Analysis of a kind of diode over-current oscillation mechanism
Under certain conditions, semiconductor diodes will produce the phenomenon of current periodic change in DC circuit. We designed a experiment due to some certain silicon epitaxial planar diode, and the test results showed that when the current flowing the diode overruns rated value, current regular...
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creator | Chengda Yu Qibin Deng Wei Han Ping Li Deren Feng |
description | Under certain conditions, semiconductor diodes will produce the phenomenon of current periodic change in DC circuit. We designed a experiment due to some certain silicon epitaxial planar diode, and the test results showed that when the current flowing the diode overruns rated value, current regular relaxation oscillation appears, and the oscillation period is in several seconds. As long as the voltage remains the same, this kind of relaxation oscillation can last a few minutes, even longer. This phenomenon is different from Gunn oscillation, because oscillation frequency of the latter is much more than that of the former. Studying this kind of phenomenon has potential application prospect in the area developing new-type oscillators, helps to look into working performance of semiconductor diode, and further overcomes the deficiency of manufacturing process. |
doi_str_mv | 10.1109/ICECENG.2011.6057483 |
format | Conference Proceeding |
fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_6057483</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6057483</ieee_id><sourcerecordid>6057483</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-2df5317e187c84bc26db9cd096556c53234e00c2b91919afac3dd741f54b00e3</originalsourceid><addsrcrecordid>eNo1j8tOwzAURI0QElDyBbDwDyTc61fsDVIVhVKpoouyrxzbEYY8UByQ-vcUtcws5sxmpCHkAaFABPO4ruqqfl0VDBALBbIUml-QWxRMCI1K8EuSmVL_dwbXJEvpA45SyqDmN-RpOdjukGKiY0st_YyD_yMfRx_o-BOm3H1PUxhmOiYXu87OcRxoH9y7HWLq78hVa7sUsnMuyO65fqte8s12ta6WmzwamHPmW8mxDKhLp0XjmPKNcR6MklI5yRkXAcCxxuDRtrWOe18KbKVoAAJfkPvTagwh7L-m2NvpsD8f5r8hi0mk</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Analysis of a kind of diode over-current oscillation mechanism</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Chengda Yu ; Qibin Deng ; Wei Han ; Ping Li ; Deren Feng</creator><creatorcontrib>Chengda Yu ; Qibin Deng ; Wei Han ; Ping Li ; Deren Feng</creatorcontrib><description>Under certain conditions, semiconductor diodes will produce the phenomenon of current periodic change in DC circuit. We designed a experiment due to some certain silicon epitaxial planar diode, and the test results showed that when the current flowing the diode overruns rated value, current regular relaxation oscillation appears, and the oscillation period is in several seconds. As long as the voltage remains the same, this kind of relaxation oscillation can last a few minutes, even longer. This phenomenon is different from Gunn oscillation, because oscillation frequency of the latter is much more than that of the former. Studying this kind of phenomenon has potential application prospect in the area developing new-type oscillators, helps to look into working performance of semiconductor diode, and further overcomes the deficiency of manufacturing process.</description><identifier>ISBN: 9781424481620</identifier><identifier>ISBN: 1424481627</identifier><identifier>EISBN: 1424481643</identifier><identifier>EISBN: 9781424481644</identifier><identifier>EISBN: 1424481651</identifier><identifier>EISBN: 9781424481651</identifier><identifier>DOI: 10.1109/ICECENG.2011.6057483</identifier><language>eng</language><publisher>IEEE</publisher><subject>Cathodes ; Drift ; Electric potential ; Mathematical model ; Metals ; Oscillators ; Particle aggregation ; Relaxation oscillation ; Semiconductor diodes ; Switches ; Transit Time ; Virtual Cathode ; Voltage-controlled Switch</subject><ispartof>2011 International Conference on Electrical and Control Engineering, 2011, p.2889-2893</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6057483$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6057483$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Chengda Yu</creatorcontrib><creatorcontrib>Qibin Deng</creatorcontrib><creatorcontrib>Wei Han</creatorcontrib><creatorcontrib>Ping Li</creatorcontrib><creatorcontrib>Deren Feng</creatorcontrib><title>Analysis of a kind of diode over-current oscillation mechanism</title><title>2011 International Conference on Electrical and Control Engineering</title><addtitle>ICECENG</addtitle><description>Under certain conditions, semiconductor diodes will produce the phenomenon of current periodic change in DC circuit. We designed a experiment due to some certain silicon epitaxial planar diode, and the test results showed that when the current flowing the diode overruns rated value, current regular relaxation oscillation appears, and the oscillation period is in several seconds. As long as the voltage remains the same, this kind of relaxation oscillation can last a few minutes, even longer. This phenomenon is different from Gunn oscillation, because oscillation frequency of the latter is much more than that of the former. Studying this kind of phenomenon has potential application prospect in the area developing new-type oscillators, helps to look into working performance of semiconductor diode, and further overcomes the deficiency of manufacturing process.</description><subject>Cathodes</subject><subject>Drift</subject><subject>Electric potential</subject><subject>Mathematical model</subject><subject>Metals</subject><subject>Oscillators</subject><subject>Particle aggregation</subject><subject>Relaxation oscillation</subject><subject>Semiconductor diodes</subject><subject>Switches</subject><subject>Transit Time</subject><subject>Virtual Cathode</subject><subject>Voltage-controlled Switch</subject><isbn>9781424481620</isbn><isbn>1424481627</isbn><isbn>1424481643</isbn><isbn>9781424481644</isbn><isbn>1424481651</isbn><isbn>9781424481651</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2011</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1j8tOwzAURI0QElDyBbDwDyTc61fsDVIVhVKpoouyrxzbEYY8UByQ-vcUtcws5sxmpCHkAaFABPO4ruqqfl0VDBALBbIUml-QWxRMCI1K8EuSmVL_dwbXJEvpA45SyqDmN-RpOdjukGKiY0st_YyD_yMfRx_o-BOm3H1PUxhmOiYXu87OcRxoH9y7HWLq78hVa7sUsnMuyO65fqte8s12ta6WmzwamHPmW8mxDKhLp0XjmPKNcR6MklI5yRkXAcCxxuDRtrWOe18KbKVoAAJfkPvTagwh7L-m2NvpsD8f5r8hi0mk</recordid><startdate>201109</startdate><enddate>201109</enddate><creator>Chengda Yu</creator><creator>Qibin Deng</creator><creator>Wei Han</creator><creator>Ping Li</creator><creator>Deren Feng</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201109</creationdate><title>Analysis of a kind of diode over-current oscillation mechanism</title><author>Chengda Yu ; Qibin Deng ; Wei Han ; Ping Li ; Deren Feng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-2df5317e187c84bc26db9cd096556c53234e00c2b91919afac3dd741f54b00e3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Cathodes</topic><topic>Drift</topic><topic>Electric potential</topic><topic>Mathematical model</topic><topic>Metals</topic><topic>Oscillators</topic><topic>Particle aggregation</topic><topic>Relaxation oscillation</topic><topic>Semiconductor diodes</topic><topic>Switches</topic><topic>Transit Time</topic><topic>Virtual Cathode</topic><topic>Voltage-controlled Switch</topic><toplevel>online_resources</toplevel><creatorcontrib>Chengda Yu</creatorcontrib><creatorcontrib>Qibin Deng</creatorcontrib><creatorcontrib>Wei Han</creatorcontrib><creatorcontrib>Ping Li</creatorcontrib><creatorcontrib>Deren Feng</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chengda Yu</au><au>Qibin Deng</au><au>Wei Han</au><au>Ping Li</au><au>Deren Feng</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Analysis of a kind of diode over-current oscillation mechanism</atitle><btitle>2011 International Conference on Electrical and Control Engineering</btitle><stitle>ICECENG</stitle><date>2011-09</date><risdate>2011</risdate><spage>2889</spage><epage>2893</epage><pages>2889-2893</pages><isbn>9781424481620</isbn><isbn>1424481627</isbn><eisbn>1424481643</eisbn><eisbn>9781424481644</eisbn><eisbn>1424481651</eisbn><eisbn>9781424481651</eisbn><abstract>Under certain conditions, semiconductor diodes will produce the phenomenon of current periodic change in DC circuit. We designed a experiment due to some certain silicon epitaxial planar diode, and the test results showed that when the current flowing the diode overruns rated value, current regular relaxation oscillation appears, and the oscillation period is in several seconds. As long as the voltage remains the same, this kind of relaxation oscillation can last a few minutes, even longer. This phenomenon is different from Gunn oscillation, because oscillation frequency of the latter is much more than that of the former. Studying this kind of phenomenon has potential application prospect in the area developing new-type oscillators, helps to look into working performance of semiconductor diode, and further overcomes the deficiency of manufacturing process.</abstract><pub>IEEE</pub><doi>10.1109/ICECENG.2011.6057483</doi><tpages>5</tpages></addata></record> |
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ispartof | 2011 International Conference on Electrical and Control Engineering, 2011, p.2889-2893 |
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language | eng |
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source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Cathodes Drift Electric potential Mathematical model Metals Oscillators Particle aggregation Relaxation oscillation Semiconductor diodes Switches Transit Time Virtual Cathode Voltage-controlled Switch |
title | Analysis of a kind of diode over-current oscillation mechanism |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T21%3A55%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Analysis%20of%20a%20kind%20of%20diode%20over-current%20oscillation%20mechanism&rft.btitle=2011%20International%20Conference%20on%20Electrical%20and%20Control%20Engineering&rft.au=Chengda%20Yu&rft.date=2011-09&rft.spage=2889&rft.epage=2893&rft.pages=2889-2893&rft.isbn=9781424481620&rft.isbn_list=1424481627&rft_id=info:doi/10.1109/ICECENG.2011.6057483&rft_dat=%3Cieee_6IE%3E6057483%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=1424481643&rft.eisbn_list=9781424481644&rft.eisbn_list=1424481651&rft.eisbn_list=9781424481651&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=6057483&rfr_iscdi=true |