Quantitative measurement of electric properties on the nanometer scale using atomic force microscopy
We describe a method to measure capacitances and dopant densities with a nanometer scale spatial resolution. It is implemented using an atomic force microscope with a conductive tip interfaced with a microwave vector network analyzer. A microwave signal is sent to the tip and the ratio of reflected...
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| creator | Fenner, M. A. Kienberger, F. Tanbakuchi, H. Huber, H.-P Hinterdorfer, P. |
| description | We describe a method to measure capacitances and dopant densities with a nanometer scale spatial resolution. It is implemented using an atomic force microscope with a conductive tip interfaced with a microwave vector network analyzer. A microwave signal is sent to the tip and the ratio of reflected and incident wave is measured. The technique - also referred to as scanning microwave microscopy (SMM) - can be calibrated to yield quantitative measurements of the capacitance at the tip sample junction. On semiconductor surfaces SMM can be used to measure dopant density distribution quantitatively. |
| doi_str_mv | 10.1109/SCD.2011.6068750 |
| format | Conference Proceeding |
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A. ; Kienberger, F. ; Tanbakuchi, H. ; Huber, H.-P ; Hinterdorfer, P.</creator><creatorcontrib>Fenner, M. A. ; Kienberger, F. ; Tanbakuchi, H. ; Huber, H.-P ; Hinterdorfer, P.</creatorcontrib><description>We describe a method to measure capacitances and dopant densities with a nanometer scale spatial resolution. It is implemented using an atomic force microscope with a conductive tip interfaced with a microwave vector network analyzer. A microwave signal is sent to the tip and the ratio of reflected and incident wave is measured. The technique - also referred to as scanning microwave microscopy (SMM) - can be calibrated to yield quantitative measurements of the capacitance at the tip sample junction. 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On semiconductor surfaces SMM can be used to measure dopant density distribution quantitatively.</description><subject>Atomic Force Microscope</subject><subject>Atomic force microscopy</subject><subject>Calibration</subject><subject>Capacitance</subject><subject>Dopant Density</subject><subject>Impedance</subject><subject>Microwave measurements</subject><subject>Scanning Microwave Microscopy</subject><subject>Semiconductor device measurement</subject><isbn>1457704315</isbn><isbn>9781457704314</isbn><isbn>9781457704307</isbn><isbn>9781457704291</isbn><isbn>1457704307</isbn><isbn>1457704293</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2011</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1kE1LxDAURSMiqGP3gpv8gakv03w0S6k6CgMizn54pq8aaZuSpML8e0ccV5cLlwPnMnYtoBQC7O1bc1-uQIhSg66NghNWWFMLqYwBWYE5ZZf_RahzVqT0BQDCaqNX-oK1rzOO2WfM_pv4QJjmSAONmYeOU08uR-_4FMNEMXtKPIw8fxIfcQwDZYo8OeyJz8mPHxxzGA7zLkR3gHkXQ3Jh2l-xsw77RMUxF2z7-LBtnpabl_Vzc7dZegt5iWi0dsqgrKQFZZUG0OCQqHN1ZVqrCN8tuEo5rDtSRraVJKm7Xxs6-C3YzR_WE9Fuin7AuN8df6l-ADwxWEI</recordid><startdate>201109</startdate><enddate>201109</enddate><creator>Fenner, M. 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A.</creatorcontrib><creatorcontrib>Kienberger, F.</creatorcontrib><creatorcontrib>Tanbakuchi, H.</creatorcontrib><creatorcontrib>Huber, H.-P</creatorcontrib><creatorcontrib>Hinterdorfer, P.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Fenner, M. A.</au><au>Kienberger, F.</au><au>Tanbakuchi, H.</au><au>Huber, H.-P</au><au>Hinterdorfer, P.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Quantitative measurement of electric properties on the nanometer scale using atomic force microscopy</atitle><btitle>2011 Semiconductor Conference Dresden</btitle><stitle>SCD</stitle><date>2011-09</date><risdate>2011</risdate><spage>1</spage><epage>4</epage><pages>1-4</pages><isbn>1457704315</isbn><isbn>9781457704314</isbn><eisbn>9781457704307</eisbn><eisbn>9781457704291</eisbn><eisbn>1457704307</eisbn><eisbn>1457704293</eisbn><abstract>We describe a method to measure capacitances and dopant densities with a nanometer scale spatial resolution. It is implemented using an atomic force microscope with a conductive tip interfaced with a microwave vector network analyzer. A microwave signal is sent to the tip and the ratio of reflected and incident wave is measured. The technique - also referred to as scanning microwave microscopy (SMM) - can be calibrated to yield quantitative measurements of the capacitance at the tip sample junction. On semiconductor surfaces SMM can be used to measure dopant density distribution quantitatively.</abstract><pub>IEEE</pub><doi>10.1109/SCD.2011.6068750</doi><tpages>4</tpages></addata></record> |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Atomic Force Microscope Atomic force microscopy Calibration Capacitance Dopant Density Impedance Microwave measurements Scanning Microwave Microscopy Semiconductor device measurement |
| title | Quantitative measurement of electric properties on the nanometer scale using atomic force microscopy |
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