Polarization selective interband transitions in type-II InAs/GaSb superlattices

Polarization selective interband transitions in type-II InAs/GaSb superlattices

Polarization dependent photocurrent has been measured and analyzed in type-II InAs/GaSb strained layer superlattices (SLS). Theoretical studies have also been carried out to understand the origin of polarization selective transitions in SLS system.

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Bibliographische Detailangaben
Hauptverfasser: Gautam, N., Barve, A. V., Myers, S., Klein, B., Plis, E., Naydenkov, M., Kutty, M. N., Schuler-Sandy, T., Krishna, S.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Detectors
Molecular beam epitaxial growth
Photoconductivity
Physics
Semiconductor device measurement
Superlattices
Wavelength measurement
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Beschreibung
Zusammenfassung:Polarization dependent photocurrent has been measured and analyzed in type-II InAs/GaSb strained layer superlattices (SLS). Theoretical studies have also been carried out to understand the origin of polarization selective transitions in SLS system.
ISSN:1092-8081
2766-1733
DOI:10.1109/PHO.2011.6110411