MEMS resonators with extremely low vibration and shock sensitivity
MEMS resonator-based oscillators have demonstrated extreme low susceptibility to acceleration. Specifically, oscillators were built employing 100nm-gap electro-statically transduced polysilicon MEMS resonators. An oscillator based upon the Lamé-mode of a square-shaped resonator anchored at four cor...
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creator | Bongsang Kim Olsson, R. H. Smart, K. Wojciechowski, K. E. |
description | MEMS resonator-based oscillators have demonstrated extreme low susceptibility to acceleration. Specifically, oscillators were built employing 100nm-gap electro-statically transduced polysilicon MEMS resonators. An oscillator based upon the Lamé-mode of a square-shaped resonator anchored at four corners demonstrated a measured acceleration sensitivity of Γ in-plane = 2.1ppb/g and Γ out-of-plane =3.8ppb/g. An oscillator referencing the same design resonator with an additional anchor at the center measured even lower acceleration sensitivity by 5×, Γ out-of-plane = 0.74 ppb/g. These measured values are on-par with the current low-G sensitivity quartz-based oscillators. In separately performed drop tests, these oscillators have shown only -7.7 ppm frequency deviation through an 11,000G impact, which corresponds to an acceleration sensitivity of 0.70 ppb/g. Such extremely low sensitivity to vibrations and shocks enables the use MEMS resonators in environments with extremely high accelerations such as in military and aerospace applications. |
doi_str_mv | 10.1109/ICSENS.2011.6127186 |
format | Conference Proceeding |
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H. ; Smart, K. ; Wojciechowski, K. E.</creator><creatorcontrib>Bongsang Kim ; Olsson, R. H. ; Smart, K. ; Wojciechowski, K. E.</creatorcontrib><description>MEMS resonator-based oscillators have demonstrated extreme low susceptibility to acceleration. Specifically, oscillators were built employing 100nm-gap electro-statically transduced polysilicon MEMS resonators. An oscillator based upon the Lamé-mode of a square-shaped resonator anchored at four corners demonstrated a measured acceleration sensitivity of Γ in-plane = 2.1ppb/g and Γ out-of-plane =3.8ppb/g. An oscillator referencing the same design resonator with an additional anchor at the center measured even lower acceleration sensitivity by 5×, Γ out-of-plane = 0.74 ppb/g. These measured values are on-par with the current low-G sensitivity quartz-based oscillators. In separately performed drop tests, these oscillators have shown only -7.7 ppm frequency deviation through an 11,000G impact, which corresponds to an acceleration sensitivity of 0.70 ppb/g. Such extremely low sensitivity to vibrations and shocks enables the use MEMS resonators in environments with extremely high accelerations such as in military and aerospace applications.</description><identifier>ISSN: 1930-0395</identifier><identifier>ISBN: 9781424492909</identifier><identifier>ISBN: 1424492904</identifier><identifier>EISSN: 2168-9229</identifier><identifier>EISBN: 9781424492886</identifier><identifier>EISBN: 1424492882</identifier><identifier>EISBN: 9781424492893</identifier><identifier>EISBN: 1424492890</identifier><identifier>DOI: 10.1109/ICSENS.2011.6127186</identifier><language>eng</language><publisher>IEEE</publisher><subject>Acceleration ; Frequency measurement ; Micromechanical devices ; Oscillators ; Resonant frequency ; Sensitivity ; Stress</subject><ispartof>2011 IEEE SENSORS Proceedings, 2011, p.606-609</ispartof><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6127186$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6127186$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Bongsang Kim</creatorcontrib><creatorcontrib>Olsson, R. H.</creatorcontrib><creatorcontrib>Smart, K.</creatorcontrib><creatorcontrib>Wojciechowski, K. E.</creatorcontrib><title>MEMS resonators with extremely low vibration and shock sensitivity</title><title>2011 IEEE SENSORS Proceedings</title><addtitle>ICSENS</addtitle><description>MEMS resonator-based oscillators have demonstrated extreme low susceptibility to acceleration. Specifically, oscillators were built employing 100nm-gap electro-statically transduced polysilicon MEMS resonators. An oscillator based upon the Lamé-mode of a square-shaped resonator anchored at four corners demonstrated a measured acceleration sensitivity of Γ in-plane = 2.1ppb/g and Γ out-of-plane =3.8ppb/g. An oscillator referencing the same design resonator with an additional anchor at the center measured even lower acceleration sensitivity by 5×, Γ out-of-plane = 0.74 ppb/g. These measured values are on-par with the current low-G sensitivity quartz-based oscillators. In separately performed drop tests, these oscillators have shown only -7.7 ppm frequency deviation through an 11,000G impact, which corresponds to an acceleration sensitivity of 0.70 ppb/g. Such extremely low sensitivity to vibrations and shocks enables the use MEMS resonators in environments with extremely high accelerations such as in military and aerospace applications.</description><subject>Acceleration</subject><subject>Frequency measurement</subject><subject>Micromechanical devices</subject><subject>Oscillators</subject><subject>Resonant frequency</subject><subject>Sensitivity</subject><subject>Stress</subject><issn>1930-0395</issn><issn>2168-9229</issn><isbn>9781424492909</isbn><isbn>1424492904</isbn><isbn>9781424492886</isbn><isbn>1424492882</isbn><isbn>9781424492893</isbn><isbn>1424492890</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2011</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpNkLtOwzAUQM1LIpR-QRf_QMq9Tpz4jlC1UKmFoTBXTnyrGtIExVZL_p6BDkxnONIZjhAThCki0MNytpm_bqYKEKcFqhJNcSHGVBrMVZ6TMqa4FInCwqSkFF39dwR0LRKkDFLISN-KuxA-ARRoZRLxtJ6vN7Ln0LU2dn2QJx_3kn9izwduBtl0J3n0VW-j71ppWyfDvqu_ZOA2-OiPPg734mZnm8DjM0fiYzF_n72kq7fn5exxlXqlIKZkWbm8pgwdOGcd69xhxWCgRjbZzllyuS0JKijIljttnalKXVVgjUPQ2UhM_rqembffvT_Yftied2S_HNxREA</recordid><startdate>20110101</startdate><enddate>20110101</enddate><creator>Bongsang Kim</creator><creator>Olsson, R. H.</creator><creator>Smart, K.</creator><creator>Wojciechowski, K. E.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>20110101</creationdate><title>MEMS resonators with extremely low vibration and shock sensitivity</title><author>Bongsang Kim ; Olsson, R. H. ; Smart, K. ; Wojciechowski, K. E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i220t-9ae2d4c931d0ddade54d1be080c1e83fda9d4a790b069a7f5ad8b75bb0a8d1053</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Acceleration</topic><topic>Frequency measurement</topic><topic>Micromechanical devices</topic><topic>Oscillators</topic><topic>Resonant frequency</topic><topic>Sensitivity</topic><topic>Stress</topic><toplevel>online_resources</toplevel><creatorcontrib>Bongsang Kim</creatorcontrib><creatorcontrib>Olsson, R. H.</creatorcontrib><creatorcontrib>Smart, K.</creatorcontrib><creatorcontrib>Wojciechowski, K. E.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEL</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Bongsang Kim</au><au>Olsson, R. H.</au><au>Smart, K.</au><au>Wojciechowski, K. E.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>MEMS resonators with extremely low vibration and shock sensitivity</atitle><btitle>2011 IEEE SENSORS Proceedings</btitle><stitle>ICSENS</stitle><date>2011-01-01</date><risdate>2011</risdate><spage>606</spage><epage>609</epage><pages>606-609</pages><issn>1930-0395</issn><eissn>2168-9229</eissn><isbn>9781424492909</isbn><isbn>1424492904</isbn><eisbn>9781424492886</eisbn><eisbn>1424492882</eisbn><eisbn>9781424492893</eisbn><eisbn>1424492890</eisbn><abstract>MEMS resonator-based oscillators have demonstrated extreme low susceptibility to acceleration. Specifically, oscillators were built employing 100nm-gap electro-statically transduced polysilicon MEMS resonators. An oscillator based upon the Lamé-mode of a square-shaped resonator anchored at four corners demonstrated a measured acceleration sensitivity of Γ in-plane = 2.1ppb/g and Γ out-of-plane =3.8ppb/g. An oscillator referencing the same design resonator with an additional anchor at the center measured even lower acceleration sensitivity by 5×, Γ out-of-plane = 0.74 ppb/g. These measured values are on-par with the current low-G sensitivity quartz-based oscillators. In separately performed drop tests, these oscillators have shown only -7.7 ppm frequency deviation through an 11,000G impact, which corresponds to an acceleration sensitivity of 0.70 ppb/g. Such extremely low sensitivity to vibrations and shocks enables the use MEMS resonators in environments with extremely high accelerations such as in military and aerospace applications.</abstract><pub>IEEE</pub><doi>10.1109/ICSENS.2011.6127186</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record> |
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source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Acceleration Frequency measurement Micromechanical devices Oscillators Resonant frequency Sensitivity Stress |
title | MEMS resonators with extremely low vibration and shock sensitivity |
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