Use of modified operating mode of gallium arsenid Gunn diodes in the 35-47 GHz millimetre-range generators
Impedance and operating temperature of Gunn diodes (GD) used in the modified mode (MM) are the same as in the transit-time mode. The MM may be realized in GD with the thin base layer (L120mW, I oper =0.5-0.55A and U oper =4.5-5V; GDG with F out =37GHz with P out >140mW, I oper
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| creator | Torkhov, N. A. Bozhkov, V. G. Perfilev, V. A. Zolotov, S. E. Petrov, I. V. Burmistrova, V. A. Kozlova, A. V. |
| description | Impedance and operating temperature of Gunn diodes (GD) used in the modified mode (MM) are the same as in the transit-time mode. The MM may be realized in GD with the thin base layer (L120mW, I oper =0.5-0.55A and U oper =4.5-5V; GDG with F out =37GHz with P out >140mW, I oper |
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Extended frequency range and high efficiency of GD working in MM have allowed using GD efficiently in the following types of GD generators (GDG): GDG with output frequency F out =35GHz (with tuning range 1GHz) with output power P out >120mW, I oper =0.5-0.55A and U oper =4.5-5V; GDG with F out =37GHz with P out >140mW, I oper <0.7A and U oper <6V; and GDG with F out =47GHz with P out >100mW, I oper =0.5-0.55А and U oper =4.5-5V.</description><identifier>ISBN: 9781457708831</identifier><identifier>ISBN: 1457708833</identifier><identifier>EISBN: 9789663353579</identifier><identifier>EISBN: 9663353570</identifier><identifier>EISBN: 9789663353562</identifier><identifier>EISBN: 9663353562</identifier><language>eng</language><publisher>IEEE</publisher><subject>Electronic mail ; Gallium arsenide ; Generators ; Power generation ; Semiconductor diodes ; Temperature measurement ; Tuning</subject><ispartof>2011 21st International Crimean Conference "Microwave & Telecommunication Technology", 2011, p.171-172</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6068886$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>310,311,782,786,791,792,2060,54927</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6068886$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Torkhov, N. 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Extended frequency range and high efficiency of GD working in MM have allowed using GD efficiently in the following types of GD generators (GDG): GDG with output frequency F out =35GHz (with tuning range 1GHz) with output power P out >120mW, I oper =0.5-0.55A and U oper =4.5-5V; GDG with F out =37GHz with P out >140mW, I oper <0.7A and U oper <6V; and GDG with F out =47GHz with P out >100mW, I oper =0.5-0.55А and U oper =4.5-5V.</description><subject>Electronic mail</subject><subject>Gallium arsenide</subject><subject>Generators</subject><subject>Power generation</subject><subject>Semiconductor diodes</subject><subject>Temperature measurement</subject><subject>Tuning</subject><isbn>9781457708831</isbn><isbn>1457708833</isbn><isbn>9789663353579</isbn><isbn>9663353570</isbn><isbn>9789663353562</isbn><isbn>9663353562</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2011</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9jE0OgjAUhGuMiUY5gZt3ARJIoT9ro3AAXZsmPPARWkgLCz29QFw7m8nMN5kNi7RUWgjOc55LvV1zmuVSJkrxdM-iENpklhBaZ-LA2kdA6GuwfUU1YQX9gN6M5JqlWlFjuo4mC8YHdFRBMTkHFc00ADkYXwg8jzMJRfkBS_PY4ugx9sY1CA265bD34cR2tekCRj8_svPter-UMSHic_BkjX8_RSKUUoL_p18FXkVE</recordid><startdate>201109</startdate><enddate>201109</enddate><creator>Torkhov, N. A.</creator><creator>Bozhkov, V. G.</creator><creator>Perfilev, V. A.</creator><creator>Zolotov, S. E.</creator><creator>Petrov, I. V.</creator><creator>Burmistrova, V. A.</creator><creator>Kozlova, A. V.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201109</creationdate><title>Use of modified operating mode of gallium arsenid Gunn diodes in the 35-47 GHz millimetre-range generators</title><author>Torkhov, N. A. ; Bozhkov, V. G. ; Perfilev, V. A. ; Zolotov, S. E. ; Petrov, I. V. ; Burmistrova, V. A. ; Kozlova, A. 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V.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Torkhov, N. A.</au><au>Bozhkov, V. G.</au><au>Perfilev, V. A.</au><au>Zolotov, S. E.</au><au>Petrov, I. V.</au><au>Burmistrova, V. A.</au><au>Kozlova, A. V.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Use of modified operating mode of gallium arsenid Gunn diodes in the 35-47 GHz millimetre-range generators</atitle><btitle>2011 21st International Crimean Conference "Microwave & Telecommunication Technology"</btitle><stitle>CRMICO</stitle><date>2011-09</date><risdate>2011</risdate><spage>171</spage><epage>172</epage><pages>171-172</pages><isbn>9781457708831</isbn><isbn>1457708833</isbn><eisbn>9789663353579</eisbn><eisbn>9663353570</eisbn><eisbn>9789663353562</eisbn><eisbn>9663353562</eisbn><abstract>Impedance and operating temperature of Gunn diodes (GD) used in the modified mode (MM) are the same as in the transit-time mode. The MM may be realized in GD with the thin base layer (L<1.5μm), where the value of strong field domain equates, or exceeds, the base length. Extended frequency range and high efficiency of GD working in MM have allowed using GD efficiently in the following types of GD generators (GDG): GDG with output frequency F out =35GHz (with tuning range 1GHz) with output power P out >120mW, I oper =0.5-0.55A and U oper =4.5-5V; GDG with F out =37GHz with P out >140mW, I oper <0.7A and U oper <6V; and GDG with F out =47GHz with P out >100mW, I oper =0.5-0.55А and U oper =4.5-5V.</abstract><pub>IEEE</pub></addata></record> |
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| subjects | Electronic mail Gallium arsenide Generators Power generation Semiconductor diodes Temperature measurement Tuning |
| title | Use of modified operating mode of gallium arsenid Gunn diodes in the 35-47 GHz millimetre-range generators |
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