Balancing Circuit for a 5-kV/50-ns Pulsed-Power Switch Based on SiC-JFET Super Cascode

In many pulsed-power applications, there is a trend to modulators based on semiconductor technology. For these modulators, high-voltage and high-current semiconductor switches are required in order to achieve a high pulsed power. Therefore, often, high-power IGBT modules or IGCT devices are used. Si...

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Veröffentlicht in:	IEEE transactions on plasma science 2012-10, Vol.40 (10), p.2554-2560
Hauptverfasser:	Biela, J., Aggeler, D., Bortis, D., Kolar, J. W.
Format:	Artikel
Sprache:	eng
Schlagworte:	Capacitors Electric power Electrical equipment Electrodes Integrated circuits JFETs Logic gates medium voltage switch MOSFET circuits Plasma physics pulsed power systems Resistors Semiconductors Switches Transient analysis
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