Polarization selective interband transitions in type-II InAs/GaSb superlattices

Polarization dependent photocurrent has been measured and analyzed in type-II InAs/GaSb strained layer superlattices (SLS). Theoretical studies have also been carried out to understand the origin of polarization selective transitions in SLS system.

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Hauptverfasser: Gautam, N., Barve, A. V., Myers, S., Klein, B., Plis, E., Naydenkov, M., Kutty, M. N., Schuler-Sandy, T., Krishna, S.
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creator Gautam, N.
Barve, A. V.
Myers, S.
Klein, B.
Plis, E.
Naydenkov, M.
Kutty, M. N.
Schuler-Sandy, T.
Krishna, S.
description Polarization dependent photocurrent has been measured and analyzed in type-II InAs/GaSb strained layer superlattices (SLS). Theoretical studies have also been carried out to understand the origin of polarization selective transitions in SLS system.
doi_str_mv 10.1109/PHO.2011.6110411
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subjects Detectors
Molecular beam epitaxial growth
Photoconductivity
Physics
Semiconductor device measurement
Superlattices
Wavelength measurement
title Polarization selective interband transitions in type-II InAs/GaSb superlattices
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