Investigation of electronic properties of crystalline silicon solar cells

Polycrystalline silicon solar cells use standard optimized pattern of top electrode in order of effective collection of electric charges and minimized shading. We present the results of electric measurement on polycrystalline silicon solar cells with non-standard shape of top electrode which is desi...

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Hauptverfasser: Kusko, M., Saly, V.
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description Polycrystalline silicon solar cells use standard optimized pattern of top electrode in order of effective collection of electric charges and minimized shading. We present the results of electric measurement on polycrystalline silicon solar cells with non-standard shape of top electrode which is designed so as to follow the grain boundaries. The aim is to estimate the influence of mentioned topology. The ac measurements were performed in the dark with increased temperature influence (range from 298 to 348 K) and equivalent circuit elements were calculated using the models of complex impedance characteristics.
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fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_6053578</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6053578</ieee_id><sourcerecordid>6053578</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-ccc30f7c8daf4fa749b2d4b4af2d469807601baf109ba3e29af0456b4e086b523</originalsourceid><addsrcrecordid>eNpFUM1KAzEYjKhgW30A8bIvsGu-_O4epdS6UPBQPZck_SKRuLskQejbu2LB0zDMD8wQcg-0AaDdY7_fbxpGARpFJZe6vSBLEFJrNsvi8p8AuyILBgpqJll7Q5Y5f9I5whksSN8P35hL-DAljEM1-gojupLGIbhqSuOEqQTMv4JLp1xMjGHAKocY3OzPYzSpchhjviXX3sSMd2dckffnzdv6pd69bvv1064OoGWpnXOceu3ao_HCGy06y47CCuNnUF1LtaJgjZ8nWsORdcZTIZUVSFtlJeMr8vDXGxDxMKXwZdLpcP6A_wB4Rk-u</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Investigation of electronic properties of crystalline silicon solar cells</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Kusko, M. ; Saly, V.</creator><creatorcontrib>Kusko, M. ; Saly, V.</creatorcontrib><description>Polycrystalline silicon solar cells use standard optimized pattern of top electrode in order of effective collection of electric charges and minimized shading. We present the results of electric measurement on polycrystalline silicon solar cells with non-standard shape of top electrode which is designed so as to follow the grain boundaries. The aim is to estimate the influence of mentioned topology. The ac measurements were performed in the dark with increased temperature influence (range from 298 to 348 K) and equivalent circuit elements were calculated using the models of complex impedance characteristics.</description><identifier>ISSN: 2161-2528</identifier><identifier>ISBN: 1457721112</identifier><identifier>ISBN: 9781457721113</identifier><identifier>EISBN: 1457721104</identifier><identifier>EISBN: 9781457721120</identifier><identifier>EISBN: 1457721120</identifier><identifier>EISBN: 9781457721106</identifier><identifier>DOI: 10.1109/ISSE.2011.6053578</identifier><language>eng</language><publisher>IEEE</publisher><subject>Capacitance ; Grain boundaries ; Impedance ; Photovoltaic cells ; Resistance ; Silicon ; Temperature measurement</subject><ispartof>Proceedings of the 2011 34th International Spring Seminar on Electronics Technology (ISSE), 2011, p.202-205</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6053578$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6053578$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kusko, M.</creatorcontrib><creatorcontrib>Saly, V.</creatorcontrib><title>Investigation of electronic properties of crystalline silicon solar cells</title><title>Proceedings of the 2011 34th International Spring Seminar on Electronics Technology (ISSE)</title><addtitle>ISSE</addtitle><description>Polycrystalline silicon solar cells use standard optimized pattern of top electrode in order of effective collection of electric charges and minimized shading. We present the results of electric measurement on polycrystalline silicon solar cells with non-standard shape of top electrode which is designed so as to follow the grain boundaries. The aim is to estimate the influence of mentioned topology. The ac measurements were performed in the dark with increased temperature influence (range from 298 to 348 K) and equivalent circuit elements were calculated using the models of complex impedance characteristics.</description><subject>Capacitance</subject><subject>Grain boundaries</subject><subject>Impedance</subject><subject>Photovoltaic cells</subject><subject>Resistance</subject><subject>Silicon</subject><subject>Temperature measurement</subject><issn>2161-2528</issn><isbn>1457721112</isbn><isbn>9781457721113</isbn><isbn>1457721104</isbn><isbn>9781457721120</isbn><isbn>1457721120</isbn><isbn>9781457721106</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2011</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpFUM1KAzEYjKhgW30A8bIvsGu-_O4epdS6UPBQPZck_SKRuLskQejbu2LB0zDMD8wQcg-0AaDdY7_fbxpGARpFJZe6vSBLEFJrNsvi8p8AuyILBgpqJll7Q5Y5f9I5whksSN8P35hL-DAljEM1-gojupLGIbhqSuOEqQTMv4JLp1xMjGHAKocY3OzPYzSpchhjviXX3sSMd2dckffnzdv6pd69bvv1064OoGWpnXOceu3ao_HCGy06y47CCuNnUF1LtaJgjZ8nWsORdcZTIZUVSFtlJeMr8vDXGxDxMKXwZdLpcP6A_wB4Rk-u</recordid><startdate>201105</startdate><enddate>201105</enddate><creator>Kusko, M.</creator><creator>Saly, V.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201105</creationdate><title>Investigation of electronic properties of crystalline silicon solar cells</title><author>Kusko, M. ; Saly, V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-ccc30f7c8daf4fa749b2d4b4af2d469807601baf109ba3e29af0456b4e086b523</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Capacitance</topic><topic>Grain boundaries</topic><topic>Impedance</topic><topic>Photovoltaic cells</topic><topic>Resistance</topic><topic>Silicon</topic><topic>Temperature measurement</topic><toplevel>online_resources</toplevel><creatorcontrib>Kusko, M.</creatorcontrib><creatorcontrib>Saly, V.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kusko, M.</au><au>Saly, V.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Investigation of electronic properties of crystalline silicon solar cells</atitle><btitle>Proceedings of the 2011 34th International Spring Seminar on Electronics Technology (ISSE)</btitle><stitle>ISSE</stitle><date>2011-05</date><risdate>2011</risdate><spage>202</spage><epage>205</epage><pages>202-205</pages><issn>2161-2528</issn><isbn>1457721112</isbn><isbn>9781457721113</isbn><eisbn>1457721104</eisbn><eisbn>9781457721120</eisbn><eisbn>1457721120</eisbn><eisbn>9781457721106</eisbn><abstract>Polycrystalline silicon solar cells use standard optimized pattern of top electrode in order of effective collection of electric charges and minimized shading. We present the results of electric measurement on polycrystalline silicon solar cells with non-standard shape of top electrode which is designed so as to follow the grain boundaries. The aim is to estimate the influence of mentioned topology. The ac measurements were performed in the dark with increased temperature influence (range from 298 to 348 K) and equivalent circuit elements were calculated using the models of complex impedance characteristics.</abstract><pub>IEEE</pub><doi>10.1109/ISSE.2011.6053578</doi><tpages>4</tpages></addata></record>
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identifier ISSN: 2161-2528
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Capacitance
Grain boundaries
Impedance
Photovoltaic cells
Resistance
Silicon
Temperature measurement
title Investigation of electronic properties of crystalline silicon solar cells
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T07%3A04%3A03IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Investigation%20of%20electronic%20properties%20of%20crystalline%20silicon%20solar%20cells&rft.btitle=Proceedings%20of%20the%202011%2034th%20International%20Spring%20Seminar%20on%20Electronics%20Technology%20(ISSE)&rft.au=Kusko,%20M.&rft.date=2011-05&rft.spage=202&rft.epage=205&rft.pages=202-205&rft.issn=2161-2528&rft.isbn=1457721112&rft.isbn_list=9781457721113&rft_id=info:doi/10.1109/ISSE.2011.6053578&rft_dat=%3Cieee_6IE%3E6053578%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=1457721104&rft.eisbn_list=9781457721120&rft.eisbn_list=1457721120&rft.eisbn_list=9781457721106&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=6053578&rfr_iscdi=true