2.7- \mu Single-Frequency Low-Threshold Sb-Based Diode-Pumped External-Cavity VCSEL
We present the design, technology, and performances of a tunable Sb-based diode-pumped type-I quantum-well (QW) vertical-external-cavity surface-emitting lasers emitting at 2.7 μm. The half vertical-cavity surface-emitting laser (VCSEL) structure was grown by molecular beam epitaxy with quantum-well...
Gespeichert in:
| Veröffentlicht in: | IEEE photonics technology letters 2012-02, Vol.24 (4), p.246-248 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 248 |
|---|---|
| container_issue | 4 |
| container_start_page | 246 |
| container_title | IEEE photonics technology letters |
| container_volume | 24 |
| creator | Laurain, Alexandre Cerutti, L. Myara, M. Garnache, A. |
| description | We present the design, technology, and performances of a tunable Sb-based diode-pumped type-I quantum-well (QW) vertical-external-cavity surface-emitting lasers emitting at 2.7 μm. The half vertical-cavity surface-emitting laser (VCSEL) structure was grown by molecular beam epitaxy with quantum-well growth temperature of 440 ° C. The sample was thermally annealed to optimize the QW gain design. We report on room-temperature continuous-wave laser with 0.17-mW output power and low threshold incident pump intensity of 0.7 kW/cm 2 while pumping at 830 nm with a commercial diode laser. The external cavity provides a circular TEM 00 beam with a low divergence of 3.6 ° . The short mm-long optical cavity laser exhibits tunable single frequency operation, with a sidemode suppression ratio >;>; 23dB, a linewidth |
| doi_str_mv | 10.1109/LPT.2011.2177252 |
| format | Article |
| fullrecord | <record><control><sourceid>hal_RIE</sourceid><recordid>TN_cdi_ieee_primary_6096363</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6096363</ieee_id><sourcerecordid>oai_HAL_hal_01620392v1</sourcerecordid><originalsourceid>FETCH-LOGICAL-c1423-fbf2e83f71c4f14426fc665385936ad1f63487108e13bea70ad5cb87916672073</originalsourceid><addsrcrecordid>eNo9kDFPwzAQRi0EEqWwI7FkZXDw2Y6djCW0FCkSlVKYkCwnOdOgtAGnLfTfk6pVp_vu9L4bHiG3wEIAljxks3nIGUDIQWse8TMygEQCZaDleZ9ZnwFEdEmuuu6LMZCRkAOS81DT4GO5CfJ69dkgnXj82eCq3AVZ-0vnC4_dom2qIC_oo-2wCp7qtkI62yy_-2X8t0a_sg1N7bZe74L3NB9n1-TC2abDm-MckrfJeJ5Oafb6_JKOMlqC5IK6wnGMhdNQSgdScuVKpSIRR4lQtgKnhIw1sBhBFGg1s1VUFrFOQCnNmRZDcn_4u7CN-fb10vqdaW1tpqPM7G8MFGci4VvoWXZgS992nUd3KgAze4GmF2j2As1RYF-5O1RqRDzhiiVKKCH-AUUxaJ4</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>2.7- \mu Single-Frequency Low-Threshold Sb-Based Diode-Pumped External-Cavity VCSEL</title><source>IEEE Electronic Library (IEL)</source><creator>Laurain, Alexandre ; Cerutti, L. ; Myara, M. ; Garnache, A.</creator><creatorcontrib>Laurain, Alexandre ; Cerutti, L. ; Myara, M. ; Garnache, A.</creatorcontrib><description>We present the design, technology, and performances of a tunable Sb-based diode-pumped type-I quantum-well (QW) vertical-external-cavity surface-emitting lasers emitting at 2.7 μm. The half vertical-cavity surface-emitting laser (VCSEL) structure was grown by molecular beam epitaxy with quantum-well growth temperature of 440 ° C. The sample was thermally annealed to optimize the QW gain design. We report on room-temperature continuous-wave laser with 0.17-mW output power and low threshold incident pump intensity of 0.7 kW/cm 2 while pumping at 830 nm with a commercial diode laser. The external cavity provides a circular TEM 00 beam with a low divergence of 3.6 ° . The short mm-long optical cavity laser exhibits tunable single frequency operation, with a sidemode suppression ratio >;>; 23dB, a linewidth <;<;4;GHz, and a linear light polarization. Thermal and optical properties are studied.</description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/LPT.2011.2177252</identifier><identifier>CODEN: IPTLEL</identifier><language>eng</language><publisher>IEEE</publisher><subject>Cavity resonators ; Electronics ; Engineering Sciences ; Gas lasers ; Infrared spectroscopy ; Laser beams ; Laser excitation ; quantum-well lasers ; single-frequency ; Vertical cavity surface emitting lasers ; vertical-external-cavity surface-emitting laser (VECSEL)</subject><ispartof>IEEE photonics technology letters, 2012-02, Vol.24 (4), p.246-248</ispartof><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1423-fbf2e83f71c4f14426fc665385936ad1f63487108e13bea70ad5cb87916672073</citedby><cites>FETCH-LOGICAL-c1423-fbf2e83f71c4f14426fc665385936ad1f63487108e13bea70ad5cb87916672073</cites><orcidid>0000-0001-6549-2243 ; 0000-0002-1758-7130</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6096363$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>230,315,781,785,797,886,27928,27929,54762</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6096363$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttps://hal.science/hal-01620392$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Laurain, Alexandre</creatorcontrib><creatorcontrib>Cerutti, L.</creatorcontrib><creatorcontrib>Myara, M.</creatorcontrib><creatorcontrib>Garnache, A.</creatorcontrib><title>2.7- \mu Single-Frequency Low-Threshold Sb-Based Diode-Pumped External-Cavity VCSEL</title><title>IEEE photonics technology letters</title><addtitle>LPT</addtitle><description>We present the design, technology, and performances of a tunable Sb-based diode-pumped type-I quantum-well (QW) vertical-external-cavity surface-emitting lasers emitting at 2.7 μm. The half vertical-cavity surface-emitting laser (VCSEL) structure was grown by molecular beam epitaxy with quantum-well growth temperature of 440 ° C. The sample was thermally annealed to optimize the QW gain design. We report on room-temperature continuous-wave laser with 0.17-mW output power and low threshold incident pump intensity of 0.7 kW/cm 2 while pumping at 830 nm with a commercial diode laser. The external cavity provides a circular TEM 00 beam with a low divergence of 3.6 ° . The short mm-long optical cavity laser exhibits tunable single frequency operation, with a sidemode suppression ratio >;>; 23dB, a linewidth <;<;4;GHz, and a linear light polarization. Thermal and optical properties are studied.</description><subject>Cavity resonators</subject><subject>Electronics</subject><subject>Engineering Sciences</subject><subject>Gas lasers</subject><subject>Infrared spectroscopy</subject><subject>Laser beams</subject><subject>Laser excitation</subject><subject>quantum-well lasers</subject><subject>single-frequency</subject><subject>Vertical cavity surface emitting lasers</subject><subject>vertical-external-cavity surface-emitting laser (VECSEL)</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kDFPwzAQRi0EEqWwI7FkZXDw2Y6djCW0FCkSlVKYkCwnOdOgtAGnLfTfk6pVp_vu9L4bHiG3wEIAljxks3nIGUDIQWse8TMygEQCZaDleZ9ZnwFEdEmuuu6LMZCRkAOS81DT4GO5CfJ69dkgnXj82eCq3AVZ-0vnC4_dom2qIC_oo-2wCp7qtkI62yy_-2X8t0a_sg1N7bZe74L3NB9n1-TC2abDm-MckrfJeJ5Oafb6_JKOMlqC5IK6wnGMhdNQSgdScuVKpSIRR4lQtgKnhIw1sBhBFGg1s1VUFrFOQCnNmRZDcn_4u7CN-fb10vqdaW1tpqPM7G8MFGci4VvoWXZgS992nUd3KgAze4GmF2j2As1RYF-5O1RqRDzhiiVKKCH-AUUxaJ4</recordid><startdate>201202</startdate><enddate>201202</enddate><creator>Laurain, Alexandre</creator><creator>Cerutti, L.</creator><creator>Myara, M.</creator><creator>Garnache, A.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0001-6549-2243</orcidid><orcidid>https://orcid.org/0000-0002-1758-7130</orcidid></search><sort><creationdate>201202</creationdate><title>2.7- \mu Single-Frequency Low-Threshold Sb-Based Diode-Pumped External-Cavity VCSEL</title><author>Laurain, Alexandre ; Cerutti, L. ; Myara, M. ; Garnache, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1423-fbf2e83f71c4f14426fc665385936ad1f63487108e13bea70ad5cb87916672073</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Cavity resonators</topic><topic>Electronics</topic><topic>Engineering Sciences</topic><topic>Gas lasers</topic><topic>Infrared spectroscopy</topic><topic>Laser beams</topic><topic>Laser excitation</topic><topic>quantum-well lasers</topic><topic>single-frequency</topic><topic>Vertical cavity surface emitting lasers</topic><topic>vertical-external-cavity surface-emitting laser (VECSEL)</topic><toplevel>online_resources</toplevel><creatorcontrib>Laurain, Alexandre</creatorcontrib><creatorcontrib>Cerutti, L.</creatorcontrib><creatorcontrib>Myara, M.</creatorcontrib><creatorcontrib>Garnache, A.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>IEEE photonics technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Laurain, Alexandre</au><au>Cerutti, L.</au><au>Myara, M.</au><au>Garnache, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>2.7- \mu Single-Frequency Low-Threshold Sb-Based Diode-Pumped External-Cavity VCSEL</atitle><jtitle>IEEE photonics technology letters</jtitle><stitle>LPT</stitle><date>2012-02</date><risdate>2012</risdate><volume>24</volume><issue>4</issue><spage>246</spage><epage>248</epage><pages>246-248</pages><issn>1041-1135</issn><eissn>1941-0174</eissn><coden>IPTLEL</coden><abstract>We present the design, technology, and performances of a tunable Sb-based diode-pumped type-I quantum-well (QW) vertical-external-cavity surface-emitting lasers emitting at 2.7 μm. The half vertical-cavity surface-emitting laser (VCSEL) structure was grown by molecular beam epitaxy with quantum-well growth temperature of 440 ° C. The sample was thermally annealed to optimize the QW gain design. We report on room-temperature continuous-wave laser with 0.17-mW output power and low threshold incident pump intensity of 0.7 kW/cm 2 while pumping at 830 nm with a commercial diode laser. The external cavity provides a circular TEM 00 beam with a low divergence of 3.6 ° . The short mm-long optical cavity laser exhibits tunable single frequency operation, with a sidemode suppression ratio >;>; 23dB, a linewidth <;<;4;GHz, and a linear light polarization. Thermal and optical properties are studied.</abstract><pub>IEEE</pub><doi>10.1109/LPT.2011.2177252</doi><tpages>3</tpages><orcidid>https://orcid.org/0000-0001-6549-2243</orcidid><orcidid>https://orcid.org/0000-0002-1758-7130</orcidid></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1041-1135 |
| ispartof | IEEE photonics technology letters, 2012-02, Vol.24 (4), p.246-248 |
| issn | 1041-1135 1941-0174 |
| language | eng |
| recordid | cdi_ieee_primary_6096363 |
| source | IEEE Electronic Library (IEL) |
| subjects | Cavity resonators Electronics Engineering Sciences Gas lasers Infrared spectroscopy Laser beams Laser excitation quantum-well lasers single-frequency Vertical cavity surface emitting lasers vertical-external-cavity surface-emitting laser (VECSEL) |
| title | 2.7- \mu Single-Frequency Low-Threshold Sb-Based Diode-Pumped External-Cavity VCSEL |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-17T01%3A36%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-hal_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=2.7-%20%5Cmu%20Single-Frequency%20Low-Threshold%20Sb-Based%20Diode-Pumped%20External-Cavity%20VCSEL&rft.jtitle=IEEE%20photonics%20technology%20letters&rft.au=Laurain,%20Alexandre&rft.date=2012-02&rft.volume=24&rft.issue=4&rft.spage=246&rft.epage=248&rft.pages=246-248&rft.issn=1041-1135&rft.eissn=1941-0174&rft.coden=IPTLEL&rft_id=info:doi/10.1109/LPT.2011.2177252&rft_dat=%3Chal_RIE%3Eoai_HAL_hal_01620392v1%3C/hal_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=6096363&rfr_iscdi=true |