2.7- \mu Single-Frequency Low-Threshold Sb-Based Diode-Pumped External-Cavity VCSEL

2.7- \mu Single-Frequency Low-Threshold Sb-Based Diode-Pumped External-Cavity VCSEL

We present the design, technology, and performances of a tunable Sb-based diode-pumped type-I quantum-well (QW) vertical-external-cavity surface-emitting lasers emitting at 2.7 μm. The half vertical-cavity surface-emitting laser (VCSEL) structure was grown by molecular beam epitaxy with quantum-well...

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Veröffentlicht in:IEEE photonics technology letters 2012-02, Vol.24 (4), p.246-248
Hauptverfasser: Laurain, Alexandre, Cerutti, L., Myara, M., Garnache, A.
Format: Artikel
Sprache:eng
Schlagworte:
Cavity resonators
Electronics
Engineering Sciences
Gas lasers
Infrared spectroscopy
Laser beams
Laser excitation
quantum-well lasers
single-frequency
Vertical cavity surface emitting lasers
vertical-external-cavity surface-emitting laser (VECSEL)
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Zusammenfassung:We present the design, technology, and performances of a tunable Sb-based diode-pumped type-I quantum-well (QW) vertical-external-cavity surface-emitting lasers emitting at 2.7 μm. The half vertical-cavity surface-emitting laser (VCSEL) structure was grown by molecular beam epitaxy with quantum-well growth temperature of 440 ° C. The sample was thermally annealed to optimize the QW gain design. We report on room-temperature continuous-wave laser with 0.17-mW output power and low threshold incident pump intensity of 0.7 kW/cm 2 while pumping at 830 nm with a commercial diode laser. The external cavity provides a circular TEM 00 beam with a low divergence of 3.6 ° . The short mm-long optical cavity laser exhibits tunable single frequency operation, with a sidemode suppression ratio >;>; 23dB, a linewidth
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2011.2177252