells</topic><topic>Photovoltaic conversion</topic><topic>recycled substrate</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Solar cells. Photoelectrochemical cells</topic><topic>Solar energy</topic><topic>Substrates</topic><topic>thin film solar cell</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>HORNG, Ray-Hua</creatorcontrib><creatorcontrib>TSENG, Ming-Chun</creatorcontrib><creatorcontrib>WU, Fan-Lei</creatorcontrib><creatorcontrib>LI, Chia-Hao</creatorcontrib><creatorcontrib>WU, Chih-Hung</creatorcontrib><creatorcontrib>YANG, Min-De</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HORNG, Ray-Hua</au><au>TSENG, Ming-Chun</au><au>WU, Fan-Lei</au><au>LI, Chia-Hao</au><au>WU, Chih-Hung</au><au>YANG, Min-De</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thin Film Solar Cells Fabricated Using Cross-Shaped Pattern Epilayer Lift-Off Technology for Substrate Recycling Applications</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2012-03-01</date><risdate>2012</risdate><volume>59</volume><issue>3</issue><spage>666</spage><epage>672</epage><pages>666-672</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>This study reports the use of cross-shaped pattern epitaxial lift-off (ELO) technology to release crack-free single crystal epilayers with a solar cell structure from a gallium arsenide (GaAs) substrate. A cross-shaped pattern array was used to define cell size and provide the etch path for the etchant solution. AlAs was used as a sacrificial layer and etched using a hydrofluoric acid etchant through the cross-shaped hole. Results indicate that the entire wafer can be etched simultaneously. The desired carrier, i.e., the electroplate nickel substrate, can directly contact the epilayer without wax or low-viscosity epoxy, and can also be applied to an external force through magnetic attraction to decrease the release time. After the cross-shaped pattern ELO process, the separated GaAs substrate can be recycled through chemical cleaning. The performance of solar cells grown on new and recycled GaAs substrates remained above 90% of the initial performance when the substrate was recycled less than three times.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2011.2177986</doi><tpages>7</tpages></addata></record> |
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| issn | 0018-9383 1557-9646 |
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| subjects | Applied sciences Chemicals Electronics Energy Epitaxial lift-off (ELO) Etching Exact sciences and technology Gallium arsenide Natural energy Nickel Optoelectronic devices Photovoltaic cells Photovoltaic conversion recycled substrate Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solar cells. Photoelectrochemical cells Solar energy Substrates thin film solar cell |
| title | Thin Film Solar Cells Fabricated Using Cross-Shaped Pattern Epilayer Lift-Off Technology for Substrate Recycling Applications |
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