Fabrication and modelling of a prototype dual-band HgCdTe infrared detector structure

A monolithic HgCdTe photoconductive device structure is presented that is suitable for dual-band optically registered infrared photodetection in the two atmospheric transmission windows of 3-5 /spl mu/m and 8-12 /spl mu/m, which correspond to the mid-wave and long-wave infrared bands; MWIR and LWIR,...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Parish, G., Musca, C.A., Siliquini, J.F., Antoszewski, J., Dell, J.M., Nener, B.D., Faraone, L., Gouws, G.J.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Atmospheric modeling Crosstalk Dual band Fabrication Infrared detectors Optical imaging Photoconducting devices Photonic band gap Prototypes Substrates
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