Structural characterization of AlN and AlGaN layers grown on GaN/AlN/Si 111 by plasma-assisted MBE
Aluminum nitride (AlN) and high aluminum (Al) content aluminum gallium nitride (AlGaN) thin films were successfully grown on gallium nitride (GaN) layer by plasma-assisted molecular beam epitaxy (PA-MBE) system. The films were deposited on Si 111 substrate. A systematic study and optimization of the...
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| creator | Yusoff, M. Z. M. Hassan, Z. Mahyuddin, A. Chin Che Woei Ahmad, A. Yusof, Y. Yunus, M. B. M. |
| description | Aluminum nitride (AlN) and high aluminum (Al) content aluminum gallium nitride (AlGaN) thin films were successfully grown on gallium nitride (GaN) layer by plasma-assisted molecular beam epitaxy (PA-MBE) system. The films were deposited on Si 111 substrate. A systematic study and optimization of the growth conditions was performed in order to grow AlN and AlGaN layers on GaN films. Epitaxial growth of GaN has been demonstrated to be feasible for substrate temperature (800°C and 850°C) which depends on a Ga/nitrogen flux ratio. The absence of cubic phase GaN buffer layer for both samples has shown that this layer possessed hexagonal structure. The AlN sample has a good optical quality as measured by the photoluminescence (PL) system. |
| doi_str_mv | 10.1109/ISBEIA.2011.6088879 |
| format | Conference Proceeding |
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Z. M. ; Hassan, Z. ; Mahyuddin, A. ; Chin Che Woei ; Ahmad, A. ; Yusof, Y. ; Yunus, M. B. M.</creator><creatorcontrib>Yusoff, M. Z. M. ; Hassan, Z. ; Mahyuddin, A. ; Chin Che Woei ; Ahmad, A. ; Yusof, Y. ; Yunus, M. B. M.</creatorcontrib><description>Aluminum nitride (AlN) and high aluminum (Al) content aluminum gallium nitride (AlGaN) thin films were successfully grown on gallium nitride (GaN) layer by plasma-assisted molecular beam epitaxy (PA-MBE) system. The films were deposited on Si 111 substrate. A systematic study and optimization of the growth conditions was performed in order to grow AlN and AlGaN layers on GaN films. Epitaxial growth of GaN has been demonstrated to be feasible for substrate temperature (800°C and 850°C) which depends on a Ga/nitrogen flux ratio. The absence of cubic phase GaN buffer layer for both samples has shown that this layer possessed hexagonal structure. The AlN sample has a good optical quality as measured by the photoluminescence (PL) system.</description><identifier>ISBN: 9781457715488</identifier><identifier>ISBN: 1457715481</identifier><identifier>EISBN: 9781457715495</identifier><identifier>EISBN: 1457715473</identifier><identifier>EISBN: 9781457715471</identifier><identifier>EISBN: 145771549X</identifier><identifier>DOI: 10.1109/ISBEIA.2011.6088879</identifier><language>eng</language><publisher>IEEE</publisher><subject>AlGaN ; AlN ; Aluminum gallium nitride ; Gallium nitride ; III-Nitrides ; MBE ; Molecular beam epitaxial growth ; Optical films ; Silicon ; Substrates</subject><ispartof>2011 IEEE Symposium on Business, Engineering and Industrial Applications (ISBEIA), 2011, p.554-557</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6088879$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6088879$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Yusoff, M. Z. M.</creatorcontrib><creatorcontrib>Hassan, Z.</creatorcontrib><creatorcontrib>Mahyuddin, A.</creatorcontrib><creatorcontrib>Chin Che Woei</creatorcontrib><creatorcontrib>Ahmad, A.</creatorcontrib><creatorcontrib>Yusof, Y.</creatorcontrib><creatorcontrib>Yunus, M. B. M.</creatorcontrib><title>Structural characterization of AlN and AlGaN layers grown on GaN/AlN/Si 111 by plasma-assisted MBE</title><title>2011 IEEE Symposium on Business, Engineering and Industrial Applications (ISBEIA)</title><addtitle>ISBEIA</addtitle><description>Aluminum nitride (AlN) and high aluminum (Al) content aluminum gallium nitride (AlGaN) thin films were successfully grown on gallium nitride (GaN) layer by plasma-assisted molecular beam epitaxy (PA-MBE) system. The films were deposited on Si 111 substrate. A systematic study and optimization of the growth conditions was performed in order to grow AlN and AlGaN layers on GaN films. Epitaxial growth of GaN has been demonstrated to be feasible for substrate temperature (800°C and 850°C) which depends on a Ga/nitrogen flux ratio. The absence of cubic phase GaN buffer layer for both samples has shown that this layer possessed hexagonal structure. The AlN sample has a good optical quality as measured by the photoluminescence (PL) system.</description><subject>AlGaN</subject><subject>AlN</subject><subject>Aluminum gallium nitride</subject><subject>Gallium nitride</subject><subject>III-Nitrides</subject><subject>MBE</subject><subject>Molecular beam epitaxial growth</subject><subject>Optical films</subject><subject>Silicon</subject><subject>Substrates</subject><isbn>9781457715488</isbn><isbn>1457715481</isbn><isbn>9781457715495</isbn><isbn>1457715473</isbn><isbn>9781457715471</isbn><isbn>145771549X</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2011</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVUEtOwzAUNEJIoNITdOMLJPFL4s9btlUolUpZpPvKjh0wSpvKToXC6YlEN8xmNB_NYghZAEsBGGbbelVtl2nOAFLBlFIS78gcpYKSSwm8RH7_Tyv1SOYxfrEJQijF-RMx9RCuzXANuqPNpw66GVzwP3rw_Zn2LV12e6rPduKN3tNOjy5E-hH67yk908nLpkZWewoA1Iz00ul40omO0cfBWfq2qp7JQ6u76OY3npHDS3VYvya79812vdwlHtmQtKKULG_y3KAEBER0VoGQwBRYg7YxRhhZIHc5OiyUEKJsneFO2JIzKIoZWfzNeufc8RL8SYfxeDum-AXUqlTv</recordid><startdate>201109</startdate><enddate>201109</enddate><creator>Yusoff, M. Z. M.</creator><creator>Hassan, Z.</creator><creator>Mahyuddin, A.</creator><creator>Chin Che Woei</creator><creator>Ahmad, A.</creator><creator>Yusof, Y.</creator><creator>Yunus, M. B. M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201109</creationdate><title>Structural characterization of AlN and AlGaN layers grown on GaN/AlN/Si 111 by plasma-assisted MBE</title><author>Yusoff, M. Z. M. ; Hassan, Z. ; Mahyuddin, A. ; Chin Che Woei ; Ahmad, A. ; Yusof, Y. ; Yunus, M. B. M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-f64702c22b97191999ed81671081db9dcbb6b7395e29e9386664feb5e6d450133</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2011</creationdate><topic>AlGaN</topic><topic>AlN</topic><topic>Aluminum gallium nitride</topic><topic>Gallium nitride</topic><topic>III-Nitrides</topic><topic>MBE</topic><topic>Molecular beam epitaxial growth</topic><topic>Optical films</topic><topic>Silicon</topic><topic>Substrates</topic><toplevel>online_resources</toplevel><creatorcontrib>Yusoff, M. Z. M.</creatorcontrib><creatorcontrib>Hassan, Z.</creatorcontrib><creatorcontrib>Mahyuddin, A.</creatorcontrib><creatorcontrib>Chin Che Woei</creatorcontrib><creatorcontrib>Ahmad, A.</creatorcontrib><creatorcontrib>Yusof, Y.</creatorcontrib><creatorcontrib>Yunus, M. B. M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yusoff, M. Z. M.</au><au>Hassan, Z.</au><au>Mahyuddin, A.</au><au>Chin Che Woei</au><au>Ahmad, A.</au><au>Yusof, Y.</au><au>Yunus, M. B. M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Structural characterization of AlN and AlGaN layers grown on GaN/AlN/Si 111 by plasma-assisted MBE</atitle><btitle>2011 IEEE Symposium on Business, Engineering and Industrial Applications (ISBEIA)</btitle><stitle>ISBEIA</stitle><date>2011-09</date><risdate>2011</risdate><spage>554</spage><epage>557</epage><pages>554-557</pages><isbn>9781457715488</isbn><isbn>1457715481</isbn><eisbn>9781457715495</eisbn><eisbn>1457715473</eisbn><eisbn>9781457715471</eisbn><eisbn>145771549X</eisbn><abstract>Aluminum nitride (AlN) and high aluminum (Al) content aluminum gallium nitride (AlGaN) thin films were successfully grown on gallium nitride (GaN) layer by plasma-assisted molecular beam epitaxy (PA-MBE) system. The films were deposited on Si 111 substrate. A systematic study and optimization of the growth conditions was performed in order to grow AlN and AlGaN layers on GaN films. Epitaxial growth of GaN has been demonstrated to be feasible for substrate temperature (800°C and 850°C) which depends on a Ga/nitrogen flux ratio. The absence of cubic phase GaN buffer layer for both samples has shown that this layer possessed hexagonal structure. The AlN sample has a good optical quality as measured by the photoluminescence (PL) system.</abstract><pub>IEEE</pub><doi>10.1109/ISBEIA.2011.6088879</doi><tpages>4</tpages></addata></record> |
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| identifier | ISBN: 9781457715488 |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | AlGaN AlN Aluminum gallium nitride Gallium nitride III-Nitrides MBE Molecular beam epitaxial growth Optical films Silicon Substrates |
| title | Structural characterization of AlN and AlGaN layers grown on GaN/AlN/Si 111 by plasma-assisted MBE |
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