Detecting stability faults in sub-threshold SRAMs
Detecting stability faults has been a crucial task and a hot research topic for the testing of conventional super-threshold 6T SRAM in the past. When lowering the supply voltage of SRAM to the subthreshold region, the impact of stability faults may significantly change, and hence the test methods de...
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| creator | Chen-Wei Lin Hao-Yu Yang Chin-Yuan Huang Hung-Hsin Chen Chao, M. C.-T |
| description | Detecting stability faults has been a crucial task and a hot research topic for the testing of conventional super-threshold 6T SRAM in the past. When lowering the supply voltage of SRAM to the subthreshold region, the impact of stability faults may significantly change, and hence the test methods developed in the past for detecting stability faults may no longer be effective. In this paper, we first categorize the subthreshold-SRAM designs into different types according to their bit-cell structures. Based on each type, we then analyze the difference of its stability faults compared to the conventional super-threshold 6T SRAM, and discuss how the stability-fault test methods should be modified accordingly. A series of experiments are conducted to validate the effectiveness of each stability-fault test method for different types of subthreshold-SRAM designs. |
| doi_str_mv | 10.1109/ICCAD.2011.6105301 |
| format | Conference Proceeding |
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A series of experiments are conducted to validate the effectiveness of each stability-fault test method for different types of subthreshold-SRAM designs.</description><subject>Circuit stability</subject><subject>Inverters</subject><subject>MOSFETs</subject><subject>Random access memory</subject><subject>Resistance</subject><subject>Stability analysis</subject><issn>1092-3152</issn><issn>1558-2434</issn><isbn>1457713993</isbn><isbn>9781457713996</isbn><isbn>9781457714009</isbn><isbn>1457714000</isbn><isbn>9781457713989</isbn><isbn>1457713985</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2011</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj8tOwzAURM1LopT8AGzyAw6-175JvIzSApWKkKD7ynFsahQKit1F_55I7WxmcaTRGcYeQBQAQj-t2rZZFCgAihIESQEXLNNVDYqqCpQQ-pLNgKjmqKS6YncnILWW1xMQGrkEwluWxfgtppRlrSs9Y7BwydkU9l95TKYLQ0jH3JvDkGIe9nk8dDztRhd3v0Off340b_Ge3XgzRJede842z8tN-8rX7y-rtlnzoEXiQCX23tQOBXpCQiAr9OSjyPreWJCdsU52lQKF0iJ511dKGcJSa5rM5-zxNBucc9u_MfyY8bg9n5f_ghZHlw</recordid><startdate>201111</startdate><enddate>201111</enddate><creator>Chen-Wei Lin</creator><creator>Hao-Yu Yang</creator><creator>Chin-Yuan Huang</creator><creator>Hung-Hsin Chen</creator><creator>Chao, M. 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In this paper, we first categorize the subthreshold-SRAM designs into different types according to their bit-cell structures. Based on each type, we then analyze the difference of its stability faults compared to the conventional super-threshold 6T SRAM, and discuss how the stability-fault test methods should be modified accordingly. A series of experiments are conducted to validate the effectiveness of each stability-fault test method for different types of subthreshold-SRAM designs.</abstract><pub>IEEE</pub><doi>10.1109/ICCAD.2011.6105301</doi><tpages>6</tpages></addata></record> |
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| identifier | ISSN: 1092-3152 |
| ispartof | 2011 IEEE/ACM International Conference on Computer-Aided Design (ICCAD), 2011, p.28-33 |
| issn | 1092-3152 1558-2434 |
| language | eng |
| recordid | cdi_ieee_primary_6105301 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Circuit stability Inverters MOSFETs Random access memory Resistance Stability analysis |
| title | Detecting stability faults in sub-threshold SRAMs |
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