Analysis of a kind of diode over-current oscillation mechanism

Under certain conditions, semiconductor diodes will produce the phenomenon of current periodic change in DC circuit. We designed a experiment due to some certain silicon epitaxial planar diode, and the test results showed that when the current flowing the diode overruns rated value, current regular...

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Hauptverfasser: Chengda Yu, Qibin Deng, Wei Han, Ping Li, Deren Feng
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Qibin Deng
Wei Han
Ping Li
Deren Feng
description Under certain conditions, semiconductor diodes will produce the phenomenon of current periodic change in DC circuit. We designed a experiment due to some certain silicon epitaxial planar diode, and the test results showed that when the current flowing the diode overruns rated value, current regular relaxation oscillation appears, and the oscillation period is in several seconds. As long as the voltage remains the same, this kind of relaxation oscillation can last a few minutes, even longer. This phenomenon is different from Gunn oscillation, because oscillation frequency of the latter is much more than that of the former. Studying this kind of phenomenon has potential application prospect in the area developing new-type oscillators, helps to look into working performance of semiconductor diode, and further overcomes the deficiency of manufacturing process.
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subjects Cathodes
Drift
Electric potential
Mathematical model
Metals
Oscillators
Particle aggregation
Relaxation oscillation
Semiconductor diodes
Switches
Transit Time
Virtual Cathode
Voltage-controlled Switch
title Analysis of a kind of diode over-current oscillation mechanism
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