Use of modified operating mode of gallium arsenid Gunn diodes in the 35-47 GHz millimetre-range generators

Impedance and operating temperature of Gunn diodes (GD) used in the modified mode (MM) are the same as in the transit-time mode. The MM may be realized in GD with the thin base layer (L120mW, I oper =0.5-0.55A and U oper =4.5-5V; GDG with F out =37GHz with P out >140mW, I oper

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Bibliographische Detailangaben
Hauptverfasser: Torkhov, N. A., Bozhkov, V. G., Perfilev, V. A., Zolotov, S. E., Petrov, I. V., Burmistrova, V. A., Kozlova, A. V.
Format: Tagungsbericht
Sprache:eng
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